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Current collapse suppressed GaN diodes with 38 Watts high RF power rectifier capability

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Science China(Information Sciences) 2024年第2期67卷 335-336页

作者： Kui DANG Zhilin QIU Shudong HUO Peng ZHAN Huining LIU Yachao ZHANG Jing NING Hong ZHOU Jincheng ZHANG key Lab of Ministry of Education for {1. band-gap semiconductor materials and devices School of MicroelectronicsXidian University Guangzhou wide {1.gap semiconductor Innovation Center Guangzhou Institute of TechnologyXidian University

Microwave power transmission(MPT) could realize the point-to-point long-distance transfer of energy without any wires, which makes it attractive for solar-powered satellites,drones, and implantable medical devices, and has aroused enormous attention [1.. Microwave rectifiers could convert RF(radio frequency) energy into DC(direct current) power,

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Dual-Schottky-junctions coupling device based on ultra-longβ-Ga_(2)O_(3)single-crystal nanobelt and its photoelectric properties

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Journal of semiconductors 2024年第5期45卷 90-98页

作者： Haifeng Chen Xiaocong Han Chenlu Wu Zhanhang Liu Shaoqing Wang Xiangtai Liu Qin Lu Yifan Jia Zhan Wang Yunhe Guan Lijun Li Yue Hao key {1. of Advanced semiconductor devices and materials School of Electronic EngineeringXi’an University of Posts andT elecommunicationsXi’an 710121China State key Discipline {1. of wide band gap semiconductor Technology School of MicroelectronicsXidian UniversityXi'an 710071China

High qualityβ-Ga_(2)O_(3)single crystal nanobelts with length of 2−3 mm and width from tens of microns to 1.2μm were synthesized by carbothermal reduction *** on the grown nanobelt with the length of 600μm,the dual-Schottky-junctions coupling device(DSCD)was *** to the electrically floating Ga_(2)O_(3)nanobelt region coupling with the double Schottky-junctions,the current I_(S2)increases firstly and rapidly reaches into saturation as increase the voltage V_(S2).The saturation current is about 1. pA,which is two orders of magnitude lower than that of a single *** the case of solar-blind ultraviolet(UV)light irradiation,the photogenerated electrons further aggravate the coupling physical mechanism in device.I_(S2)increases as the intensity of UV light *** the UV light of 1.20μW/cm^(2),I_(S2)quickly enters the saturation *** V_(S2)=1. V,photo-to-dark current ratio(PDCR)of the device reaches more than 1.4,the external quantum efficiency(EQE)is 1.6×1.^(3)%,and the detectivity(D*)is 7.5×1.^(1.)*** addition,the device has a very short rise and decay times of 25−54 ms under different positive and negative *** shows unique electrical and optical control characteristics,which will open a new way for the application of nanobelt-based devices.

关键词： β-Ga_(2)O_(3)nanobelt carbothermal reduction UV light dual-Schottky coupling device

Accelerated Sequential Deposition Reaction via Crystal Orientation Engineering for Low-Temperature,High-Efficiency Carbon-Electrode CsPbBr_(3) Solar Cells

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Energy & Environmental materials 2024年第1期7卷 168-175页

作者： Zeyang Zhang Weidong Zhu Tianjiao Han Tianran Wang Wenming Chai Jiaduo Zhu He Xi Dazheng Chen Gang Lu Peng Dong Jincheng Zhang Chunfu Zhang Yue Hao State key Discipline {1. of wide band gap semiconductor Technology&Shaanxi Joint key {1. of Graphene School of MicroelectronicsXidian UniversityXi'an 710071China Guangzhou wide {1.gap semiconductor Innovation Center Guangzhou institute of technologyXidian UniversityGuangzhou 510555China Qinghai Huanghe Hydropower Development CO. LTD.Xining810008China

