Electrical and deep levels characteristics of ZnO/Si heterostructure by MOCVD deposition

作     者：刘磁辉 刘秉策 付竹西 

作者机构：Department of Physics University of Science and Technology of China Department of Electron Science and Technology University of Science and Technology of China 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2008年第17卷第6期

页      面：2292-2296页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：Project supported by the National Natural Science Foundation of China (Grant Nos 50472009  10474091 and 50532070) 

主　　题：MOCVD ZnO/Si heterostructure PL spectra deep-level emission 

摘      要：ZnO films have been prepared on p-type Si substrates by metal-organic chemical vapour deposition （MOCVD） at different total gas flow rates. The current versus voltage and temperature （I - V - T） characteristics, the deep-level transient spectroscopy （DLTS） and the photoluminescence （PL） spectra of the samples were measured. DLTS shows two deep-level centres of E1 （Ec-0.13±0.02eV） and E2 （Ec-0.43±0.05eV） in sample 1202a, which has a ZnO/p-Si heterostructure. A deep level at Ec-0.13±0.01 eV was also obtained from the I -T characteristics. It was considered to be the same as E1 obtained from DLTS measurement. The emission related to this deep level center was detected by PL spectra. In addition, the energy location and the relative trap density of E1 was varied when the total gas flow rate was changed.