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tan wet etch for application in dual-metal-gate integration technology

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Journal of Semiconductors 2009年第12期30卷 133-136页

作者：李永亮徐秋霞 Institute of Microelectronics Chinese Academy of Sciences

Wet-etch etchants and the tan film method for dual-metal-gate integration are investigated. Both HF/HN O3/H2O and NH4OH/H2O2 solutions can etch tan effectively, but poor selectivity to the gate dielectric for the HF/HNO3/H2O solution due to HF being included in HF/HNO3/H2O, and the fact that tan is difficult to etch in the NH4OH/H2O2 solution at the first stage due to the thin TaOxNy layer on the tan surface, mean that they are difficult to individually apply to dual-metal-gate integration. A two-step wet etching strategy using the HF/HNO3/H2O solution first and the NH4OH/H2O2 solution later can fully remove thin tan film with a photo-resist mask and has high selectivity to the HfSiON dielectric film underneath. High-k dielectric film surfaces are smooth after wet etching of the tan metal gate and MOSCAPs show well-behaved C-V and Jg-Vg characteristics, which all prove that the wet etching of tan has little impact on electrical performance and can be applied to dual-metal-gate integration technology for removing the first tan metal gate in the PMOS region.

关键词： tan wet etching metal gate high k dielectric integration

Corrosion Resistance of Single Layer and Multilayer tan Coatings

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稀有金属材料与工程 2011年第S4期40卷 203-205页

作者： Sun Gang1,Ma Guojia1,2,Liu Xing2,Zhang Lin2 1Beijing Aeronautical Manufacturing Technology Research Institute,Beijing 100024,China2Dalian University of Technology,Dalian 116024,China Beijing Aeronaut Mfg Technol Res Inst Beijing 100024 Peoples R China Dalian Univ Technol Dalian 116024 Peoples R China

In this study,the tan single and multilayer coatings were deposited on Cr12MoV steel substrates by magnetron sputtering *** phase structure,chemical composition,and morphology of coatings were observed utilizing X-ray diffraction 、atom force microscope and scanning electron *** corrosion behaviors of the coatings were studied in aerated 3.5wt.% NaCl aqueous solutions by interpretation of the electrochemical anodic polarization *** results showed that the single tan coatings were deteriorated than tan multilayer *** the effect that the multilayer coating can make some porous in the coatings closed,the structure and morphology are also important reasons which cause the different corrosion resistance ability between them.

关键词： tan multilayer coatings corrosion behaviors

Mechanical Properties of Polycrystalline TiN/tan Multilayers

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Journal of Materials Science & Technology 1997年第4期13卷 245-248页

作者： W.H.Soe and R.Yamamoto(Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo 106, Japan ) Institute of Industrial Science University of Tokyo Minato-ku Tokyo 106 7-22-1 Roppongi Japan

Polycrystalline TiN/tan multilayers were grown by reactive magnetron sputtering on WC-Co sintered hard alloy Substrates. Multilayer structure and composition modulation amplitudes were studied using X-ray diffraction method. Hardness and elastic modulus were measured by nanoindentation tester. For A>8.0 nm, hardness is lower than rule-of mixtures value of individual single layer, and increased rapidly with decreasing A, peaking at hardness values≈33% higher than that at A=4.3 nm. As a result of analysing the inclination of applied load for indenter displacement on P-h curve (△P/△h), this paper exhibits that the enhancement of the resistance to dislocation motion and elastic anomaly due to coherency strains are responsibie for the hardness change

关键词： tan Mechanical Properties of Polycrystalline TiN/tan Multilayers TiN nm

The effects of process condition of top-TiN and tan thickness on the effective work function of MOSCAP with high-k/metal gate stacks

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Journal of Semiconductors 2014年第10期35卷 187-189页

作者：马雪丽杨红王文武殷华湘朱慧珑赵超陈大鹏叶甜春 Institute of Microelectronics Chinese Academy of Sciences

： We introduced a tan/TiAl/top-TiN triple-layer to modulate the effective work function of a TiN-based metal gate stack by varying the tan thickness and top-TiN technology process. The results show that a thinner tan and PVD-process top-TiN capping provide smaller effective work function （EWF）, and a thicker tan and ALD-process top-TiN capping provides a larger EWF; here, the EWF shifts are from 4.25 to 4.56 eV. A physical understanding of the dependence of the EWF on the top-TiN technology process and tan thickness is proposed. Compared with PVD-TiN room temperature process, the ALD-TiN 400 ℃ process provides more thermal budget. It would also promote more Al atoms to diffuse into the top-TiN rather than the bottom-TiN. Meanwhile, the thicker tan prevents the Al atoms diffusing into the bottom-TiN. These facts induce the EWF to increase.

关键词： tan ALD-TiN PVD-TiN effective work function

A high performance HfSiON/tan NMOSFET fabricated using a gate-last process

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Chinese Physics B 2013年第11期22卷 536-540页

作者：许高博徐秋霞殷华湘周华杰杨涛牛洁斌余嘉晗李俊峰赵超 Key Laboratory of Microelectronics Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences

A gate-last process for fabricating HfSiON/tan n-channel metal-oxide-semiconductor-field-effect transistors （NMOSFETs） is presented. In the process, a HfSiON gate dielectric with an equivalent oxide thickness of 10 ？ was prepared by a simple physical vapor deposition method. Poly-Si was deposited on the HfSiON gate dielectric as a dummy gate. After the source/drain formation, the poly-Si dummy gate was removed by tetramethylammonium hydroxide （TMAH） wet-etching and replaced by a tan metal gate. Because the metal gate was formed after the ion-implant doping activation process, the effects of the high temperature process on the metal gate were avoided. The fabricated device exhibits good electrical characteristics, including good driving ability and excellent sub-threshold characteristics. The device’s gate length is 73 nm, the driving current is 117 μA/μm under power supply voltages of VGS=VDS=1.5 V and the off-state current is only 4.4 nA/μ. The lower effective work function of tan on HfSiON gives the device a suitable threshold voltage （～ 0.24 V） for high performance NMOSFETs. The device’s excellent performance indicates that this novel gate-last process is practical for fabricating high performance MOSFETs.

