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Tunable quantum anomalous Hall effects in ferromagnetic van der waals heterostructures

National Science Review 2024年第3期11卷 100-107页

作者： Feng Xue Yusheng Hou Zhe Wang Zhiming Xu Ke He Ruqian Wu Yong Xu Wenhui Duan Beijing Academy of Quantum Information Sciences State Key Laboratory of Low Dimensional Quantum Physics Department of Physics Tsinghua University Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices Center for Neutron Science and Technology School of Physics Sun Yat-sen University State Key Laboratory of Surface Physics Key Laboratory of Computational Physical Sciences and Department of PhysicsFudan University Frontier Science Center for Quantum Information Department of Physics and Astronomy University of California-Irvine Tencent Quantum Laboratory Tencent Technology(Shenzhen)Co.Ltd RIKEN Center for Emergent Matter Science(CEMS) Institute for Advanced Study Tsinghua University

The quantum anomalous Hall effect（QAHE） has unique advantages in topotronic applications, but it is still challenging to realize the QAHE with tunable magnetic and topological properties for building functional devices. Through systematic first-principles calculations, we predict that the in-plane magnetization induced QAHE with Chern numbers C = ±1 and the out-of-plane magnetization induced QAHE with high Chern numbers C = ±3 can be realized in a single material candidate, which is composed of van der waals（vdW）coupled Bi and MnBi2Te4monolayers. The switching between different phases of QAHE can be controlled in multiple ways, such as applying strain or（weak） magnetic field or twisting the vdW materials. The prediction of an experimentally available material system hosting robust, highly tunable QAHE will stimulate great research interest in the field. Our work opens a new avenue for the realization of tunable QAHE and provides a practical material platform for the development of topological electronics.

关键词： quantum anomalous Hall effect topological quantum phase transition van der waals heterostructures tunable Chern number high Chern number

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Excitonic devices based on two-dimensional transition metal dichalcogenides van der waals heterostructures

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Frontiers of Chemical Science and Engineering 2024年第2期18卷 41-67页

作者： Yulun Liu Yaojie Zhu Zuowei Yan Ruixue Bai Xilin Zhang Yanbo Ren Xiaoyu Cheng Hui Ma Chongyun Jiang College of Electronic Information and Optical Engineering Nankai UniversityTianjin 300350China School of Physical Science and Technology Tiangong UniversityTianjin 300387China

Excitonic devices are an emerging class of technology that utilizes excitons as carriers for encoding, transmitting, and storing information. van der waals heterostructures based on transition metal dichalcogenides often exhibit a type II band alignment, which facilitates the generation of interlayer excitons. As a bonded pair of electrons and holes in the separation layer, interlayer excitons offer the chance to investigate exciton transport due to their intrinsic out-of-plane dipole moment and extended exciton lifetime. Furthermore, interlayer excitons can potentially analyze other encoding strategies for information processing beyond the conventional utilization of spin and charge. The review provided valuable insights and recommendations for researchers studying interlayer excitonic devices within van der waals heterostructures based on transition metal dichalcogenides. Firstly, we provide an overview of the essential attributes of transition metal dichalcogenide materials, focusing on their fundamental properties, excitonic effects, and the distinctive features exhibited by interlayer excitons in van der waals heterostructures. Subsequently, this discourse emphasizes the recent advancements in interlayer excitonic devices founded on van der waals heterostructures, with specific attention is given to the utilization of valley electronics for information processing, employing the valley index. In conclusion, this paper examines the potential and current challenges associated with excitonic devices.

关键词： excitonic devices van der waals heterostructures transition metal dichalcogenides interlayer excitons valley-Hall effect optoelectronics

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Flower-like CuS/γ-Fe_(2)O_(3) van der waals heterostructures with highefficient electromagnetic wave absorption

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Nano Research 2024年第4期17卷 3324-3333页

作者： Na Lu Jingshen Xu Mengwei Yuan Genban Sun Beijing Key Laboratory of Energy Conversion and Storage Materials Institution College of ChemistryBeijing Normal UniversityBeijing 100875China Center for Advanced Materials Research Beijing Normal UniversityZhuhai 519087China

