MOS Capacitance-Voltage Characteristics from Electron-Trapping at Dopant Donor Impurity

作     者：揭斌斌 薩支唐 

作者机构：Department of PhysicsXiamen University CTSAH AssociatesGainesvilleFlorida 32605USA 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2011年第32卷第4期

页      面：1-9页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

基　　金：supported by the CTSAH Associates(CTSA) founded by the late Linda Su-Nan Chang Sah the Xiamen University,China 

主　　题：MOS capacitance trapping capacitance impurity deionization spintronics 

摘      要：The capacitance versus DC-voltage formula from electron trapping at dopant impurity centers is de- rived for MOS capacitors by the charge-storage method. Fermi-Dirac distribution and impurity deionization are included in the DC-voltage scale. The low-frequency and high-frequency capacitances, and their differences and derivatives, are computed in the presence of an unlimited source of minority and maj ority carriers. The results show that their difference and their DC-voltage derivatives, are large and readily measurable, hence suitable as a method for characterizing the electronic trapping parameters at dopant impurity centers and for a number of lower power signal processing and device technology monitoring applications.