CMOS highly linear direct-conversion transmitter for WCDMA with fine gain accuracy

作     者：李歆 付健 黄煜梅 洪志良 

作者机构：State Key Laboratory of ASIC and SystemFudan University 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2011年第32卷第8期

页      面：122-127页

核心收录：

学科分类：080904[工学-电磁场与微波技术] 0810[工学-信息与通信工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080401[工学-精密仪器及机械] 080402[工学-测试计量技术及仪器] 0804[工学-仪器科学与技术] 081001[工学-通信与信息系统] 

基　　金：Project supported by the National High Technology Research and Development of China(No.2009AA011605) 

主　　题：WCDMA UMTS transmitter direct conversion CMOS 

摘      要：A highly linear,high output power,0.13μm CMOS direct conversion transmitter for wideband code division multiple access（WCDMA） is *** transmitter delivers 6.8 dBm output power with 38 mA current *** careful design on the resistor bank in the IQ-modulator,the gain step accuracy is within 0.1 dB,hence the image rejection ratio can be kept below—47 dBc for the entire output *** adjacent channel leakage ratio and the LO leakage at 6.8 dBm output power are -44 dBc @ 5 MHz and -37 dBc,respectively,and the corresponding EVM is 3.6%.The overall gain can be programmed in 6 dB steps in a 66-dB range.