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Demonstration of a low‐complexity memory‐polynomial‐aided neural network equalizer for CAP visible‐light communication with superluminescent diode

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Opto-Electronic Advances 2020年第8期3卷 1-11页

作者： Fangchen Hu Jorge A.Holguin-Lerma Yuan Mao Peng Zou Chao Shen Tien Khee Ng Boon S.Ooi Nan Chi Key Laboratory for Information Science of Electromagnetic Waves(MoE) Fudan UniversityShanghai 200433China Photonics Laboratory King Abdullah University of Science and Technology(KAUST)Thuwal 23955-6900Saudi Arabia

Visible-light communication(VLC)stands as a promising component of the future communication network by providing high-capacity,low-latency,and high-security wireless *** diode(SLD)is proposed as a new light emitter in the VLC system due to its properties of droop-free emission,high optical power density,and low *** this paper,we analyze a VLC system based on SLD,demonstrating effective implementation of carrierless amplitude and phase modulation(CAP).We create a low-complexity memory-polynomial-aided neural network(MPANN)to replace the traditional finite impulse response(FIR)post-equalization filters of CAP,leading to significant mitigation of the linear and nonlinear distortion of the VLC *** MPANN shows a gain in Q factor of up to 2.7 dB higher than other equalizers,and more than four times lower complexity than a standard deep neural network(DNN),hence,the proposed MPANN opens a pathway for the next generation of robust and efficient neural network equalizers in *** experimentally demonstrate a proof-of-concept 2.95-Gbit/s transmission using MPANN-aided CAP with 16-quadrature amplitude modulation(16-QAM)through a 30-cm channel based on the 442-nm blue SLD emitter.

关键词： superluminescent diode visible-light communication neural network

A neutron radiation-hardened superluminescent diode

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Journal of Semiconductors 2012年第9期33卷 69-73页

作者：焦健谭满清赵妙常金龙 Institute of Semiconductors Chinese Academy of SciencesBeijing 100083China Institute of Microelectronics Chinese Academy of SciencesBeijing 100029China

We present a novel superluminescent diode （SLD） with high optical performances for hardened neutron irradiation. The degradation of the light output from the SLDs is caused by a reduction of the minority carrier lifetime resulting from displacement damage after high-energy neutron irradiation. The SLDs with a higher pre- irradiation light output will be less sensitive to radiation. We have selected an InGaAsP/InP multi-quantum well （MQW） as the active region structure for its performance, its high optical gain and minute active region. Graded- index separate-confinement-heterostructure （GRIN-SCH） has been applied for the waveguide structure. A specific absorbing region and anti-reflective coatings have been designed and optimized. Moreover, the radiation test results indicate that the SLD with an InGaAsP/InP MQW structure has better neutron hardening ability than the SLD with DH structures after a 6×10^13-1×10^14 n/cm^2 1 MeV neutron irradiation.

关键词： superluminescent diode neutron irradiation InGaAsP/InP multi-quantum well

Short-wavelength InAlGaAs/AlGaAs quantum dot superluminescent diodes

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Chinese Physics B 2011年第10期20卷 486-490页

作者：梁德春安琪金鹏李新坤魏恒吴巨王占国 Key Laboratory of Semiconductor Materials Science Institute of Semiconductors Chinese Academy of Sciences

This paper reports the fabrication of J-shaped bent-waveguide superluminescent diodes utilizing an InAl- GaAs/AlGaAs quantum dot active region. The emission spectrum of the device is centred at 884 nm with a full width at half maximum of 37 nm and an output power of 18 mW. By incorporating an Al composition into the quan- tum dot active region, short-wavelength superluminescent diode devices can be obtained. An intersection was found for the light power-injection current curves measured from the straight-waveguide facet and the bent-waveguide facet, respectively. The result is attributed to the conjunct effects of the gain and the additional loss of the bent waveguide. A numerical simulation is performed to verify the qualitative explanation. It is shown that bent waveguide loss is an important factor that affects the output power of J-shaped superluminescent diode devices.

