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A 3.1-4.8GHz transmitter with a high frequency divider in 0.18μm CMOS for OFDM-UWB

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Journal of Semiconductors 2009年第12期30卷 69-76页

作者：郑仁亮任俊彦李巍李宁 Micro/Nano Science and Innovation Platform State Key Laboratory of ASIC & SystemFudan University

A fully integrated low power RF transmitter for a WiMedia 3.1-4.8 GHz multiband orthogonal frequency division multiplexing ultra-wideband system is presented. With a separate transconductance stage, the quadrature up-conversion modulator achieves high linearity with low supply voltage. The co-design of different resonant frequencies of the modulator and the differential to single （D2S） converter ensures in-band gain flatness. By means of a series inductor peaking technique, the D2S converter obtains 9 dB more gain without extra power consumption. A divided-by-2 divider is used for carrier signal generation. The measurement results show an output power between -10.7 and -3.1 dBm with 7.6 dB control range, an OIP3 up to 12 dBm, a sideband rejection of 35 dBc and a carrier rejection of 30 dBc. The ESD protected chip is fabricated in the Jazz 0.18μm RF CMOS process with an area of 1.74 mm^2 and only consumes 32 mA current （at 1.8 V） including the test associated parts.

关键词： multilband orthogonal frequency division multiplexing (MB-OFDM) ultra-wideband (UWB) transmitter quadrature-modulator divider PGA

CMOS highly linear direct-conversion transmitter for WCDMA with fine gain accuracy

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Journal of Semiconductors 2011年第8期32卷 122-127页

作者：李歆付健黄煜梅洪志良 State Key Laboratory of ASIC and System Fudan University

A highly linear,high output power,0.13μm CMOS direct conversion transmitter for wideband code division multiple access（WCDMA） is *** transmitter delivers 6.8 dBm output power with 38 mA current *** careful design on the resistor bank in the IQ-modulator,the gain step accuracy is within 0.1 dB,hence the image rejection ratio can be kept below—47 dBc for the entire output *** adjacent channel leakage ratio and the LO leakage at 6.8 dBm output power are -44 dBc @ 5 MHz and -37 dBc,respectively,and the corresponding EVM is 3.6%.The overall gain can be programmed in 6 dB steps in a 66-dB range.

关键词： WCDMA UMTS transmitter direct conversion CMOS

A dual-mode 6-9 GHz transmitter for OFDM-UWB

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Journal of Semiconductors 2011年第5期32卷 92-98页

作者：陈云锋高亭李巍李宁任俊彦 State Key Laboratory of ASIC & System Fudan University Micro-/Nano-Electronics Science and Technology Innovation Platform Fudan University

This paper presents a fully integrated dual-mode 6 to 9 GHz transmitter for both WiMedia and China MB-OFDM UWB applications. The proposed transmitter consists of a dual-mode I/Q LPF, an up-conversion mixer, a two-stage power driver amplifier and a broadband high-speed frequency divider with LO buffers for I/Q LO carrier generation. The measurement results show that the gain ripple of the transmitter is within ±1.5/±2.8 dB from 6 to 8.7/9 GHz. The output IP3 is about ＋13.2 dBm, the output 1 dBCP is around ＋2.8 dBm, and the LO leakage/sideband rejection ratio is about-35/-38 dBc. The ESD protected chip is fabricated with a TSMC 0.13 μm RFCMOS process with a die size of 1.6 × 1.3 mm^2 and the core circuit consumes only 46 mA under a 1.2 V supply.

关键词： dual-mode MB-OFDM UWB transmitter CMOS

Design of a 1.12Gb/s 11.3mW low-voltage differential signaling transmitter

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Journal of Semiconductors 2015年第4期36卷 115-121页

作者：苏源向济璇沈骁樱叶凡任俊彦 State Key Laboratory of ASIC & System Microelectronics Science and Technology Innovation Platform Fudan University

This paper presents a 1.12 Gb/s 11.3 mW transmitter using 0.18μm mixed signal complementary metal- oxide semiconductor technology with a 1.8 V supply voltage. This transmitter implements a high-speed transmission with 1.2 V common-mode output voltage, adopting a low-voltage differential signaling （LVDS） technique. A multiplexer （MUX） and an LVDS driver are critical for a transmitter to complete a high-speed data transmission. This paper proposes a high power-efficiency single-stage 14 ： 1 MUX and an adjustable LVDS driver circuit, capable of driving different loads with a slight increase in power consumption. The prototype chip implements a transmitter with a core area of 970 × 560μm2, demonstrating low power consumption and adjustable driving capability.

关键词： transmitter LVDS tree-type MUX single-stage MUX adjustable driver high power efficiency

A 3-5 GHz TH-UWB transmitter in 0.18-μm RF CMOS technology

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Journal of Semiconductors 2009年第7期30卷 105-108页

作者：段吉海王志功李智群 School of Integrated Circuits Southeast University School of Information & Communication Guilin University of Electronic Technology

An RF transmitter is proposed for 3-5 GHz time-hopping ultra wideband（TH-UWB） wireless *** transmitter consists of a 4-GHz oscillator, a switch with a controllable attenuator and an output matching *** controlling the low frequency signals with time-hopping pulse position modulation（TH-PPM）, the circuit supplies TH-UWB signals and can directly drive an antenna by a transmission *** transmitter was implemented in a 0.18-μm CMOS technology;the output amplitude is about 65 mV at a 50 ？ load from a 1.8-V supply, the return loss（S 11） at the output port is less than-10 dB, and the chip size is 0.7 × 0.8 mm2, with a power consumption of 12.3 mW.

