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Random pinhole attenuator for high-power laser beams

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High Power Laser Science and Engineering 2024年第3期12卷 116-121页

作者： Seong Cheol Park Hyeok Yun Jin Woo Yoon Seong Ku Lee Jae Hee Sung Il Woo Choi Chang Hee Nam Kyung Taec Kim department of {1. and Photon Science Gwangju Institute of Science and TechnologyGwangjuRepublic of Korea center for Relativistic Laser Science Institute for Basic ScienceGwangjuRepublic of Korea Advanced photonics {1. Institute Gwangju Institute of Science and TechnologyGwangjuRepublic of Korea

The intensity attenuation of a high-power laser is a frequent task in the measurements of optical *** intensity can be attenuated by inserting an optical element,such as a partial reflector,polarizer or absorption *** devices are,however,not always easily applicable,especially in the case of ultra-high-power lasers,because they can alter the characteristics of a laser beam or become easily *** this study,we demonstrated that the intensity of a laser beam could be effectively attenuated using a random pinhole attenuator(RPA),a device with randomly distributed pinholes,without changing the beam *** this device,a multi-PW laser beam was successfully attenuated and the focused beam profile was measured without any alterations of its *** addition,it was confirmed that the temporal profile of a laser pulse,including the spectral phase,was ***,the RPA possesses significant potential for a wide range of applications.

关键词： high-power laser intensity attenuation laser diagnostics

Advances of machine learning in materials science: Ideas and techniques

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Frontiers of physics 2024年第1期19卷 155-194页

作者： Sue Sin Chong Yi Sheng Ng Hui-Qiong Wang Jin-Cheng Zheng department of New Energy Science and Engineering Xiamen University MalaysiaSepang 43900Malaysia Engineering research {1. of Micro-nano Optoelectronic Materials and Devices Ministry of EducationFujian Key Laboratory of Semiconductor Materials and ApplicationsCI Center for OSEDand Department of PhysicsXiamen UniversityXiamen 361005China

In this big data era, the use of large dataset in conjunction with machine learning (ML) has been increasingly popular in both industry and academia. In recent times, the field of materials science is also undergoing a big data revolution, with large database and repositories appearing everywhere. Traditionally, materials science is a trial-and-error field, in both the computational and experimental departments. With the advent of machine learning-based techniques, there has been a paradigm shift: materials can now be screened quickly using ML models and even generated based on materials with similar properties;ML has also quietly infiltrated many sub-disciplinary under materials science. However, ML remains relatively new to the field and is expanding its wing quickly. There are a plethora of readily-available big data architectures and abundance of ML models and software;The call to integrate all these elements in a comprehensive {1. procedure is becoming an important direction of material science {1.. In this review, we attempt to provide an introduction and reference of ML to materials scientists, covering as much as possible the commonly used methods and applications, and discussing the future possibilities.

关键词： machine learning materials science

Non-centrosymmetric topological phase probed by non-linear Hall effect

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National Science Review 2024年第6期11卷 180-188页

作者： Naizhou Wang Jing-Yang You Aifeng Wang Xiaoyuan Zhou Zhaowei Zhang Shen Lai Yuan-Ping Feng Hsin Lin Guoqing Chang Wei-bo Gao Division of physics and Applied physics School of Physical and Mathematical Sciences Nanyang Technological University department of {1. National University of Singapore Low Temperature physics Laboratory College of Physics and Center for Quantum Materials and Devices Chongqing University Centre for Advanced 2D Materials National University of Singapore Institute of physics Academia Sinica The photonics Institute and Centre for Disruptive Photonic Technologies Nanyang Technological University

Non-centrosymmetric topological material has atracted intense atention due to its superior characteristics as compared with the centrosymmetric one, although probing the local quantum geometry in non-centrosymmetric topological material remains challenging. The non-linear Hall（NLH） effect provides an ideal tool to investigate the local quantum geometry. Here, we report a non-centrosymmetric topological phase in ZrTe5, probed by using the NLH effect. The angle-resolved and temperature-dependent NLH measurement reveals the inversion and ab-plane mirror symmetries breaking at <30 K, consistently with our theoretical calculation. Our findings identify a new non-centrosymmetric phase of ZrTe5and provide a platform to probe and control local quantum geometry via crystal symmetries.

