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Molecule-based vertical transistor via intermolecular charge transport throughπ-πstacking

Nano Research 2024年第5期17卷 4573-4581页

作者： Cheng Liu Cheng Fu Lingyu Tang Jianghua Wu Zhangyan Mu Yamei Sun Yanghang Pan Bailin Tian Kai Bao Jing Ma Qiyuan He Mengning Ding Key Laboratory of Mesoscopic Chemistry School of Chemistry and Chemical EngineeringNanjing UniversityNanjing 210023China Jiangsu Key Laboratory of Advanced Organic Materials School of Chemistry and Chemical EngineeringNanjing UniversityNanjing 210023China National Laboratory of Solid State Microstructures Jiangsu Key Laboratory of Artificial Functional MaterialsCollege of Engineering and Applied SciencesCollaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing 210093China Department of Materials Science and Engineering City University of Hong KongHong Kong 999077China

Theπ-πstacking is a well-recognized intermolecular interaction that is responsible for the construction of electron hopping channels in numerous conducting frameworks/***,the exact role ofπ-to-πchannels within typical single crystalline organic semiconductors remains unclear as the orientations of these molecules are diverse,and their control usually requires additional side chain groups that misrepresent the intrinsic properties of the original semiconducting ***,the construction of conduction channels with intrinsicπ-πstacking in the molecule-based device is crucial for the utilization of their unique transport characteristics and understanding of the transport *** this end,we present a molecular intercalation strategy that integrates two-dimensional layered materials with functional organic semiconductor molecules for functional molecule-based *** organic semiconductor molecules can be effectively intercalated into the van der Waals gaps of semi-metallic TaS_(2) withπ-πstacking configuration and controlled intercalant *** results show that the vertical charge transport in the stacking direction shows a tunneling-dominated mechanism that strongly depends on the molecular ***,we demonstrated a new type of molecule-based vertical transistor in which TaS_(2) andπ-πstacked organic molecules function as the electrical contact and the active channel,***/off ratios as high as 447 are achieved under electrostatic modulation in ionic liquid,comparable to the current state-of-the-art molecular *** study provides an ideal platform for probing intrinsic charge transport acrossπ-πstacked conjugated molecules and also a feasible approach for the construction of high-performance molecule-based electronic devices.

关键词： π-πstacking electrochemical intercalation organic semiconductor electrical transport tunneling field effect transistor

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Analysis of the subthreshold characteristics of vertical tunneling field effect transistors

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Journal of Semiconductors 2013年第1期34卷 28-34页

作者：韩忠方茹国平阮刚 State Key Laboratory of ASIC and System Department of MicroelectronicsFudan University

Subthreshold characteristics of vertical tunneling field effect transistors（VTFETs） with an nC-pocket in the pC-source are studied by simulating the transfer characteristics with a commercial device *** types of subthreshold characteristics are demonstrated for the device with different pocket thicknesses and doping *** diagram analysis shows that such a VTFET can be treated as a gate-controlled tunnel diode connected in series with a conventional n-channel metal-oxide-semiconductor *** VTFET can work either as a TFET or an n-MOSFET in the subthreshold region,depending on the turn-on sequence of these two *** our knowledge,this is the first time such a device model has been used to explain the subthreshold characteristics of this kind of VTFET and the simulation results demonstrate that such a device model is convictive and *** results indicate that the design of the nC pocket is crucial for such a VTFET in order to achieve ultra-steep turn-on characteristics.

关键词： tunneling field effect transistor metal-oxide-semiconductor field effect transistor subthreshold swing

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A non-quasi-static model for nanowire gate-all-around tunneling field-effect transistors

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Chinese Physics B 2023年第6期32卷 660-665页

作者：芦宾马鑫王大为柴国强董林鹏苗渊浩 School of Physics and Information Engineering Shanxi Normal UniversityTaiyuan 030000China Shaanxi Province Key Laboratory of Thin Films Technology&Optical Test Xi'an Technological UniversityXi'an 710032China Research and Development Center of Optoelectronic Hybrid IC Guangdong Greater Bay Area Institute of Integrated Circuit and SystemGuangzhou 510535China

Nanowires with gate-all-around(GAA) structures are widely considered as the most promising candidate for 3-nm technology with the best ability of suppressing the short channel effects,and tunneling field effect transistors(TFETs)based on GAA structures also present improved *** this paper,a non-quasi-static(NQS) device model is developed for nanowire GAA *** model can predict the transient current and capacitance varying with operation frequency,which is beyond the ability of the quasi-static(QS) model published *** agreements between the model results and numerical simulations are ***,the NQS model is derived from the published QS model including the current-voltage(I-V) and capacitance-voltage(C-V) ***,the NQS model is compatible with the QS model for giving comprehensive understanding of GAA TFETs and would be helpful for further study of TFET circuits based on nanowire GAA structure.

关键词： tunneling field effect transistor relaxation time approximation non-quasi-static non-quasi-static

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