Reactive Magnetron Sputtering of Sulfide Films-A New Approach for Large Area Deposition of Thin Film Solar Cells
作者单位：Hahn-Meitner-lnstitut Solarenergieforschung Glienicker Str.100 14109 Berlin Germany
会议名称：《第十五届国际光伏科学与工程大会》
会议日期：2005年
学科分类：08[工学] 080502[工学-材料学] 0805[工学-材料科学与工程（可授工学、理学学位）]
关 键 词：Reactive Magnetron Sputtering Thin Film Solar Cells Ion Assisted Growth Large-Area Deposition
摘 要：Reactive magnetron sputtering from metallic targets in an argon-hydrogen-sulfide atmosphere (Ar/HS) can be used to deposit high-quality active layers (absorbers, buffers) in thin film solar cells consisting of sulfidic compound semiconductors. The deposition parameters substrate temperature, sputtering pressure and excitation mode of the plasma have to be tailored to the specific compound semiconductor material. The ion assistance during the film growth has to be controlled in such a way as to promote the film growth at low temperatures without introducing crystallographic and electronic defects due to high energy particle bombardment of the film. Examples are given for the preparation of CuInS, WS (absorbers) and InS (buffer). The encouraging results show that in the near future a large-scale magnetron sputter deposition process for complete thin film solar cells is feasible.