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First-principles study on the alkali chalcogenide secondary compounds in Cu(In,Ga)Se_2 and Cu_2ZnSn(S,Se)_4 thin film solar cells

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Journal of Energy Chemistry 2018年第4期27卷 1140-1150页

作者： Xian Zhang Dan Han Shiyou Chen Chungang Duan Junhao Chu Key Laboratory of Polar Materials and Devices (MOE) East China Normal University Collaborative Innovation Center of Extreme Optics Shanxi University

The beneficial effect of the alkali metals such as Na and K on the Cu（***）Se2 （CIGS） and Cu2ZnSn（S,Se）4 （CZTSSe） solar cells has been extensively investigated in the past two decades, however, in most of the studies the alkali metals were treated as dopants. Several recent studies have showed that the alkali metals may not only act as dopants but also form secondary phases in the absorber layer or on the surfaces of the films. Using the first-principles calculations, we screened out the most probable secondary phases of Na and K in CIGS and CZTSSe, and studied their electronic structures and optical properties. We found that all these alkali chalcogenide compounds have larger band gaps and lower VBM levels than CIGS and CZTSSe, because the existence of strong p-d coupling in CIS and CZTS pushes the valence band maximum （VBM） level up and reduces the band-gaps, while there is no such p-d coupling in these alkali chalcogenides. This band alignment repels the photo-generated holes from the secondary phases and prevents the electron-hole recombination. Moreover, the study on the optical properties of the secondary phases showed that the absorption coefficients of these alkali chalcogenides are much lower than those of CIGS and CZTSSe in the energy range of 0-3.4eV, which means that the alkali chalcogenides may not influence the absorption of solar light. Since the alkali metal dopants can passivate the grain boundaries and increase the hole carrier concentration, and meanwhile their related secondary phases have innocuous effect on the optical absorption and band alignment, we can understand why the alkali metal dopants can improve the CIGS and CZTSSe solar cell performance.

关键词： Cu(In,Ga)Se2 and Cu2ZnSn(S,Se)4 thin film solar cells First-principles calculations Secondary phases Alkali dopants

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Analysis of the p^+/p window layer of thin film solar cells by simulation

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Journal of Semiconductors 2012年第2期33卷 23-27页

作者： Lin Aiguo Ding Jianning Yuan Ningyi Wang Shubo Cheng Guanggui Lu Chao Center of Micro/Nano Science&Technology Jiangsu UniversityZhenjiang 212013China Center of Low-Dimension Materials Micro/Nano Device and SystemChangzhou UniversityChangzhou 213164China Jiangsu Laboratory for solar Cell Materials and Technology Changzhou 213164China

The application of a p~＋/p configuration in the window layer of hydrogenated amorphous silicon thin film solar cells is simulated and analyzed utilizing an AMPS-ID *** differences between p~＋-p-i-n configuration solar cells and p-i-n configuration solar cells are pointed *** effects of dopant concentration, thickness of p~＋-layer,contact barrier height and defect density on solar cells are *** results indicate that solar cells with a p~＋-p-i-n configuration have a better *** open circuit voltage and short circuit current were improved by increasing the dopant concentration of the p~＋ layer and lowering the front contact barrier *** defect density at the p/i interface which exceeds two orders of magnitude in the intrinsic layer will deteriorate the cell property.

关键词： p~+/p configuration thin film solar cells hydrogenated amorphous silicon solar cells window layer

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Application of facile solution-processed ternary sulfide Ag_8SnS_6 as light absorber in thin film solar cells

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Science China Materials 2018年第12期61卷 1549-1556页

作者： Liangzheng Zhu Yafeng Xu Haiying Zheng Guozhen Liu Xiaoxiao Xu Xu Pan Songyuan Dai Key Laboratory of Photovoltaic and Energy Conservation Materials Institute of Applied TechnologyHefei Institutes of Physical ScienceChinese Academy of SciencesHefei 230031China University of Science and Technology of China Hefei 230026China State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources North China Electric Power UniversityBeijing 102206China

Light absorber is critical to the further applications of thin film solar cells. Here, we report a facile solution-processed method with an annealing temperature below250°C to fabricate Ag8 SnS6(ATS) light absorber for thin film solar cells. After optimization, the ATS-based thin film solar cells exhibited a reproducible power conversion efficiency(PCE) of about 0.25% and an outstanding long-term stability with 90% of the initial PCE retained after a more than 1,000 h degradation test. This research revealed the potential application of ATS as an earth-abundant, low toxic and chemically stable light absorber in thin film solar cells.