The escalating electromagnetic(EM)pollution issues and the demand to elevate military stealth technology make it imperative to develop cost-effective and high-performance electromagnetic wave(EMW)absorbing materials.In this paper,the flower-like CuS/γ-Fe_(2)O_(3) van der waals(vdW)heterostructures have been synthesized via a facile two-step solvothermal approach.The flower-like CuS skeleton increases the attenuation path of EMW while reducing the material density.Different contents ofγ-Fe_(2)O_(3) nanoparticles anchor between the flower-like CuS nanosheets to constitute a heterogeneous structure,which enables dielectric and magnetic loss synergistically to optimize impedance matching and remarkably improve the EMW absorption performance.The minimum reflection loss(RLmin)is-49.36 dB with a thickness of only 1.6 mm and the effective absorption bandwidth(EAB)reaches 4.64 GHz(13.36–18 GHz).By adjusting the thickness of the absorber,the EAB can cover 96%of the GHz band.Notably,the superior absorption of-61.53 dB at middle frequency band can be obtained by adjusting the amount of Fe_(2)O_(3) addition.In this study,the adjustment of EM parameters and the optimization of impedance matching have been achieved by constructing a novel vdW heterogeneous structure,which provides fresh ideas and references for the design of high-performance EMW absorbing materials.

关键词： flower-like CuS γ-Fe_(2)O_(3) van der waals heterostructures impedance matching electromagnetic wave absorption

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Introducing Spin Polarization into Mixed-Dimensional van der waals heterostructures for High-Efficiency Visible-Light Photocatalysis

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Energy & Environmental Materials 2023年第5期6卷 192-200页

作者： Yong Wang Wei Xu Yu Zhang Chengxin Zeng Weining Zhang Lin Fu Mei Sun Yizhang Wu Jian Hao Wei Zhong Youwei Du Rusen Yang Academy of Advanced Interdisciplinary Research School of Advanced Materials and NanotechnologyXidian UniversityXi'an 710126China National Laboratory of Solid State Microstructures Collaborative Innovation Center of Advanced Microstructures and Jiangsu Provincial Key Laboratory for NanotechnologyNanjing UniversityNanjing 210093China Department of Physics Shaanxi University of Science and TechnologyXi'an 710021China Department of Physics State Key Laboratory of Surface PhysicsFudan UniversityShanghai 200433China State Key Laboratory of High-Efficiency Utilization of Coal and Green Chemical Engineering Ningxia UniversityYinchuan 750021China

The low separation efficiency of the photogenerated carrier and the poor activity of the surface redox reaction are the main barrier to further improvement of photocatalytic materials.To address these issues,introducing spin-polarized electrons in single-component photocatalytic materials emerged as a promising approach.However,the decreased redox ability of photocarriers in these materials becomes a new challenge.Herein,we mitigate this challenge with a carbon nitride sheet(CNs)/graphene nanoribbon(GNR)composite material that has a van der waals heterostructures(vdWHs)and spin-polarized electron properties.Experimental results and theoretical calculations show that the heterostructure has a strong redox ability,high carrier-separation efficiency,and enhanced surface catalytic reaction.Consequently,the mixed-dimensional CNs/GNR vdWHs exhibit remarkable performance for H_(2)and O_(2)generation as well as CO_(2)production under visible-light irradiation without any cocatalyst.The spin-polarized vdWHs discovered in this study revealed a new type of photocatalytic materials and advanced the development of spintronics and photocatalysis.

关键词： DFT calculations spin polarization van der waals heterostructures visible-light photocatalysis

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Two-dimensional capillaries assembled by van der waals heterostructures

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Nano Research 2023年第3期16卷 4119-4129页

作者： Jiaojiao Ma Kaiwen Guan Yu Jiang Yang Cao Sheng Hu State Key Laboratory of Physical Chemistry of Solid Surfaces Collaborative Innovation Center of Chemistry for Energy Materials(iChEM)College of Chemistry and Chemical EngineeringXiamen UniversityXiamen 361005China Innovation Laboratory for Sciences and Technologies of Energy Materials of Fujian Province(IKKEM) Xiamen 361005China Pen-Tung Sah Institute of Micro-Nano Science and Technology Xiamen UniversityXiamen 361005China

