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Physical modeling of a sidetrack horizontal well production to improve oil recovery

Science China(Technological Sciences) 2002年第4期45卷 353-364页

作者：王家禄江如意 Res. Inst. Petrol. Explor. Devmt. Beijing 100083 China

The scaling criteria of physical modeling of a horizontal well production are discussed. A scaled experimental model was designed and realized. The experiments of a sidetrack horizontal well production have been carried out in the system, and the production curve variation is analyzed. The oil recovery of a sidetrack horizontal well production is compared with that of a vertical well, and the effect of factors such as sidetrack drilling time, water driving rate and the length of horizontal section on oil recovery are discussed. The production of a horizontal well changed both the fluid flow direction and pressure distribution in the reservoir; as a result the remaining oil in the dead oil region is recovered, and the ultimate oil output is raised.

关键词： sidetrack horizontal well, physical modeling, improve oil recovery, remaining oil.

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High performance highly strained InGaAs quantum-well ridge waveguide lasers

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Science China(Technological Sciences) 2005年第6期48卷 679-684页

作者： A. Uddin M. Sadeghi A. Larsson School of Materials Engineering Nanyang Technological University Singapore 639798 Department of Microtechnology and Nanoscience Chalmers University of Technology S-412 96 Gte-borg Sweden

Highly strained InGaAs ridge waveguide lasers were fabricated with pulsed anodic oxidation. The laser structure was grown by molecular beam epitaxy (MBE) system. The output powers up to 50 mW per facet in CW mode were reached at room temperature for the 4 μm stripe lasers. The threshold current density of 300 A/cm2 was achieved with 600 μm cavity length. The emission wavelength at 100 mA was 1.19 μm. The slope efficiency was 0.45 W/A in linear output region of light-current characteristics. The laser characteristic temperature was 129 K (20℃―100℃).

关键词： highly strained, InGaAs quantum well, ridge waveguide lasers.

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Characteristics of InGaN multiple quantum well blue-violet laser diodes

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Science China(Technological Sciences) 2006年第6期49卷 727-732页

作者： LI Deyao1, ZHANG Shuming1, WANG Jianfeng1, CHEN Jun1, CHEN Lianghui2, CHONG Ming2, ZHU Jianjun1, ZHAO Degang1, LIU Zongshun1, YANG Hui1 & LIANG Junwu1 1. State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China 2. Nano-Optoelectronics Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China State Key Laboratory of Integrated Optoelectronics Institute of Semiconductors Chinese Academy of Sciences Beijing China Nano-Optoelectronics Laboratory Institute of Semiconductors Chinese Academy of Sciences Beijing China

Studies on InGaN multiple quantum well blue-violet laser diodes have been reported. Laser structures with long-period multiple quantum wells were grown by metal-organic chemical vapor deposition. Triple-axis X-ray diffraction (TAXRD) measurements show that the multiple quantum wells were high quality. Ridge waveguide laser diodes were fabricated with cleaved facet mirrors. The laser diodes lase at room temperature under a pulsed current. A threshold current density of 3.3 kA/cm2 and a characteristic temperature T0 of 145 K were observed for the laser diode.

关键词： metalorganic chemical vapor deposition (MOCVD), GaN-based laser diodes, multiple quantum well, ridge waveguide, threshold current.

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