关键词： non-linear Hall effect topological insulator ZrTe5

Electric tuning of plasmonic resonances in ultrathin gold nanoribbon arrays

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photonics {1. 2024年第8期12卷 1750-1759页

作者： ZHENXIN WANG ALEXEY VKRASAVIN CHENXINYU PAN JUNSHENG ZHENG ZHIYONG LI XIN GUO ANATOLY VZAYATS LIMIN TONG PAN WANG State Key Laboratory of Extreme photonics and Instrumentation College of Optical Science and EngineeringZhejiang UniversityHangzhou 310027China department of {1. and London Centre for Nanotechnology King’s College LondonStrandLondon WC2R 2LSUK Jiaxing Key Laboratory of Photonic Sensing&Intelligent Imaging Intelligent Optics&Photonics Research CenterJiaxing Research Institute Zhejiang UniversityJiaxing 314000China

Ultrathin plasmonic nanostructures offer an unparalleled opportunity for the study of light–matter interactions at the nanoscale and realization of compact nanophotonic *** this study,we introduce an ultrathin gold nanoribbon array and demonstrate an electric approach to actively tuning its plasmonic resonance,which leveraging the extreme light confinement capability in the ultrathin plasmonic nanostructure and a robust nanoscale electro-optical effect in indium tin *** the design(to a total thickness as small as 1. nm for a 2-nmthick gold nanoribbon array),we numerically demonstrate a spectral shift in the plasmonic resonance up to 36 nm along with an approximately 1.%change in the transmission at a gate voltage below 1.7 V at the wavelength of1.47μ*** work presents progress towards electric tuning of plasmonic resonances in ultrathin metallic nanostructures for various applications including surface-enhanced spectroscopy,spontaneous emission enhancement,and optical modulation.

关键词： plasmon tuning realization

Mixed-dimensional stacked nanocomposite structures for a specific wavelength-selectable ambipolar photoresponse

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Nano research 2024年第6期17卷 5549-5558页

作者： Young Jae Park Jaeho Shim Joo Song Lee Kyu Seung Lee Ji-Yeon Kim Kang Bok Ko Sang-Youp Yim Seongjun Kim Hoon-Kyu Shin Donghee Park Yong Ju Yun Dong Ick Son Institute of Advanced Composite Materials Korea Institute of Science and TechnologyJeollabuk-do 55324Republic of Korea National Institute for Nanomaterials Technology Pohang University of Science and TechnologyGyeongsangbuk-do 37673Republic of Korea department of {1. Science and Technology Semiconductor Physics Research CenterJeonbuk National UniversityJeonju 54896Republic of Korea Advanced photonics {1. Institute Gwangju Institute of Science and TechnologyGwangju 61005Republic of Korea center for Opto-Electronic Materials and Devices Post-Silicon Semiconductor InstituteKorea Institute of Science and TechnologySeoul 02792Republic of Korea Graduate School of Energy and Environment(KU-KIST Green School) Korea UniversitySeoul 02841Republic of Korea KIST School Department of Nanomaterials and Nano ScienceUniversity of Science and Technology(UST)Daejeon 34113Republic of Korea

Mixed-dimensional composite structures using zero-dimensional(0D)quantum dots(QDs)and two-dimensional(2D)transition metal dichalcogenides(TMDs)materials are expected to attract great interest in optoelectronics due to the potential to generate new optical ***,we report on the unique optical characteristics of a devices with mixed dimensional vertically stacked structures based on tungsten diselenide(WSe_(2))/CdSeS QDs monolayer/molybdenum disulfide(MoS_(2))(2D/0D/2D).Specifically,it exhibits an ambipolar photoresponse characteristic,with a negative photoresponse observed in the 400-600 nm wavelength range and a positive photoresponse appeared at 700 nm *** resulted in the high negative responsivity of up to 52.22 mA·W^(−1.under 400 nm,which is 1.3 times higher than that of the photodetector without CdSeS *** also demonstrated the negative photoresponse,which could be due to increased carrier collision probability and non-radiative *** modeling and simulation reveal that Auger recombination among the types of non-radiative recombination is the main cause of negative photocurrent ***,we discovered ambipolar photoresponse near a specific wavelength corresponding to the energy of quantum *** study revealed interesting phenomenon in the mixed low-dimensional stacked structure and paved the way to exploit it for the development of innovative photodetection materials as well as for optoelectronic applications.