Low-temperature,ambient processing of high-quality CsPbBr_(3)films is demanded for scalable production of efficient,low-cost carbon-electrode perovskite solar cells(PSCs).Herein,we demonstrate a crystal orientation engineering strategy of PbBr_(2)precursor film to accelerate its reaction with CsBr precursor during two-step sequential deposition of CsPbBr_(3)*** a novel strategy is proceeded by adding CsBr species into PbBr_(2)precursor,which can tailor the preferred crystal orientation of PbBr_(2)film from[020]into[031.,with CsBr additive staying in the film as CsPb_(2)Br_(5)*** calculations show that the reaction energy barrier of(031.planes of PbBr_(2)with CsBr is lower about 2.28 eV than that of(O2O)***,CsPbBr_(3)films with full coverage,high purity,high crystallinity,micro-sized grains can be obtained at a low temperature of 1.0℃.Carbon-electrode PSCs with these desired CsPbBr_(3)films yield the record-high efficiency of 1..27%coupled with excellent operation ***,the 1.cm^(2)area one with the superior efficiency of 8.00%as well as the flexible one with the champion efficiency of 8.27%and excellent mechanical bending characteristics are also achieved.

关键词： carbon-electrode perovskite solar cells crystal orientation engineering CsPbBr_(3) low temperature two-step sequential deposition

Performance improvement of β-Ga2O3 SBD-based rectifier with embedded microchannels in ceramic substrate

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Science China(Information Sciences) 2024年第5期67卷 341-342页

作者： Wen HONG Chao ZHANG Fang ZHANG Xuefeng ZHENG Xiaohua MA Yue HAO State key {1. of wide-bandgap semiconductor devices and Integrated Technology School of MicroelectronicsXidian University

With the development of integrated circuits, there is a growing demand for higher power devices [1.. Gallium oxide（Ga2O3） holds promise for high power devices due to its wide bandgap and high breakdown electric field strength [2].However, its low thermal conductivity induces severe selfheating effects, limiting its performance and ***, effective thermal management techniques are urgently needed for Ga2O3devices.

关键词： Gallium compounds

Effect and mechanism of on-chip electrostatic discharge protection circuit under fast rising time electromagnetic pulse

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强激光与粒子束 2024年第10期36卷 44-52页

作者： Mao Xinyi Chai Changchun Li Fuxing Lin Haodong Zhao Tianlong Yang Yintang key {1. of Ministry of Education for wide band-gap semiconductor materials and devices Xidian UniversityXi’an 710071China

The electrostatic discharge(ESD)protection circuit widely exists in the input and output ports of CMOS digital circuits,and fast rising time electromagnetic pulse(FREMP)coupled into the device not only interacts with the CMOS circuit,but also acts on the protection *** paper establishes a model of on-chip CMOS electrostatic discharge protection circuit and selects square pulse as the FREMP *** on multiple physical parameter models,it depicts the distribution of the lattice temperature,current density,and electric field intensity inside the *** the same time,this paper explores the changes of the internal {1. in the circuit under the injection of fast rising time electromagnetic pulse and describes the relationship between the damage amplitude threshold and the pulse *** results show that the ESD protection circuit has potential damage risk,and the injection of FREMP leads to irreversible heat loss inside the *** addition,pulse signals with different attributes will change the damage threshold of the *** results provide an important reference for further evaluation of the influence of electromagnetic environment on the chip,which is helpful to carry out the reliability enhancement research of ESD protection circuit.

关键词： fast rising time electromagnetic pulse damage effect electrostatic discharge protection circuit damage location prediction

Construction of novel P-Si/TiO_(2)/HfO_(2)/MoS_(2)/Pt heterophotocathode for enhanced photoelectrochemical water splitting

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Nano Research 2024年第5期17卷 4428-4436页

作者： Jiaru Li Jiayu Bai Songjie Hu Wenyu Yuan Yuyu Bu Xiaohui Guo key Lab of Synthetic and Natural Functional Molecule Chemistry of Ministry of Education Shaanxi Key Laboratory for Carbon Neutral TechnologyThe College of Chemistry and Materials ScienceNorthwest UniversityXi'an 710069China key Lab of {1. band-gap semiconductor materials and devices School of MicroelectronicsXidian UniversityXi’an 710071China key Lab of Macromolecular Science of Shaanxi Province Key Laboratory of Applied Surface and Colloid ChemistryMinistry of EducationSchool of Chemistry&Chemical EngineeringShaanxi Normal UniversityXi'an 710062China