Research on two-dimensional materials in the past decades has brought many insights of low-dimensional science on a wide range of related topics.As a novel two-dimensional structure,the atomic-scale capillaries which can conceptually be seen as the empty space left by removing few layers of two-dimensional materials from their bulk van der waals crystals offer a unique platform of investigating physical and chemical processes of ions,molecules,and atoms under two-dimensional confinements.Investigation of many important problems,such as capillary condensation and water network structure that are difficult to be explored experimentally in other confinement structures,has now been accessible;two-dimensional migration of ions,water,and gases shows abnormal transport properties beyond conventional theory prediction;influence of quantum effect to molecule permeation is observable even at room temperature.All these discoveries greatly extend our fundamental understandings of nano-science,and stimulate the development of potential applications.We review the fabrication of these two-dimensional capillaries which are created by the assembly of van der waals heterostructures,and discuss the ultimate steric effects in the smallest possible confinements.Exotic interactions between capillary interior and confined particles are also summarized.When coupled with external stimuli,these channels exhibit tunable mass transport behaviors,which not only gives feedback to the mechanism understanding but in turn guides the channel structure optimization.

关键词： atomic-scale capillaries van der waals heterostructures two-dimensional materials smallest confinement mass transport

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Two dimensional GeO_(2)/MoSi_(2)N_(4)van der waals heterostructures with robust type-Ⅱ band alignment

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Frontiers of physics 2023年第1期18卷 115-122页

作者： Xueping Li Peize Yuan Lin Li Ting Liu Chenhai Shen Yurong Jiang Xiaohui Song Congxin Xia College of Electronic and Electrical Engineering Henan Normal UniversityXinxiang 453007China Department of Physics Henan Normal UniversityXinxiang 453007China Henan Key Laboratory of Optoelectronic Sensing Integrated Application Henan Normal UniversityXinxiang 453007China

Constructing two-dimensional(2D)van der waals heterostructures(vdWHs)can expand the electronic and optoelectronic applications of 2D semiconductors.However,the work on the 2D vdWHs with robust band alignment is still scarce.Here,we employ a global structure search approach to construct the vdWHs with monolayer MoSi_(2)N_(4)and widebandgap GeO_(2).The studies show that the GeO_(2)/MoSi_(2)N_(4)vdWHs have the characteristics of direct structures with the band gap of 0.946 eV and typeII band alignment with GeO_(2)and MoSi_(2)N_(4)layers as the conduction band minimum(CBM)and valence band maximum(VBM),respectively.Also,the direct-to-indirect band gap transition can be achieved by applying biaxial strain.In particular,the 2D GeO_(2)/MoSi_(2)N_(4)vdWHs show a robust type-II band alignment under the effects of biaxial strain,interlayer distance and external electric field.The results provide a route to realize the robust type-II band alignment vdWHs,which is helpful for the implementation of optoelectronic nanodevices with stable characteristics.

关键词： van der waals heterostructures wide gap material global structure search robust type-II band alignment

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Reversible doping polarity and ultrahigh carrier density in two-dimensional van der waals ferroelectric heterostructures

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Frontiers of physics 2023年第3期18卷 91-102页

作者： Yanyan Li Mingjun Yang Yanan Lu Dan Cao Xiaoshuang Chen Haibo Shu College of Optical and Electronic Technology China Jiliang UniversityHangzhou 310018China College of Science China Jiliang UniversityHangzhou 310018China National Laboratory for Infrared Physics Shanghai Institute of Technical PhysicsChinese Academy of ScienceShanghai 200083China

van der waals semiconductor heterostructures(VSHs)composed of two or more two-dimensional(2D)materials with different band gaps exhibit huge potential for exploiting high-performance multifunctional devices.The application of 2D VSHs in atomically thin devices highly depends on the control of their carrier type and density.Herein,on the basis of comprehensive first-principles calculations,we report a new strategy to manipulate the doping polarity and carrier density in a class of 2D VSHs consisting of atomically thin transition metal dichalcogenides(TMDs)andα-In_(2)X_(3)(X=S,Se)ferroelectrics via switchable polarization field.Our calculated results indicate that the band bending of In_(2)X_(3)layer driven by the FE polarization can be utilized for engineering the band alignment and doping polarity of TMD/In_(2)X_(3)VSHs,which enables us to control their carrier density and type of the VSHs by the orientation and magnitude of local FE polarization field.Inspired by these findings,we demonstrate that doping-free p–n junctions achieved in MoTe2/In2Se3 VSHs exhibit high carrier density(1013–1014 cm–2),and the inversion of the VHSs from n–p junctions to p–i–n junctions has been realized by the polarization switching from upward to downward states.This work provides a nonvolatile and nondestructive doping strategy for obtaining programmable p–n van der waals(vdW)junctions and opens the possibilities for self-powered and multifunctional device applications.