关键词： mixed-dimension quantum dot heterostructure photodetector ambipolar photoresponse

Thermally modulated photoelectronic synaptic behavior in HfS_(2)/VO_(2) heterostructure

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Rare Metals 2024年第8期43卷 3798-3809页

作者： Le Wang Lin Wang Xiao-Yun Ye Xiong-Hu Xu Li-Yan Shang Ya-Wei Li Jin-Zhong Zhang Liang-Qing Zhu Zhi-Gao Hu Technical center for Multifunctional Magneto-Optical Spectroscopy(Shanghai) Engineering Research Center of Nanophotonics&Advanced Instrument(Ministry of Education)Department of PhysicsSchool of Physics and Electronic ScienceEast China Normal UniversityShanghai 200241China Collaborative Innovation center of Extreme Optics Shanxi UniversityTaiyuan 030006China

Neuromorphic computing is known for its efficient computational speed,low latency,and reduced power consumption,which is considered a pivotal technology to overcome the von Neumann *** synapses are an indispensable component of neuromorphic computational artificial neural *** guarantee effective and precise processing of optical signals,it must have a high responsivity,detectivity,and the ability to adapt to various ***,a synaptic transistor based on the HfS_(2)/VO_(2) heterojunction with a responsivity of8.6×1.^(3) A·W^(-1.and a detectivity of 1.26×1.^(1.)Jones at405 nm laser was ***,the typical synaptic behavior was successfully simulated,including postsynaptic currents(PSCs),the transition from shortterm plasticity(STP)to long-term plasticity(LTP).When VO_(2) converts from the semiconductor state to the metal state,the HfS_(2)/VO_(2) heterojunction transforms into a Schottky heterojunction from a TypeⅡheterojunction with ***'s important,the heterojunction still exhibits excellent responsivity and detectivity,as well as stability of synaptic *** addition,the classical Pavlovian conditioning experiment is simulated under different laser intensity to study the brain's associative learning *** results demonstrate that the HfS_(2)/VO_(2) heterojunction synapse exhibits significant responsivity and detectivity and is adaptable to high-temperature environments,showing great potential for neuromorphic computational applic ations.

关键词： HfS_(2) VO_(2) Phase transition Photoelectric synapse Heterojunction

Flexible nanoimprint lithography enables high-throughput manufacturing of bioinspired microstructures on warped substrates for efficient III-nitride optoelectronic devices

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Science Bulletin 2024年第13期69卷 2080-2088页

作者： Siyuan Cui Ke Sun Zhefu Liao Qianxi Zhou Leonard Jin Conglong Jin Jiahui Hu Kuo-Sheng Wen Sheng Liu Shengjun Zhou center for {1. and semiconductors School of Power and Mechanical EngineeringWuhan UniversityWuhan 430072China The Institute of Technological Sciences Wuhan UniversityWuhan 430072China department of Mechanical and Mechatronics Engineering University of WaterlooWaterloo ONN2L 3G1Canada Jiangxi SMTC semiconductor Co. Ltd.Nanchang 330096China

III-nitride materials are of great importance in the development of modern optoelectronics,but they have been limited over years by low light utilization rate and high dislocation densities in heteroepitaxial films grown on foreign substrate with limited refractive index contrast and large lattice ***,we demonstrate a paradigm of high-throughput manufacturing bioinspired microstructures on warped substrates by flexible nanoimprint lithography for promoting the light extraction *** design a flexible nanoimprinting mold of copolymer and a two-step etching process that enable high-efficiency fabrication of nanoimprinted compound-eye-like Al2O3 microstructure(NCAM)and nanoimprinted compound-eye-like SiO_(2)microstructure(NCSM)template,achieving a 6.4-fold increase in throughput and 25%savings in economic costs over stepper projection *** to NCAM template,we find that the NCSM template can not only improve the light extraction capability,but also modulate the morphology of AlN nucleation layer and reduce the formation of misoriented GaN grains on the inclined sidewall of microstructures,which suppresses the dislocations generated during coalescence,resulting in 40%reduction in dislocation *** study provides a low-cost,high-quality,and high-throughput solution for manufacturing microstructures on warped surfaces of III-nitride optoelectronic devices.

