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Rapid growth of ZnO hexagonal tubes by direct microwave heating

International Journal of Minerals,Metallurgy and Materials 2010年第1期17卷 80-85页

作者： Zhen-qi Zhu Jian Zhou School of Materials Science and Technology Wuhan University of Technology Wuhan 430070 China State Key Laboratory of Advanced Technology for Materials Synthesis and Processing Wuhan University of Technology Wuhan 430070 China

Zinc oxide hexagonal tubular crystals were synthesized by direct microwave heating from ZnO powders within 5 min without any metal catalysts or transport agents. ZnO source materials were evaporated from the high-temperature zone in an enclosure, and crystals were grown on the self-source substrate in an appropriate condition. The ZnO vapor formed in the high-temperature zone can deposit and grow on the powders located in the low-temperature zone to form crystals. The scanning electron microscopy （SEM） reveals that these products are hexagonal tube crystals with 80 ~rn in diameter and 250 μm in length, having a well faceted end and side surface. A possible growth mechanism and the influence of reaction temperature on the formation of crystalline ZnO hexagonal tubes were presented. The photoluminescence （PL） exhibits strong ultraviolet emission at room temperature, indicating the potential applications in short-wave light-emitting photonic devices.

关键词： ZnO crystal microwave heating vapor growth photoluminescence (PL)

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growth of uniformly doped black phosphorus films through versatile atomic substitution

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Science China(Information Sciences) 2023年第6期66卷 78-86页

作者： Cheng CHEN Yang LU Chang LI Xingang HOU Yongjie WANG Junrong ZHANG Junyong WANG Kai ZHANG School of Nano-Tech and Nano-Bionics University of Science and Technology of China CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications i-LabSuzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of Sciences Nano Science and Technology Institute University of Science and Technology of China

For the emerging excellent two-dimensional semiconductor black phosphorus(BP), doping has been proven as an effective way to tune its intrinsic properties. For the further development and expansion of BP-based research and application, the direct growth of doped BP films is highly desirable but still remains a challenge. In this work, the direct growth of uniformly doped-BP films on silicon substrates is achieved by a simple one-step vapor growth. The proposed decoupled feeding strategy significantly improves the effectiveness of doping and enables uniform dopant distribution in the grown films. The substitutional doping nature and high crystal quality of the grown doped films are confirmed by microscopy and crystal structural determination. Electrical transport measurement results reveal that Se and Te dopants perform mild electron doping effect and enable improve the electron mobility relative to pristine BP, while As dopant performs mild hole doping effect. It is believed that the direct growth of doped BP films in this work will facilitate the research development of BP in electronics and optoelectronics.

关键词： black phosphorus dope vapor growth thin film two-dimensional materials

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Rapid growth of ZnO hexagonal prism crystals by direct microwave heating

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Rare Metals 2008年第5期27卷 517-521页

作者： ZHU Zhenqi ZHOU Jian LIU Guizhen REN Zhiguo State Key Laboratory of Advanced Technology for Materials Synthesis and Processing Wuhan University of Technology Wuhan 430070 China

ZnO hexagonal prism crystals were synthesized from ZnO powders by microwave heating in a short time （within 20 min） without any metal catalyst or transport agent. Zinc oxide raw materials were made by evaporating from the high-temperature zone in an enclosure atmosphere and crystals were grown on the self-source substrate. The inherent asymmetry in microwave heating provides the temperature gradient for crystal growth. Substrate and temperature distribution in the oven show significant effects on the growth of the ZnO crystal. The morphologies demonstrate that these samples are pure hexagonal prism crystals with maximum 80 lain in diameter and 600 lure in length, which possess a well faceted end and side surface. X-ray diffraction （XRD） reveals that these samples are pure crystals. The photoluminescence （PL） exhibits strong ultraviolet emission at room temperature, indicating potential applications for short-wave light-emitting photonic devices.

关键词： zinc oxide prism crystal microwave heating vapor growth

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growth of ZnO Sub-millimeter Crystals by Microwave Heating

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Journal of Wuhan University of Technology(Materials Science) 2010年第1期25卷 94-98页

作者：祝振奇周建 State Key Laboratory of Advanced Technology for Materials Synthesis and Processing Wuhan University of Technology

ZnO sub-millimeter crystals were synthesized by microwave heating from ZnO powders without any catalyst or transport agent. Zinc oxide raw materials were evaporated from the high-temperature zone in an enclosure and crystals were grown on the self-source substrate. The thermodynamics analysis method was used to estimate the partial pressure of gases in the chamber, which shows that the pressure of ZnO could be neglected entirely in the range of experiment temperature. The kinetics analysis was employed to estimate the growth rate in different conditions, which shows a remarkable temperature gradient and a high system temperature would enhance the growth rate. Optics photos reveal that these products are hexagon crystals with 0.2-0.3 mm in diameter and 0.5-1 mm in length. A vapor-solid mechanism is proposed to explain the growth process of ZnO crystals. The temperature distribution in microwave oven is mainly determined by properties of electric field and it is different from that of a conventional method.

关键词： ZnO crystal microwave heating vapor growth

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