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检索条件"主题词=threshold voltage"
79 条 记 录,以下是1-10 订阅
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New analytical threshold voltage model for halo-doped cylindrical surrounding-gate MOSFETs
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Journal of Semiconductors 2011年 第7期32卷 20-27页
作者: 李聪 庄奕琪 韩茹 Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices of Ministry of Education School of MicroelectronicsXidian University Aviation Microelectronics Center Northwestern Polytechnic University
Using an exact solution of two-dimensional Poisson's equation in cylindrical coordinates,a new analytical model comprising electrostatic potential,electric field,threshold voltage and subthreshold current for halodop... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
A threshold voltage analytical model for high-k gate dielectric MOSFETs with fully overlapped lightly doped drain structures
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Chinese Physics B 2012年 第5期21卷 596-601页
作者: 马飞 刘红侠 匡潜玮 樊继斌 Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Material and Devices School of MicroelectronicsXidian University
We investigate the influence of voltage drop across the lightly doped drain(LDD) region and the built-in potential on MOSFETs,and develop a threshold voltage model for high-k gate dielectric MOSFETs with fully overl... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
A two-dimensional threshold voltage analytical model for metal-gate/high-k/SiO_2 /Si stacked MOSFETs
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Chinese Physics B 2012年 第10期21卷 439-445页
作者: 马飞 刘红侠 樊继斌 王树龙 Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Material and Devices School of MicroelectronicsXidian University
In this paper the influences of the metal-gate and high-k/SiO 2 /Si stacked structure on the metal-oxide-semiconductor field-effect transistor(MOSFET) are *** flat-band voltage is revised by considering the influenc... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
A two-dimensional analytical model for channel potential and threshold voltage of short channel dual material gate lightly doped drain MOSFET
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Chinese Physics B 2014年 第11期23卷 620-625页
作者: Shweta Tripathi Department of Electronics & Communication Engineering Motilal Nehru National Institute of Technology
An analytical model for the channel potential and the threshold voltage of the short channel dual-material-gate lightly doped drain (DMG-LDD) metal-oxide-semiconductor field-effect transistor (MOSFET) is presented... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
A threshold voltage and drain current model for symmetric dual-gate amorphous In GaZnO thin film transistors
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Science China(Information Sciences) 2018年 第2期61卷 194-203页
作者: Minxi CAI Ruohe YAO School of Electronic and Information Engineering South China University of Technology
Based on the drift-diffusion theory, a simple threshold voltage and drain current model for symmetric dual-gate(DG) amorphous In Ga Zn O(a-IGZO) thin film transistors(TFTs) is developed. In the subthreshold region, mo... 详细信息
来源: 同方期刊数据库 同方期刊数据库 评论
An analytical threshold voltage model for dual-strained channel PMOSFET
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Chinese Physics B 2010年 第11期19卷 608-614页
作者: 秦珊珊 张鹤鸣 胡辉勇 戴显英 宣荣喜 舒斌 Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices School of MicroelectronicsXidian University
Based on the analysis of vertical electric potential distribution across the dual-channel strained p-type Si/strained Si1-xGex/relaxd Si1-yGey(s-Si/s-SiGe/Si1-yGey) metal-oxide-semiconductor field-effect transistor ... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
A two-dimensional analytical modeling for channel potential and threshold voltage of short channel triple material symmetrical gate Stack(TMGS) DG-MOSFET
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Chinese Physics B 2016年 第10期25卷 518-524页
作者: Shweta Tripathi Department of Electronics & Communication Engineering Motilal Nehru National Institute of Technology
In the present work, a two-dimensional(2D) analytical framework of triple material symmetrical gate stack(TMGS)DG-MOSFET is presented in order to subdue the short channel effects. A lightly doped channel along wit... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
Directly extracting both threshold voltage and series resistance from the conductance-voltage curve of an AlGaN/GaN Schottky diode
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Chinese Physics B 2013年 第7期22卷 426-429页
作者: 吕元杰 冯志红 顾国栋 敦少博 尹甲运 韩婷婷 盛百城 蔡树军 刘波 林兆军 Science and Technology on Application Specific Integrated Circuit (ASIC) Laboratory Hebei Semiconductor Research Institute School of Physics Shandong University
An Ni/Au Schottky contact on an AlGaN/GaN heterostructure has been prepared. By using the peak-conductance model, the threshold voltage and the series resistance of the AlGaN/GaN diode are simultaneously extracted fro... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
A physical-based pMOSFETs threshold voltage model including the STI stress effect
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Journal of Semiconductors 2011年 第5期32卷 57-61页
作者: 吴畏 杜刚 刘晓彦 孙雷 康晋峰 韩汝琦 Institute of Microelectronics Peking University
The physical threshold voltage model of pMOSFETs under shallow trench isolation (STI) stress has been developed. The model is verified by 130 nm technology layout dependent measurement data. The comparison between p... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
Low threshold voltage light-emitting diode in silicon-based standard CMOS technology
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Chinese Optics Letters 2011年 第8期9卷 75-78页
作者: 董赞 王伟 黄北举 张旭 关宁 陈弘达 State Key Laboratory on Integrated Optoelectronics Institute of SemiconductorsChinese Academy of Sciences
Low-voltage silicon (Si)-based light-emitting diode (LED) is designed based on the former research of LED in Si-based standard complementary metal oxide semiconductor (CMOS) technology. The low-voltage LED is de... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论