Reversible doping polarity and ultrahigh carrier density in two-dimensional van der Waals ferroelectric heterostructures

作     者：Yanyan Li Mingjun Yang Yanan Lu Dan Cao Xiaoshuang Chen Haibo Shu Yanyan Li;Mingjun Yang;Yanan Lu;Dan Cao;Xiaoshuang Chen;Haibo Shu

作者机构：College of Optical and Electronic TechnologyChina Jiliang UniversityHangzhou 310018China College of ScienceChina Jiliang UniversityHangzhou 310018China National Laboratory for Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of ScienceShanghai 200083China 

出 版 物：《Frontiers of physics》 (物理学前沿（英文版）)

年 卷 期：2023年第18卷第3期

页      面：91-102页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0702[理学-物理学] 

基　　金：supported by the National Natural Science Foundation of China(Grant No.62174151 and 61775201) the Fund of Zhejiang Provincial Natural Science Foundation of China(Grant No.LZ22F040003 and LY22A040002) 

主　　题：van der Waals heterostructures ferroelectric polarization carrier type band alignment density-functional theory 

摘      要：Van der Waals semiconductor heterostructures(VSHs)composed of two or more two-dimensional(2D)materials with different band gaps exhibit huge potential for exploiting high-performance multifunctional *** application of 2D VSHs in atomically thin devices highly depends on the control of their carrier type and ***,on the basis of comprehensive first-principles calculations,we report a new strategy to manipulate the doping polarity and carrier density in a class of 2D VSHs consisting of atomically thin transition metal dichalcogenides(TMDs)andα-In_(2)X_(3)(X=S,Se)ferroelectrics via switchable polarization *** calculated results indicate that the band bending of In_(2)X_(3)layer driven by the FE polarization can be utilized for engineering the band alignment and doping polarity of TMD/In_(2)X_(3)VSHs,which enables us to control their carrier density and type of the VSHs by the orientation and magnitude of local FE polarization *** by these findings,we demonstrate that doping-free p–n junctions achieved in MoTe2/In2Se3 VSHs exhibit high carrier density(1013–1014 cm–2),and the inversion of the VHSs from n–p junctions to p–i–n junctions has been realized by the polarization switching from upward to downward *** work provides a nonvolatile and nondestructive doping strategy for obtaining programmable p–n van der Waals(vdW)junctions and opens the possibilities for self-powered and multifunctional device applications.