Photoelectrochemical devices have been developed to enable the conversion of solar ***,their commercial potential is restricted by the limited stability of the {1. *** enhance the stability of photocathode and its solar water splitting performance,a P-Si/TiO_(2)/HfO_(2)/MoS_(2)/Pt composite photocathode is developed in this *** novel TiO_(2)/HfO_(2)/MoS_(2) serial nanostructure provides excellent stability of the photocathode,and optimizes the interface energy barrier to further facilitate the transfer process of photogenerated carriers within the *** best P-Si/TiO_(2)/HfO_(2)/MoS_(2)/Pt photocathode demonstrates an initial potential of 0.5 V(***)and a photocurrent density of-29 mA/cm^(2) at 0 V(***).Through intensity modulated photocurrent spectroscopy and photoluminescence test,it is known that the enhanced water splitting performance is attributed to the optimized carrier transfer *** findings provide a feasible strategy for the stability and photon quantum efficiency enhancement of silicon-based photocathode devices.

关键词： photoelectrochemical water splitting stability surface/interface engineering HfO_(2)layer

Improved RF power performance via electrostatic shielding effect using AlGaN/GaN/graded-AlGaN/GaN double-channel structure

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Science China(Information Sciences) 2024年第4期67卷 341-342页

作者： Chunzhou SHI Ling YANG Meng ZHANG Hao LU Mei WU Bin HOU Xuerui NIU Qian YU Wenliang LIU Wenze GAO Xiaohua MA Yue HAO School of Advanced materials and Nanotechnology Xidian University State key Discipline {1. of wide bandgap semiconductor Technology Xidian University

GaN-based high-electric-mobility transistors(HEMTs) have been investigated thoroughly because of their promising applications in high-frequency,-voltage, and-power applications. However, the theoretical material limit prevents conventional single-heterostructure GaN HEMTs from achieving high performance despite numerous efforts [1.3].

关键词： Drain current

Recent progresses in thermal treatment of β-Ga_(2)O_(3) single crystals and devices

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International Journal of Minerals,Metallurgy and materials 2024年第7期31卷 1659-1677页

作者： Yuchao Yan Zhu Jin Hui Zhang Deren Yang State key {1. of Silicon and Advanced semiconductor materials and School of materials Science and Engineering Zhejiang UniversityHangzhou 310027China Zhejiang Provincial key {1. of Power semiconductor materials and devices ZJU-Hangzhou Global Scientific and Technological Innovation CenterHangzhou 311200China

In recent years,ultra-wide {1.gap β-Ga_(2)O_(3) has emerged as a fascinating semiconductor material due to its great potential in power and photoelectric *** semiconductor industrial,thermal treatment has been widely utilized as a convenient and effective approach for substrate property modulation and device ***,a thorough summary of β-Ga_(2)O_(3) substrates and devices behaviors after high-temperature treatment should be *** this review,we present the recent advances in modulating properties of β-Ga_(2)O_(3) substrates by thermal treatment,which include three major applications:(ⅰ)tuning surface electrical properties,(ⅱ)modifying surface morphology,and(ⅲ)oxidating ***,regulating electrical contacts and handling with radiation damage and ion implantation have also been discussed in device *** each category,universal annealing conditions were speculated to figure out the corresponding problems,and some unsolved questions were proposed *** review could construct a systematic thermal treatment strategy for various purposes and applications of β-Ga_(2)O_(3).

关键词： β-gallium oxide thermal treatment substrates devices

High-Al-composition AlGaN/GaN MISHEMT on Si with fT of 320 GHz

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Science China(Information Sciences) 2024年第6期67卷 459-460页

作者： Hanghai DU Lu HAO Zhihong LIU Zeyu SONG Yachao ZHANG Kui DANG Jin ZHOU Jing NING Zan LI Jincheng ZHANG Yue HAO State key {1. of wide bandgap semiconductor devices and Integrated Technology School of MicroelectronicsXidian University Guangzhou wide {1.gap semiconductor Innovation Center Guangzhou Institute of TechnologyXidian University State key {1. of Integrated Services Networks School of Communication EngineeringXidian University

GaN-based metal-insulator-semiconductor high-electronmobility-transistors (MISHEMTs) have many excellent performances compared with the Si and Ga As counterparts,and are prime candidates for applications in communicat...

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