关键词： thin film solar cells ternary sulfide light absorber

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Observation on Surface and Cross Section of thin film solar cells Using Atomic Force Microscope

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Semiconductor Photonics and Technology 2005年第2期11卷 111-115页

作者： FENGLiang-huan WULi-li CAIWei CAIYa-ping ZHENGJia-gui ZHANGJing-quan LIBing LIWei CollegeofMater.Sci.andEng. SichuanUniversityChengdu610064CHN

Atomic force microscope (AFM) is able to produce three-dimensional digital data in both force-mode and height-mode and its applications are not limited to map the surfaces of conducting materials. It can use the force-mode to image the repulsive and attractive force patterns. The cross sections of polycrystalline CdS/CdTe and amorphous silicon heterojunction solar cells are observed with AFM. In case of short circuit, the microstructures of different layers in the samples are clearly displayed. When the cells are open circuit, the topographical images are altered, the potential outline due to the space charge in junction region is observed. Obviously, AFM can be employed to investigate experimentally built-in potential in junction of semiconductor devices, such as solar cells.

关键词： AFM morphology thin film solar cells

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Reactive Magnetron Sputtering of Sulfide films-A New Approach for Large Area Deposition of thin film solar cells

Reactive Magnetron Sputtering of Sulfide Films-A New Approac...

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第十五届国际光伏科学与工程大会

作者： Stefan Seeger Thomas Unold Klaus Ellmer Hahn-Meitner-lnstitut Solarenergieforschung Glienicker Str.100 14109 Berlin Germany

Reactive magnetron sputtering from metallic targets in an argon-hydrogen-sulfide atmosphere (Ar/HS) can be used to deposit high-quality active layers (absorbers, buffers) in thin film solar cells consisting of sulfidic compound semiconductors. The deposition parameters substrate temperature, sputtering pressure and excitation mode of the plasma have to be tailored to the specific compound semiconductor material. The ion assistance during the film growth has to be controlled in such a way as to promote the film growth at low temperatures without introducing crystallographic and electronic defects due to high energy particle bombardment of the film. Examples are given for the preparation of CuInS, WS (absorbers) and InS (buffer). The encouraging results show that in the near future a large-scale magnetron sputter deposition process for complete thin film solar cells is feasible.

关键词： Reactive Magnetron Sputtering thin film solar cells Ion Assisted Growth Large-Area Deposition

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Recent progress in defect engineering for kesterite solar cells

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Science China(Physics,Mechanics & Astronomy) 2023年第1期66卷 18-33页

作者： Kaiwen Sun Jialiang Huang Jianjun Li Chang Yan Xiaojing Hao Australian Centre for Advanced Photovoltaics School of Photovoltaic and Renewable Energy EngineeringUniversity of New South WalesSydney 2033Australia

Kesterite Cu_(2)ZnSn(S,Se)_(4)(CZTSSe)thin film solar cells have been regarded as one of the most promising thin film photovoltaic technologies,offering a low-cost and environmentally friendly solar energy *** remarkable advances have been achieved in kesterite solar cells,the performance gap relative to mature thin film photovoltaic technologies such as CIGSe and Cd Te remains *** open-circuit voltage(V_(OC))deficit has been recognized as the main limiting factor to performance improvement,with undesirable intrinsic defects being a key culprit contributing to the low V_(OC).To realize the promise inherent in kesterite CZTS to become an earth-abundant alternative to existing thin film photovoltaic technologies with comparable performance,significant research effort has been invested to tackle the challenging defect *** this review,recent progress and achievements relevant to engineering improvements to the defect properties of the semiconductor have been examined and *** strategies include:(i)manipulating the synthesis process to obtain a desirable reaction pathway and chemical environment;(ii)introducing cation substitution to increase the ionic size difference and supress the related band tailing deep-level defects;(iii)applying post deposition treatment(PDT)with alkaline elements to passivate the detrimental *** advances obtained from work on kesterite solar cells may lead to future high performance from this material and may be further extended to other earth-abundant chalcogenide photovoltaic technologies.

关键词： thin film solar cells kesterite solar cells Cu_(2)ZnSn(S,Se)_(4)(CZTSSe,CZTS) defect engineering

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Path towards high-efficient kesterite solar cells

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Journal of Energy Chemistry 2018年第4期27卷 1040-1053页

作者： Dongxiao Wang Wangen Zhao Yi Zhang Shengzhong(Frank)Liu Institute of Photoelectronic thin film Devices and Technology and Key Laboratory of Photoelectronic thin film Devices and Technology Tianjin Nankai UniversityTianjin 300071China Key Laboratory for Applied Surface and Colloid Chemistry National Ministry of EducationShaanxi Engineering Lab for Advanced Energy TechnologySchool of Materials Science and EngineeringShaanxi Normal UniversityXi'an 710062ShaanxiChina Dalian National Laboratory for Clean Energy iChEM(Collaborative Innovation Center of Chemistry for Energy Materials)Dalian Institute of Chemical PhysicsChinese Academy of SciencesDalian 116023.LiaonigChina