关键词： Flexible nanoimprint lithography Bioinspired Micro-and nano-manufacturing III-nitride epitaxy Optoelectronic devices

High-speed performance self-powered short wave ultraviolet radiation detectors based onκ(ε)-Ga_(2)O_(3)

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Journal of semiconductors 2024年第4期45卷 56-62页

作者： Aleksei Almaev Alexander Tsymbalov Bogdan Kushnarev Vladimir Nikolaev Alexei Pechnikov Mikhail Scheglov Andrei Chikiryaka Petr Korusenko research and Development {1. for Advanced Technologies in Microelectronics National Research Tomsk State UniversityTomsk 634050Russia Fokon LLC Kaluga 248035Russia department of {1. Electronics and physics of {1.s National University of Science and Technology MISISMoscow 119049Russia Perfect Crystals LLC Saint Petersburg 194223Russia department of Solid-State Electronics Saint Petersburg State UniversitySaint Petersburg 199034Russia department of {1. Omsk State Technical UniversityOmsk 644050Russia

High-speed solar-blind short wavelength ultraviolet radiation detectors based onκ(ε)-Ga_(2)O_(3)layers with Pt contacts were demonstrated and their properties were studied in ***κ(ε)-Ga_(2)O_(3)layers were deposited by the halide vapor phase epitaxy on patterned GaN templates with sapphire *** spectral dependencies of the photoelectric properties of struc-tures were analyzed in the wavelength interval 200-370 *** maximum photo to dark current ratio,responsivity,detectiv-ity and external quantum efficiency of structures were determined as:1.0.86 ***.,3.57 A/W,1.78×1.^(1.) Hz^(0.5)∙cm·W^(-1. and 21.3.6%,respectively,at a wavelength of 200 nm and an applied voltage of 1.*** enhancement of the photoresponse was caused by the decrease in the Schottky barrier at the Pt/κ(ε)-Ga_(2)O_(3)interface under ultraviolet *** detectors demon-strated could functionalize in self-powered mode due to built-in electric field at the Pt/κ(ε)-Ga_(2)O_(3)*** responsivity and external quantum efficiency of the structures at a wavelength of 254 nm and zero applied voltage were 0.9 mA/W and 0.46%,*** rise and decay times in self-powered mode did not exceed 1.0 ms.

关键词： κ(ε)-gallium oxide solar-blind shortwave ultraviolet radiation detectors self-powered operation mode

Self-powered UVC detectors based on α-Ga_(2)O_(3) with enchanted speed performance

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Journal of semiconductors 2024年第8期45卷 74-80页

作者： Aleksei Almaev Alexander Tsymbalov Bogdan Kushnarev Vladimir Nikolaev Alexei Pechnikov Mikhail Scheglov Andrei Chikiryaka Laboratory of Metal Oxide semiconductors Research and Development Center for Advanced Technologies in MicroelectronicsNational Research Tomsk State UniversityTomsk 634050Russia Fokon LLC Kaluga 248035Russia department of {1. Electronics and physics of {1.s National University of Science and Technology MISISMoscow 119049Russia Perfect Crystals LLC Saint Petersburg 194223Russia

Detectors were developed for detecting irradiation in the short-wavelength ultraviolet(UVC)interval using high-quality single-crystallineα-Ga_(2)O_(3) films with Pt interdigital *** films ofα-Ga_(2)O_(3) were grown on planar sapphire substrates with c-plane orientation using halide vapor phase *** spectral dependencies of the photo to dark current ratio,responsivity,external quantum efficiency and detectivity of the structures were investigated in the wavelength interval of 200−370 *** maximum of photo to dark current ratio,responsivity,external quantum efficiency,and detectivity of the structures were 1.1.×1.^(4) ***.,30.6 A/W,1.65×1.^(4)%,and 6.95×1.^(1.) Hz^(0.5)·cm/W at a wavelength of 230 nm and an applied voltage of 1.*** high values of photoelectric properties were due to the internal enhancement of the photoresponse associated with strong hole ***α-Ga_(2)O_(3) film-based UVC detectors can function in self-powered operation mode due to the built-in electric field at the Pt/α-Ga_(2)O_(3) *** a wavelength of 254 nm and zero applied voltage,the structures exhibit a responsivity of 0.1. mA/W and an external quantum efficiency of 6.2×1.^(−2)%.The UVC detectors based on theα-Ga_(2)O_(3) films demonstrate high-speed performance with a rise time of 1. ms in self-powered mode.

关键词： HVPE gallium oxide solar-blind ultraviolet detector self-powered mode