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ultrafast growth of wafer-scale fold-free bilayer graphene

Nano Research 2023年第7期16卷 10684-10689页

作者： Jilin Tang Yuechen Wang Yuwei Ma Xiaoyin Gao Xin Gao Ning Li Yani Wang Shishu Zhang Liming Zheng Bing Deng Rui Yan Yisen Cao Ronghua Zhang Lianming Tong Jin Zhang Peng Gao Zhongfan Liu Xiaoding Wei Hongtao Liu Hailin Peng Center for Nanochemistry Beijing Science and Engineering Centre for NanocarbonsBeijing National Laboratory for Molecular SciencesCollege of Chemistry and Molecular EngineeringPeking UniversityBeijing 100871China Academy for Advanced Interdisciplinary Studies Peking UniversityBeijing 100871China Beijing Graphene Institute Beijing 100095China State Key Laboratory for Turbulence and Complex System Department of Mechanics and Engineering ScienceCollege of EngineeringBeijing Innovation Center for Engineering Science and Advanced TechnologyPeking UniversityBeijing 100871China Electron Microscopy Laboratory School of PhysicsInternational Center for Quantum MaterialsPeking UniversityBeijing 100871China

Bilayer graphene provides a versatile platform for exploring a variety of intriguing phenomena and shows much promise for applications in electronics,optoelectronics,*** growth of large-area bilayer graphene is therefore highly desired yet still suffers from a slow growth rate and poor layer ***,graphene wrinkles,including folds and ripples,form during cooling due to the thermal contraction mismatch between graphene and the metal substrates,and have been far from suppressed or eliminated,especially in bilayer graphene,which would greatly degrade the extraordinary properties of *** we report the ultrafast growth of wafer-scale fold-free bilayer graphene by chemical vapor *** well-tuning the alloy thickness and strain regulation of the single-crystal CuNi(111)/sapphire,the full coverage of a 2-inch fold-free bilayer graphene wafer via mainly isothermal segregation has been achieved as fast as 30 *** tensile-strained CuNi(111)film reduces the thermal contraction mismatch and suppresses the formation of graphene folds during cooling,which is directly observed through in situ optical *** ultraflat bilayer graphene exhibits wafer-scale uniformity in electrical performance and enhanced mechanical property comparable to the exfoliated *** results offer a promising route for largescale production of bilayer graphene and enable its various applications.

关键词： bilayer graphene graphene wrinkles ultrafast growth in situ optical microscopy single crystal wafer

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ultrafast growth of large single crystals of monolayer WS2 and WSe2

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National Science Review 2020年第4期7卷 737-744页

作者： Zhengwei Zhang Peng Chen Xiangdong Yang Yuan Liu Huifang Ma Jia Li Bei Zhao Jun Luo Xidong Duan Xiangfeng Duan State Key Laboratory for Chemo/Biosensing and Chemometrics College of Chemistry and Chemical Engineering Hunan University Department of Applied Physics School of Physics and Electronics Hunan University Center for Electron Microscopy Institute for New Energy Materials and Low-Carbon Technologies School of Materials Tianjin University of Technology Department of Chemistry and Biochemistry University of California

Monolayer transition metal dichalcogenides（TMDs） have attracted considerable attention as atomically thin semiconductors for the ultimate transistor scaling. For practical applications in integrated electronics,large monolayer single crystals are essential for ensuring consistent electronic properties and high device yield. The TMDs available today are generally obtained by mechanical exfoliation or chemical vapor deposition（CVD） growth, but are often of mixed layer thickness, limited single crystal domain size or have very slow growth rate. Scalable and rapid growth of large single crystals of monolayer TMDs requires maximization of lateral growth rate while completely suppressing the vertical growth, which represents a fundamental synthetic challenge and has motivated considerable efforts. Herein we report a modified CVD approach with controllable reverse flow for rapid growth of large domain single crystals of monolayer TMDs. With the use of reverse flow to precisely control the chemical vapor supply in the thermal CVD process, we can effectively prevent undesired nucleation before reaching optimum growth temperature and enable rapid nucleation and growth of monolayer TMD single crystals at a high temperature that is difficult to attain with use of a typical thermal CVD process. We show that monolayer single crystals of 450 μm lateral size can be prepared in 10 s, with the highest lateral growth rate up to 45 μm/s. Electronic characterization shows that the resulting monolayer WSe2material exhibits excellent electronic properties with carrier mobility up to 90 cm2V-1s-1, comparable to that of the best exfoliated monolayers. Our study provides a robust pathway for rapid growth of high-quality TMD single crystals.

