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Rare Metals 2008年第5期27卷 457-462页

作者： ZHOU Jun WU Zhe LIU Zhanhe School of Aeronautic Science and Technology Beijing University of Aeronautics and Astronautics Beijing 100083 China

TiO2/Au/TiO2 multilayer thin films were deposited at polymer substrate at room temperature using dc （direct current） magnetron sputtering method. By varying the thickness of each layer, the optical and electrical properties of the TiOz/Au/TiO2 multilayer films can be tailored to suit different applications. The thickness and optical properties of the Au layer and the quality of the Au-dielectric interfaces are critical for the electrical and optical performance of the Au-dielectric multilayer thin films. At the thickness of 8 rim, the Au layer forms a continuous structure having the lowest resistivity and it must be thin for high transmittance. The multilayer stack can be optimized to have a sheet resistance of 6 D./sq. at a transmittance over 80% at 680 nm in wavelength. The peak transmittance shifts towards the long wavelength region when the thickness of the two TiO2 （upper and lower） layers increases. When the film thickness of the two TiO2 film is 45 nm, a high transmittance value is obtained for the entire visible light wavelength region.

关键词： magnetron sputtering multilayer films transparent conducting oxide optical and electrical properties

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A comparison between different ohmic contacts for ZnO thin films

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Journal of Semiconductors 2015年第3期36卷 41-45页

作者： Shadia J.Ikhmayies Naseem M.Abu El-Haija Riyad N.Ahmad-Bitar AlIsra University Faculty of Information Technology Department of Basic Sciences-Physics Physics Department Faculty of Science University of Jordan

There are several metals that form ohmic contacts for ZnO thin films, such as copper, aluminum and silver. The aim of this work is to make a comparison between these ohmic contacts. To achieve this purpose, polycrystalline ZnO thin films were prepared by the spray pyrolysis technique, and characterized by the I-V measurements at room temperature. Two strips of each metal were thermally evaporated on the surface of the film and measurements were first recorded in the dark and room light, then in the dark before and after annealing for A1, which was found to be the best in the set. Films with aluminum contacts gave the smallest resistivity, best ohmicity and they are slightly affected by light as required. On the other hand, copper was found to be the worst, and films with copper contacts gave the largest resistivity, worst ohmicity and they are the most affected by light. Annealing improved the aluminum contacts due to alloying and doping.

关键词： transparent conducting oxide ohmic contacts annealing solar cells

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Electrical and band-gap properties of amorphous zinc-indium-tin oxide thin films

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Progress in Natural Science:Materials International 2012年第1期22卷 1-6页

作者： D.B. Buchholz D.E. Proffit M.D. Wisser T.O. Mason R.P.H. Chang Department of Materials Science and Engineering Northwestern University 2220 Campus Drive Cook Hall Room 2013 Evanston IL 60208 USA

Zinc-indium-tin oxide (ZITO) films were grown by pulsed-laser deposition. Three different material compositions were investigated: ZITO-30, ZITO-50 and ZITO-70 in which 30%, 50% and 70%, respectively, of the indium in the In 2 O 3 structure was replaced by substitution with zinc and tin in equal molar proportions (co-substitution): In 2 2x Zn x Sn x O 3 , where x 0.3, 0.5, 0.7. All ZITO films grown at room temperature were amorphous. The first evidence of crystallinity was observed at higher deposition-temperature as the degree of co-substitution was increased. A decrease in mobility and conductivity was also observed as the degree of co-substitution was increased. The highest mobility for ZITO-30 and ZITO-50 was observed at deposition temperatures just prior to crystallization. The effect of deposition temperature on carrier concentration was minor compared to the effect of oxygen partial pressure during deposition.

关键词： transparent conducting oxide Semiconductor oxide Amorphous Deposition temperature

Differences between amorphous indium oxide thin films

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Progress in Natural Science:Materials International 2013年第5期23卷 475-480页

作者： D.Bruce Buchholz Li Zeng Michael J.Bedzyk Robert P.H.Chang Department of Materials Science and Engineering Northwestern University

A series of 60~nm thick indium oxide thin-films,all amorphous as determined by x-ray diffraction,were found to have physical and electrical properties that depended on the temperature of *** carrier mobility and flm conductivity decreased with decreasing deposition temperature;the best electrical properties of high mobility and conductivity were observed at a deposition temperature just below the temperature at which crystalline films *** density of the flm also decreased with deposition temperature from 7.2g/cm3 at+50℃ to 5.3g/cm3 at 100℃.

关键词： transparent conducting oxide Semiconductor oxide Amorphous Deposition temperature

Figure of Merit Enhancement of Surface Plasmon Resonance Biosensor Using Ga-Doped Zinc oxide in Near Infrared Range

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Photonic Sensors 2020年第4期10卷 340-352页

作者： Sarika PAL Alka VERMA Y.K.PRAJAPATI J.P.SAINI Department of ECE National Institute of Technology UttarakhandSrinagarGarhwal 246174India Department of ECE Institute of Engineering and Rural TechnologyAllahabadPrayagrajUttar Pradesh 211002India Department of ECE Motilal Nehru National Institute of Technology AllahabadPrayagrajUttar Pradesh 211004India Department of ECE Netaji Subhas University of Technology(NSUT)New Delhi 110078India

This work presents a surface plasmon resonance biosensor for the figure of merit enhancement by using Ga-doped zinc oxide(GZO),i.e.,nanostructured transparent conducting oxide as plasmonic material in place of metal at the telecommunication ***-dimentional graphene is used here as a biorecognition element(BRE)layer for stable and robust adsorption of *** is possible due to stronger van der Waals forces between graphene’s hexagonal cells and carbon-like ring arrangement present in *** proposed sensor shows improved biosensing due to fascinating electronic,optical,physical,and chemical properties of *** work analyses the sensitivity,detection accuracy,and figure of merit for the GZO/graphene SPR sensor on using the dielectric layer in between the prism and *** highest figure of merit of 366.7 RIU^(−1) is achieved for the proposed SPR biosensor on using the nanostructured GZO at the 3000 nm dielectric *** proposed SPR biosensor can be used practically for sensing of larger size biomolecules with due availability of advanced techniques for the fabrication of the nanostructured GZO and graphene.

关键词： SPR transparent conducting oxide Ga-doped zinc oxide sensitivity(S) detection accuracy figure of merit

Optimization of the process for preparing Al-doped ZnO thin films by sol-gel method

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中国科学:技术科学 2010年第4期 440-440页

作者： CHEN JianLin,CHEN Ding,CHEN ZhenHua College of Materials Science and Engineering,Hunan University,Changsha 410082,China

transparent and conducting Al-doped ZnO thin films with c-axis-preferred orientation were prepared on glass substrate via sol-gel *** physical and chemical changes during thermal treatment were analyzed by TG-DSC spectra and the crystallization quality was characterized by XRD *** optimized preheating and post-heating temperatures were determined at～420°C and～530°C,*** thermodynamic and kinetics views,we investigated the mechanism of orientation growth with(002) plane parallel to the *** surface morphologies of the films,post-heated at 420°C,450°C,530°C and 550°C,respectively,were observed by SEM *** film post-heated at 530°C shows a homogenous dense microstructure and exhibits the minimum sheet resistance of 140Ω/*** visible optical transmittance of all the films is beyond 90%.In addition,the annealing treatment in vacuum can contribute greatly to the electrical conductivity.

关键词： transparent conducting oxide sol-gel method zinc oxide aluminum thin films