关键词： HfSiON tan gate-last process planarization

An effective work-function tuning method of nMOSCAP with high-k/metal gate by TiN/tan double-layer stack thickness

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Journal of Semiconductors 2014年第9期35卷 162-165页

作者：马雪丽杨红王文武殷华湘朱慧珑赵超陈大鹏叶甜春 Institute of Microelectronics Chinese Academy of Sciences

We evaluated the TiN/tan/TiA1 triple-layer to modulate the effective work function （EWF） of a metal gate stack for the n-type metal-oxide-semiconductor （NMOS） devices application by varying the TiN/tan thickness. In this paper, the effective work function of EWF ranges from 4.22 to 4.56 eV with different thicknesses of TiN and tan. The thinner TiN and/or thinner in situ tan capping, the closer to conduction band of silicon the EWF is, which is appropriate for 2-D planar NMOS. Mid-gap work function behavior is observed with thicker TiN, thicker in situ tan capping, indicating a strong potential candidate of metal gate material for replacement gate processed three-dimensional devices such as FIN shaped field effect transistors. The physical understandings of the sensitivity of EWF to TiN and tan thickness are proposed. The thicker TiN prevents the A1 diffusion then induces the EWF to shift to mid-gap. However, the tan plays a different role in effective work function tuning from TiN, due to the Ta-O dipoles formed at the interface between the metal gate and the high-k layer.

关键词： tan TiA1 Ta-O dipole effective work function

Effect of Annealing on Mechanical Properties of tan Film

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稀有金属材料与工程 2011年第S4期40卷 218-220页

作者： Liu Xing1,2,Ma Guojia1,2,Sun Gang2,Duan Yuping1,Liu Shunhua11School of Material and Engineering,Dalian University of Technology,Dalian 116024,China2 Science and Technology on Power Beam Processes Laboratory,Beijing Aeronautical Manufacturing Technology Research Institute,Beijing 100024,China Beijing Aeronaut Mfg Technol Res Inst Sci & Technol Power Beam Proc Lab Beijing 100024 Peoples R China Dalian Univ Technol Sch Mat & Engn Dalian 116024 Peoples R China

tantalum nitride (tan) films were synthesized on bearing steels and Silicon wafers by Electron Cyclotron Resonance microwave plasma source enhanced DC sputtering and the effects of annealing at different temperature on mechanical properties of tan films were *** morphology and structure of the films were investigated by scanning electron microscope (SEM),X-ray diffraction (XRD) and X-ray Photoelectron Spectroscopy (XPS).The mechanical properties were evaluated using *** results showed that the hardness and modulus of tan film without annealing presented the maximal value,but which intensely dropped down with the increase of annealing temperature between 423K and 473K,meanwhile structure and combination in the films partially changed,but this phenomenon disappeared beyond the *** is found that annealing is a key factor for altering structure and mechanical properties of tan film.

关键词： magnetron sputtering tan film annealing

High-density oxygen-doped nano-tan enables robust polysulfide interconversion in Li−S batteries

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Chinese Chemical Letters 2023年第8期34卷 360-364页

作者： Shuang Yu Yonggui Zhang Shuo Yang Kuikui Xiao Dong Cai Huagui Nie Zhi Yang Key Laboratory of Carbon Materials of Zhejiang Province Wenzhou UniversityWenzhou 325035China College of Electrical and Electronic Engineering Wenzhou UniversityWenzhou 325035China

To tackle undesirable shuttle reaction and sluggish reaction kinetics in lithium–sulfur(Li–S)batteries,we develop a porous and high-density oxygen-doped tantalum nitride nanostructure(nano-tanO)as an efficient catalyst through delicate *** from well-defined interior and surface nanopore channels,the nano-tanO favors abundant sulfur storage,easy electrolyte infiltration and good electrons/Li+*** importantly,high-density O dopant in nano-tanO not only provides high conductivity,but also promotes polysulfide adsorption/conversion via Li–O chemical interactions and the generation of S3∗−radicals to activate additional evolution path from S8 to Li_(2)***,the nano-tanObased cathode exhibits excellent specific capacity and cyclability even under high sulfur loading *** interesting findings suggest the great potential of tantalum nitride and a high amount of anion doping engineering in manipulating intermediates and building high-performance Li−S rechargeable batteries.

关键词： Lithium−sulfur batteries Polysulfide conversion O doping tan High-density

Chia-Chen tan and genetics in modern China

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Protein & Cell 2019年第5期10卷 313-314页

作者： Lei Fu Zhejiang Normal University Jinhua 321004China

Chia-Chen tan(谈家桢,1909-2008)was one of the most important founders of genetics in modern China and made great effort to the inter nation alization of Chinese gen etics(Fig.1).Chia-Chen tan was born on September 15,1909 in Zhejiang *** studied in missionary middle school and public high school successively before being admitted to Soochow Un iversity without exami *** majored in biology in university and became interested in *** graduating in 1930,he entered YenChing University and learnt from Ju-Chi Li(李汝祺)(Fig.2)who was the first Chinese student to receive a doctor's degree from American famous geneticist Thomas Hunt Morgan and was the only genetics professor in YenChing University at that time(Zhang,2017).

关键词： Chia-Chen tan genetics modern