关键词： monolayer transition metal dichalcogenides large single crystal CVD ultrafast growth

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ultrafast growth of high-quality large-sized GaSe crystals by liquid metal promoter

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Nano Research 2022年第5期15卷 4677-4681页

作者： Zuxin Chen Quan Chen Zebing Chai Bin Wei Jun Wang Yanping Liu Yumeng Shi Zhongchang Wang Jingbo Li Institute of semiconductors South China Normal UniversityGuangzhou 510631China School of Materials Sun Yat-Sen UniversityGuangzhou 510275China School of Electrical Engineering and Automation Wuhan UniversityWuhan 430000China School of Physics and Electronics Hunan Key Laboratory for Super-microstructure and Ultrafast ProcessCentral South University932 South Lushan RoadChangsha 410083China Engineering Technology Research Center for 2D Material Information Function Devices and Systems of Guangdong Province International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of EducationInstitute of Microscale OptoelectronicsShenzhen UniversityShenzhen 518060China International Iberian Nanotechnology Laboratory(INL) 4715–330 BragaPortugal

growth of high-quality large-sized crystals using the traditional chemical vapor transport(CVT)or vertical Bridgman(VB)technique is costly and time-consuming,limiting its practical industrial ***,we propose an ultrafast crystal growth process with low energy consumption and capability of producing crystals of excellent quality,and demonstrate that large-sized GaSe crystals with a lateral size of 0.5 to 1 cm can be obtained within a short period of 5 min.X-ray diffraction(XRD)and scanning transmission electron microscopy(STEM)studies clearly indicate that the as-grown crystals have a good *** further show the potential application of the resulting GaSe crystals,we fabricate the few-layer GaSe-based photodetector,which exhibits low dark current of 21 pA and fast response of 34 ms under 405 nm *** proposed technique for rapid crystal growth could be further extended to other metallenes with low-melting point,such as Bi-,Sn-,In-,Pb-based crystals,opening up a new avenue in fulfilling diverse potential optoelectronics applications of two-dimensional(2D)crystals.

关键词： GaSe ultrafast growth photodetector liquid metal

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Iodine-assisted ultrafast growth of high-quality monolayer MoS_(2) with sulfur-terminated edges

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National Science Open 2023年第4期2卷 43-54页

作者： Qinke Wu Jialiang Zhang Lei Tang Usman Khan Huiyu Nong Shilong Zhao Yujie Sun Rongxu Zheng Rongjie Zhang Jingwei Wang Junyang Tan Qiangmin Yu Liqiong He Shisheng Li Xiaolong Zou Hui-Ming Cheng Bilu Liu Shenzhen Geim Graphene Center Tsinghua-Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate SchoolTsinghua UniversityShenzhen 518055China Institute of Functional Porous Materials School of Materials Science and EngineeringZhejiang Sci-Tech UniversityHangzhou 310018China International Center for Materials Nanoarchitectonics National Institute for Materials ScienceTsukuba 305-0044Japan Faculty of Materials Science and Engineering/Institute of Technology for Carbon Neutrality Shenzhen Institute of Advanced TechnologyChinese Academy of SciencesShenzhen 518055China Shenyang National Laboratory for Materials Sciences Institute of Metal ResearchChinese Academy of SciencesShenyang 110016China Advanced Technology Institute University of SurreyGuildfordSurrey GU27XHUK

Two-dimensional(2D)semiconductors have attracted great attention to extend Moore’s law,which motivates the quest for fast growth of high-quality ***,taking MoS_(2) as an example,current methods yield 2D MoS_(2) with a low growth rate and poor quality with vacancy concentrations three to five orders of magnitude higher than silicon and other commercial ***,we develop a strategy of using an intermediate product of iodine as a transport agent to carry metal precursors efficiently for ultrafast growth of high-quality MoS_(2).The grown MoS_(2) has the lowest density of sulfur vacancies(~1.41×10^(12) cm^(−2))reported so far and excellent electrical properties with high on/off current ratios of 108 and carrier mobility of 175 cm^(2) V^(−1) s^(−1).Theoretical calculations show that by incorporating iodine,the nucleation barrier of MoS_(2) growth with sulfur-terminated edges reduces *** sufficient supply of precursor and low nucleation energy together boost the ultrafast growth of sub-millimeter MoS_(2) domains within *** work provides an effective method for the ultrafast growth of 2D semiconductors with high quality,which will promote their applications.

关键词： 2D semiconductors molybdenum disulfides ultrafast growth defect density sulfur vacancy iodine-assisted sulfur-terminated edge

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