Kesterite structure semiconductor Cu2ZnSn（S,Se）4 is one of the most promising candidate as a light absorber material to overtake the next generation of thin film solar cells, owing to its low cost, non-toxic, and earth abundant source materials. The Sbockley-Queisser limit of the single junction Cu2ZnSn（S,Se）4 solar cell is over 30%, signifying a large potential of this family of solar cells. In the past years, with the development of synthesis techniques, Cu2ZnSn（S,Se）4 solar cells have attracted considerable atten- tion and the power conversion efficiency of Cu2ZnSn（S,Se）4 solar cell has experienced a rapid progress. Presently, the certified champion efficiency of CZTSSe solar cells has reached to 12.6%, which is far below the efficiency of Cu（ln,Ga）Se2 solar cell. In this review, the developments of Cu2ZnSn（S,Se）4 solar cells in recent years are briefly reviewed. Then the fundamental understanding of Cu2ZnSn（S,Se）4 solar cells is introduced, including materials and device structure, as well as the band alignment of hetero-junction and their impacts on device performance. After that, we mainly review the progress and achievements in the preparation processes, through vacuum and non-vacuum based processes. Finally, we outline the challenges and perspectives of this promising solar cell.

关键词： Kesterite CZTS thin film solar cells

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Enhanced optical absorption by Ag nanoparticles in a thin film Si solar cell

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Chinese Physics B 2013年第4期22卷 330-333页

作者：陈凤翔汪礼胜许文英 Department of Physics Science and Technology Wuhan University of Technology

thin film solar cells have the potential to significantly reduce the cost of photovoltaics. Light trapping is crucial to such a thin film silicon solar cell because of a low absorption coefficient due to its indirect band gap. In this paper, we investigate the suitability of surface plasmon resonance Ag nanoparticles for enhancing optical absorption in the thin film solar cell. For evaluating the transmittance capability of Ag nanoparticles and the conventional antireflection film, an enhanced transmittance factor is introduced. We find that under the solar spectrum AM1.5, the transmittance of Ag nanoparticles with radius over 160 nm is equivalent to that of conventional textured antireflection film, and its effect is better than that of the planar antireflection film. The influence of the surrounding medium is also discussed.

关键词： transmittance surface plasmon resonance Ag nanoparticles thin film solar cells

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Effects of deposition pressure and plasma power on the growth and properties of boron-doped microcrystalline silicon films

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Chinese Physics B 2008年第4期17卷 1394-1399页

作者：陈永生杨仕娥汪建华卢景霄郜小勇谷景华郑文赵尚丽 Key Laboratory of Material Physics Department of PhysicsZhengzhou University Institute of Plasma Physics Chinese Academy of Sciences Depart of Materials Science and Engineering Wuhan Institute of Technology

Using diborane as doping gas, p-doped μc-Si：H layers are deposited by using the plasma enhanced chemical vapour deposition （PECVD） technology. The effects of deposition pressure and plasma power on the growth and the properties of μc-Si：H layers are investigated. The results show that the deposition rate, the electrical and the structural properties are all strongly dependent on deposition pressure and plasma power. Boron-doped μc-Si：H films with a dark conductivity as high as 1.42 Ω^-1·cm^-1 and a crystallinity of above 50% are obtained. With this p-layer, μc-Si：H solar cells are fabricated. In addition, the mechanism for the effects of deposition pressure and plasma power on the growth and the properties of boron-doped μc-Si：H layers is discussed.

关键词： boron-doped μc-Si:H films thin film solar cells Raman crystallinity dark conductivity

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Improving the Performance of PbS Quantum Dot solar cells by Optimizing ZnO Window Layer

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Nano-Micro Letters 2017年第2期9卷 156-165页

作者： Xiaokun Yang Long Hu Hui Deng Keke Qiao Chao Hu Zhiyong Liu Shengjie Yuan Jahangeer Khan Dengbing Li Jiang Tang Haisheng Song Chun Cheng Wuhan National Laboratory for Optoelectronics(WNLO)and School of Optical and Electronic Information Huazhong University of Science and TechnologyWuhan 430074People’s Republic of China State Key Laboratory of Digital Manufacturing Equipment and Technology Huazhong University of Science and TechnologyWuhan 430074People’s Republic of China Department of Materials Science and Engineering and Shenzhen Key Laboratory of Nanoimprint Technology South University of Science and TechnologyShenzhen 518055People’s Republic of China

Comparing with hot researches in absorber layer,window layer has attracted less attention in PbS quantum dot solar cells(QD SCs). Actually, the window layer plays a key role in exciton separation, charge drifting, and so ***, ZnO window layer was systematically investigated for its roles in QD SCs performance. The physical mechanism of improved performance was also explored. It was found that the optimized ZnO films with appropriate thickness and doping concentration can balance the optical and electrical properties, and its energy band align well with the absorber layer for efficient charge extraction. Further characterizations demonstrated that the window layer optimization can help to reduce the surface defects, improve the heterojunction quality, as well as extend the depletion width. Compared with the control devices, the optimized devices have obtained an efficiency of 6.7% with an enhanced V_(oc) of 18%, J_(sc) of 21%, FF of 10%, and power conversion efficiency of 58%. The present work suggests a useful strategy to improve the device performance by optimizing the window layer besides the absorber layer.

关键词： ZnO Window layer thin film solar cells PbS quantum dots Physical mechanism

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