关键词： complementary metal oxide semiconductor transmitter time-hopping ultra wideband

Novel DDS Based OFDM transmitter Structure without IFFT and Interpolation Filter

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China Communications 2021年第12期18卷 219-229页

作者： Sanjun Liu Guangming Gan School of Information Engineering Hubei Minzu UniversityEnshi 445000China School of physics and electronic information engineering Hubei Engineering UniversityWuhan 432003China

The traditional orthogonal frequency divi-sion multiplexing(OFDM)transmitter is implemented by inverse fast Fourier transform(IFFT),up-sampling and low pass shaping filter(LPSF),which occupy a large number of hardware resources and have long *** further meet the 5G and future 6G commu-nication requirements,this paper proposes a novel di-rect digital synthesis(DDS)based OFDM transmitter structure that can replace these *** to the strong parallelism of the system structure,it is very suitable for implementation on field programable gate array(FPGA)*** making two special sim-plifications to the primary structure,the refined struc-ture becomes very simple compared with the tradi-tional *** attractively,the proposed struc-ture has the following three advantages that i)the data transformation from frequency domain to time domain has zero latency,ii)the transformation length does not need to be an integer power of 2 and iii)the struc-ture does not even need to use any multiplier,thus leading to low implementation complexity and high *** experiments are carried out on Intel FPGA platform which show that our DDS based structure can save more than half of the resources com-pared with the traditional structures and can provide the same bit error rate(BER)performance under the condition without using any LPSF.

关键词： OFDM transmitter direct digital synthe-sis(DDS) fast Fourier transform(FFT)

Four-channel CWDM transmitter chip based on thin-film lithium niobate platform

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Journal of Semiconductors 2022年第11期43卷 22-28页

作者： Kaixuan Chen Gengxin Chen Ziliang Ruan Xuancong Fan Junwei Zhang Ranfeng Gan Jie Liu Daoxin Dai Changjian Guo Liu Liu Guangdong Provincial Key Laboratory of Optical Information Materials and Technology South China Academy of Advanced OptoelectronicsSouth China Normal UniversityHigher-Education Mega-CenterGuangzhou 510006China National Center for International Research on Green Optoelectronics South China Normal UniversityGuangzhou 510006China State Key Laboratory for Modern Optical Instrumentation College of Optical Science and EngineeringInternational Research Center for Advanced PhotonicsZhejiang UniversityHangzhou 310058China State Key Laboratory of Optoelectronic Materials and Technologies School of Electronics and Information TechnologySun Yat-Sen UniversityGuangzhou 510006China Jiaxing Key Laboratory of Photonic Sensing&Intelligent Imaging Intelligent Optics&Photonics Research CenterJiaxing Research InstituteZhejiang UniversityJiaxing 314000China

Multi-lane integrated transmitter chips are key components in future compact optical modules to realize high-speed optical ***-film lithium niobate(TFLN)photonics have emerged as a promising platform for achieving high-performance chip-scale optical *** a coarse wavelength-division multiplexing(CWDM)devices using fabrication-tolerant angled multimode interferometer structure and high-performance electro-optical modulators,we demonstrate monolithic on-chip four-channel CWDM transmitter on the TFLN platform for the first *** four-channel CWDM transmitter enables high-speed transmissions of 100 Gb/s data rate per wavelength channel(i.e.,an aggregated date rate of 400 Gb/s).

关键词： transmitter lithium niobate coarse wavelength-division multiplexing electro-optic modulator

A reconfigurable multi-mode multi-band transmitter with integrated frequency synthesizer for short-range wireless communication

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Journal of Semiconductors 2013年第9期34卷 140-146页

作者：祁楠陈凡张凌炜王晓曼池保勇 Institute of Microelectronics Tsinghua University

A reconfigurable multi-mode direct-conversion transmitter(TX) with integrated frequency synthesizer(FS) is presented. The TX as well as the FS is designed with a flexible architecture and frequency plan, which helps to support all the 433/868/915 MHz ISM band signals, with the reconfigurable bandwidth from 250 kHz to 2 MHz. In order to save power and chip area, only one 1.8 GHz VCO is adopted to cover the whole frequency range. All the operation modes can be regulated in real time by configuring the integrated register-bank through an SPI interface. Implemented in 180 nm CMOS, the FS achieves a frequency coverage of 320-460 MHz and 620- 920 MHz. The lowest phase noise can be -107 dBc/Hz at a 100 kHz offset and -126 dBc/Hz at a 1 MHz offset. The transmitter features a C10:2 dBm peak output power with a C9:5 dBm 1-dB-compression point and 250 kHz/500 kHz/1 MHz/2 MHz reconfigurable signal bandwidth.

关键词： transmitter frequency synthesizer multi-mode multi-band reconfigurable CMOS

A novel low-noise high-linearity CMOS transmitter for mobile UHF RFID reader

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Science China(Information Sciences) 2014年第8期57卷 187-194页

作者： LIU Shan WANG XinAn SHEN JinPeng WANG Bo YE Tao HUANG Ru Key Laboratory of Integrated Microsystems Peking University Shenzhen Graduate School

A novel CMOS transmitter with low TX noise and high linearity is implemented in a 0.18μm 1P6M standard CMOS process for Mobile UHF RFID *** double-sideband amplitude-shift-keying(DSBASK)as the only modulation is supported,this transmitter has very low power consumption.A novel analog baseband circuit is proposed to reduce the transmitter *** a G′′m–cancellation technology,a highly linear up-conversion active mixer and a power amplifier driver are *** transmitter has a measured output1 dB compression point of 13.4 *** a silicon area of about 1 mm2and consuming 144 mW from a1.8 V voltage supply,the transmitter makes the Mobile UHF RFID reader communicate with a transponder in a distance of 1 m conveniently.

关键词： transmitter mobile UHF RFID reader low noise high linearity analog baseband