关键词： InAiGaAs quantum dot superluminescent diode optical coherence tomography shortwavelength

InAs/GaAs submonolayer quantum-dot superluminescent diodes with active multimode interferometer configuration

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Chinese Physics B 2013年第4期22卷 523-526页

作者：李新坤金鹏梁德春吴巨王占国 Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low-dimensional Semiconductor Materials and Devices Institute of Semiconductors Chinese Academy of Sciences

With a chirped InAs/GaAs SML-QD （quantum dot） structure serving as the active region, the superluminescent diodes emitting at wavelength of around 970nm are fabricated. By using an active multimode interferometer configuration, these devices exhibit high continue-wave output powers from the narrow ridge waveguides. At continue-wave injection current of 800mA, an output power of 18.5mW, and the single Gaussian-like emission spectrum centered at 972nm with a full width at half maximum of 18nm are obtained.

关键词： quantum dot submonolayer self-assembled superluminescent diode

Active multi-mode-interferometer broadband superluminescent diodes

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Journal of Semiconductors 2016年第1期37卷 64-68页

作者：王飞飞金鹏吴巨吴艳华胡发杰王占国 Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low-Dimensional Semiconductor Materials and Devices Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China

We report a new quantum dot superluminescent diode with a new device structure. In this device, a multi- mode-interferometer configuration and a J-bend structure were monolithically integrated. Owing to the multi-mode- interferometer structure, the superluminescent diode exhibits 60% increase in output power and 43% reduction in the differential resistance compared with the uniform waveguide width superluminescent diode fabricated from the same wafer. Our device produces an emission spectrum as wide as 103.7 nm with an output power of 2.5 mW at 600 mA continue-wave injection current. This broadband emission spectrum makes the axial resolution of the optical coherence tomography system employing the superluminescent diode to 6 μm in theory, which is high enough for most tissue imaging.

关键词： quantum dot multi-mode-interferometer superluminescent diode

Stochastic Simulation of Emission Spectra and Classical Photon Statistics of Quantum Dot superluminescent diodes

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Journal of Modern Physics 2021年第1期12卷 22-34页

作者： Kai Niklas Hansmann Reinhold Walser Technische Universitä t Darmstadt Institut für Angewandte Physik Hochschulstra&szlig e 4a Darmstadt Germany

We present a stochastic procedure to investigate the correlation spectra of quantum dot superluminescent diodes. The classical electric field of a diode is formed by a polychromatic superposition of many independent stochastic oscillators. Assuming fields with individual carrier frequencies, Lorentzian linewidths and amplitudes we can form any relevant experimental spectrum using a least square fit. This is illustrated for Gaussian and Lorentzian spectra, Voigt profiles and box shapes. Eventually, the procedure is applied to an experimental spectrum of a quantum dot superluminescent diode which determines the first- and second-order temporal correlation functions of the emission. We find good agreement with the experimental data and a quantized treatment. Thus, a superposition of independent stochastic oscillators represents the first- and second-order correlation properties of broadband light emitted by quantum dot superluminescent diodes.

关键词： Stochastic Simulation Quantum Dot superluminescent diode

Broadband light emitting from multilayer-stacked InAs/GaAs quantum dots

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Chinese Physics B 2012年第11期21卷 408-411页

作者：刘宁金鹏王占国 Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low-Dimensional Semiconductor Materials and Devices Institute of SemiconductorsChinese Academy of Sciences Electricity Examination Department Patent Examination Cooperation Center of the Patent OfficeState Intellectual Property Office

We report the effect of the GaAs spacer layer thickness on the photoluminescence （PL） spectral bandwidth of InAs/GaAs self-assembled quantum dots （QDs）. A PL spectral bandwidth of 158 nm is achieved with a five-layer stack of InAs QDs which has a 11-nm thick GaAs spacer layer. We investigate the optical and the structurM properties of the multilayer-stacked InAs/GaAs QDs with different GaAs spacer layer thicknesses. The results show that the spacer thickness is a key parameter affecting the multi-stacked InAs/GaAs QDs for wide-spectrum emission.

