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MOS capacitance-Voltage Characteristics:*** to Enhance the trapping capacitance

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Journal of Semiconductors 2012年第2期33卷 1-9页

作者： Jie Binbin Sah Chihtang Department of Physics Xiamen UniversityXiamen 361005China CTSAH Associates GainesvilleFlorida 32605USA

Low-frequency and High-frequency capacitance-Voltage（C-V） curves of Silicon Metal-Oxide-Semiconductor Capacitors,showing electron and hole trapping at shallow-level dopant and deep-level generation-recombination -trapping impurities,are presented to illustrate the enhancement of the giant trapping capacitances by physical means via device and circuit designs,in contrast to chemical means via impurity characteristics previously *** is realized by masking the electron or/and hole storage capacitances to make the trapping capacitances dominant at the *** and materials properties used in the computed CV curves are selected to illustrate experimental realizations for fundamental trapping parameter characterizations and for electrical and optical signal processing applications.

关键词： MOS silicon trapping capacitance dopant impurities donors acceptors

MOS capacitance-Voltage Characteristics:Ⅳ.trapping capacitance from 3-Charge-State Impurities

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Journal of Semiconductors 2012年第1期33卷 1-19页

作者： Jie Binbin Sah Chihtang Department of Physics Xiamen University Xiamen 361005China CTSAH Associates GainesvilleFlorida 32605USA

Metal-Oxide-Semiconductor capacitance-Voltage （MOSCV） characteristics containing giant carrier trapping capacitances from 3-charge-state or 2-energy-level impurities are presented for not-doped, n-doped, p- doped and compensated silicon containing the double-donor sulfur and iron, the double-acceptor zinc, and the amphoteric or one-donor and one-acceptor gold and silver impurities. These impurities provide giant trapping ca- pacitances at trapping energies from 200 to 800 meV （50 to 200 THz and 6 to 1.5 μm）, which suggest potential sub-millimeter, far-infrared and spin electronics applications.

关键词： multiple charge states trapping capacitance dopant impurity

MOS capacitance-Voltage Characteristics from Electron-trapping at Dopant Donor Impurity

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Journal of Semiconductors 2011年第4期32卷 1-9页

作者：揭斌斌薩支唐 Department of Physics Xiamen University CTSAH Associates GainesvilleFlorida 32605USA

The capacitance versus DC-voltage formula from electron trapping at dopant impurity centers is de- rived for MOS capacitors by the charge-storage method. Fermi-Dirac distribution and impurity deionization are included in the DC-voltage scale. The low-frequency and high-frequency capacitances, and their differences and derivatives, are computed in the presence of an unlimited source of minority and maj ority carriers. The results show that their difference and their DC-voltage derivatives, are large and readily measurable, hence suitable as a method for characterizing the electronic trapping parameters at dopant impurity centers and for a number of lower power signal processing and device technology monitoring applications.

关键词： MOS capacitance trapping capacitance impurity deionization spintronics

MOS capacitance-Voltage Characteristics Ⅱ.Sensitivity of Electronic trapping at Dopant Impurity from Parameter Variations

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Journal of Semiconductors 2011年第12期32卷 1-11页

作者：揭斌斌薩支唐 Department of Physics Xiamen University CTSAH Associates Gainesville

Low-frequency and high-frequency capacitance-Voltage （C-V） curves of Metal-Oxide- Semiconductor Capacitors （MOSC）, including electron and hole trapping at the dopant donor and acceptor impurities, are presented to illustrate giant trapping capacitances, from 〉 0.01Cox to 〉 10Cox. Five device and materials parameters are varied for fundamental trapping parameter characterization, and electrical and optical signal processing applications. Parameters include spatially constant concentration of the dopant-donor-impurity electron trap, NDD, the ground state electron trapping energy level depth measured from the conduction band edge, Ec - ED, the degeneracy of the trapped electron at the ground state, gD, the device temperature, T, and the gate oxide thickness, xox.

关键词： trapping capacitance donor dopant impurity electron trap MOS