关键词： van der waals heterostructures ferroelectric polarization carrier type band alignment density-functional theory

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Bidirectional Light-Driven Ion Transport through Porphyrin Metal–Organic Framework-Based van der waals heterostructures via pH-Induced Band Alignment Inversion

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CCS Chemistry 2022年第10期4卷 3329-3341页

作者： Yuhui Zhang Linfeng Yang Yating Yang Wei Li Biying Liu Xiaoyan Jin Min Zhou Run Long Lei Jiang Wei Guo CAS Key Laboratory of Bio-Inspired Materials and Interfacial Science Technical Institute of Physics and ChemistryChinese Academy of SciencesBeijing University of Chinese Academy of Sciences Beijing College of Chemistry Key Laboratory of Theoretical and Computational Photochemistry of Ministry of EducationBeijing Normal UniversityBeijing

Heterogeneous two-dimensional layered membranes reconstructed fromnatural or synthetic van derwaals materials enable novel ion transport mechanisms by coupling with the chemical and optoelectronic properties of the layered constituents.Here,we report a light-driven and pH-dependent bidirectional ion transport phenomenon through porphyrin metal–organic framework(PMOF)and transition metal dichalcogenides-based multilayer van der waals heterostructures with sub-nanometer ionic channels.

关键词： light-driven ion transport porphyrinbased metal–organic frameworks van der waals heterostructures layered materials energy conversion

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Fabrication and applications of van der waals heterostructures

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International Journal of Extreme Manufacturing 2023年第2期5卷 149-169页

作者： Junlei Qi Zongxiao Wu Wenbin Wang Kai Bao Lingzhi Wang Jingkun Wu Chengxuan Ke Yue Xu Qiyuan He Department of Materials Science and Engineering City University of Hong Kong83 Tat Chee AvenueKowloonHong KongPeople’s Republic of China

van der waals heterostructures(vdWHs) are showing considerable potential in both fundamental exploration and practical applications. Built upon the synthetic successes of(two-dimensional) 2D materials, several synthetic strategies of vdWHs have been developed,allowing the convenient fabrication of diverse vdWHs with decent controllability, quality, and scalability. This review first summarizes the current state of the art in synthetic strategies of vdWHs, including physical combination, deposition, solvothermal synthesis, and synchronous evolution. Then three major applications and their representative vdWH devices have been reviewed, including electronics(tunneling field effect transistors and 2D contact),optoelectronics(photodetector), and energy conversion(electrocatalysts and metal ion batteries), to unveil the potentials of vdWHs in practical applications and provide the general design principles of functional vdWHs for different applications. Besides, moiré superlattices based on vdWHs are discussed to showcase the importance of vdWHs as a platform for novel condensed matter physics. Finally, the crucial challenges towards ideal vdWHs with high performance are discussed, and the outlook for future development is presented. By the systematical integration of synthetic strategies and applications, we hope this review can further light up the rational designs of vdWHs for emerging applications.

关键词： 2D materials van der waals heterostructures gas-phase deposition solvothermal synthesis synchronous evolution

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Interlayer coupling effect in van der waals heterostructures of transition metal dichalcogenides

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Frontiers of physics 2021年第1期16卷 17-22页

作者： Yuan-Yuan Wang Feng-Ping Li Wei Wei Bai-Biao Huang Ying Dai School of Physics State Key Laboratory of Crystal MaterialsShandong UniversityJinan 250100China

van der waals(vdW)heterobilayers formed by two-dimensional(2D)transition metal dichalcogenides(TMDCs)created a promising platform for various electronic and optical properties,ab initio band results indicate that the band offset of type-Ⅱband alignment in TMDCs vdW heterobilayer could be tuned by introducing Janus WSSe monolayer,instead of an external electric field.On the basis of symmetry analysis,the allowed interlayer hopping channels of TMDCs vdW heterobilayer were determined,and a four-level k·p model was developed to obtain the interlayer hopping.Results indicate that the interlayer coupling strength could be tuned by interlayer electric polarization featured by various band offsets.Moreover,the difference in the formation mechanism of interlayer valley excitons in different TMDCs vdW heterobilayers with various interlayer hopping strength was also clarified.

关键词： van der waals heterostructures transition metal dichalcogenides interlayer coupling effects k·p model interlayer exciton

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