关键词： quantum dots broudband spectrum superluminescent diode

Quantum cascade superluminescent light emitters with high power and compact structure

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Journal of Semiconductors 2020年第1期41卷 78-82页

作者： Jialin Sun Chuncai Hou Hongmei Chen Jinchuan Zhang Ning Zhuo Jiqiang Ning Changcheng Zheng Zhanguo Wang Fengqi Liu Ziyang Zhang School of Nano Technology and Nano Bionics University of Science and Technology of ChinaHefei 230026China Key Laboratory of Semiconductor Materials Science Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China The 718th Research Institute of China Shipbuilding Industry Corporation Handan 056027China Key Laboratory of Nanodevice and Applications Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesSuzhou 215123China Vacuum Interconnected Nanotech Workstation Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesSuzhou 215123China Division of Natural and Applied Sciences Duke Kunshan UniversityKunshan 215316China

Quantum cascade(QC)superluminescent light emitters(SLEs)have emerged as desirable broadband mid-infrared(MIR)light sources for growing number of applications in areas like medical imaging,gas sensing and national ***,it is challenging to obtain a practical high-power device due to the very low efficiency of spontaneous emission in the intersubband transitions in QC *** a design of^5μm SLEs is demonstrated with a two-phonon resonancebased QC active structure coupled with a compact combinatorial waveguide structure which comprises a short straight part adjacent to a tilted stripe and to a J-shaped *** as-fabricated SLEs achieve a high output power of 1.8 mW,exhibiting the potential to be integrated into array devices without taking up too much chip *** results may facilitate the realization of SLE arrays to attain larger output power and pave the pathway towards the practical applications of broadband MIR light sources.

关键词： quantum cascade superluminescent diode mid-wave infrared

AlGaAs high-power short-wavelength superluminescent integrated source

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Progress in Natural Science:Materials International 1998年第5期 52-56页

作者：赵永生,杜国同,韩伟华,付艳萍,李雪梅,宋俊峰,姜秀英,高鼎三,G.Devane,K.A.Stair,R.P.H.Chang Department of Electronic Engineering and State Key Laboratory on Integrated Optoelectronics Jilin University Changchun 130023 China Department of Electronic Engineering and State Key Laboratory on Integrated Optoelectronics Jilin University Changchun 130023 China Department of Electronic Engineering and State Key Laboratory on Integrated Optoelectronics Jilin University Changchun 130023 China Department of Electronic Engineering and State Key Laboratory on Integrated Optoelectronics Jilin University Changchun 130023 China Department of Electronic Engineering and State Key Laboratory on Integrated Optoelectronics Jilin University Changchun 130023 China Department of Electronic Engineering and State Key Laboratory on Integrated Optoelectronics Jilin University Changchun 130023 China Department of Electronic Engineering and State Key Laboratory on Integrated Optoelectronics Jilin University Changchun 130023 China Department of Electronic Engineering and State Key Laboratory on Integrated Optoelectronics Jilin University Changchun 130023 China Northwestern University Evanston IL 60208-3108 USA Northwestern University Evanston IL 60208-3108 USA Northwestern University Evanston IL 60208-3108 USA

In order to solve the problem in the conventional superluminescent diode (SLD), i. e. its output power is not high enough for some applications, a monolithic superluminescent source by integrating SLD with the tapered semiconductor amplifier has been designed and fabricated. An AlGaAs heterostructure wafer, gain guide of oxide stripe and a way of direct coupling were adopted. The experimental results show that the superluminescent output of SLD can be amplified for about 22 dB by the tapered optical amplifier. A maximum output power of 580 mW has been obtained under Dalsed condition.

关键词： superluminescent diode optical amplifier integrated source.