A comparison between different ohmic contacts for ZnO thin films

作     者：Shadia J.Ikhmayies Naseem M.Abu El-Haija Riyad N.Ahmad-Bitar 

作者机构：AlIsra University Faculty of Information Technology Department of Basic Sciences-Physics Physics Department Faculty of Science University of Jordan 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2015年第36卷第3期

页      面：41-45页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0703[理学-化学] 0702[理学-物理学] 

主　　题：transparent conducting oxide ohmic contacts annealing solar cells 

摘      要：There are several metals that form ohmic contacts for ZnO thin films, such as copper, aluminum and silver. The aim of this work is to make a comparison between these ohmic contacts. To achieve this purpose, polycrystalline ZnO thin films were prepared by the spray pyrolysis technique, and characterized by the I-V measurements at room temperature. Two strips of each metal were thermally evaporated on the surface of the film and measurements were first recorded in the dark and room light, then in the dark before and after annealing for A1, which was found to be the best in the set. Films with aluminum contacts gave the smallest resistivity, best ohmicity and they are slightly affected by light as required. On the other hand, copper was found to be the worst, and films with copper contacts gave the largest resistivity, worst ohmicity and they are the most affected by light. Annealing improved the aluminum contacts due to alloying and doping.