Analysis of the subthreshold characteristics of vertical tunneling field effect transistors

作     者：韩忠方 茹国平 阮刚 

作者机构：State Key Laboratory of ASIC and SystemDepartment of MicroelectronicsFudan University 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2013年第34卷第1期

页      面：28-34页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0703[理学-化学] 0702[理学-物理学] 

基　　金：Project supported by the International Research Training Group 

主　　题：tunneling field effect transistor metal-oxide-semiconductor field effect transistor subthreshold swing 

摘      要：Subthreshold characteristics of vertical tunneling field effect transistors（VTFETs） with an nC-pocket in the pC-source are studied by simulating the transfer characteristics with a commercial device *** types of subthreshold characteristics are demonstrated for the device with different pocket thicknesses and doping *** diagram analysis shows that such a VTFET can be treated as a gate-controlled tunnel diode connected in series with a conventional n-channel metal-oxide-semiconductor *** VTFET can work either as a TFET or an n-MOSFET in the subthreshold region,depending on the turn-on sequence of these two *** our knowledge,this is the first time such a device model has been used to explain the subthreshold characteristics of this kind of VTFET and the simulation results demonstrate that such a device model is convictive and *** results indicate that the design of the nC pocket is crucial for such a VTFET in order to achieve ultra-steep turn-on characteristics.