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Effect of substrate rotation speed on structure and properties of Al-doped ZnO thin films prepared by rf-sputtering

Transactions of Nonferrous Metals Society of China 2017年第9期27卷 2055-2062页

作者： E.A.MARTíN-TOVAR L.G.DAZA A.J.R.LóPEZ-ARREGUíN A.IRIBARREN R.CASTRO-RODRIGUEZ Departamento de Física Aplicada CINVESTAV-IPNUnidad Mérida Institut Supérieur de l’Aéronautique et de l’Espace (ISAE) Instituto de Ciencia y Tecnología de Materiales (IMRE) Universidad de La Habana

Al-doped ZnO(AZO)thin films were deposited on glass substrates by rf-sputtering at room *** effects of substrate rotation speed(ωS)on the morphological,structural,optical and electrical properties were *** transversal images show that the substrate rotation produces dense columnar structures which were found to be better defined under substrate *** images show that the surface particles of the samples formed under substrate rotation are smaller and denser than those of a stationary one,leading to smaller grain *** results show that all films have hexagonal wurtzite structure and preferred c-axis orientation with a tensile stress along the *** average optical transmittance was above90%in UV-Vis *** lowest resistivity value(8.5×10?3Ω·cm)was achieved atωS=0r/min,with a carrier concentration of1.8×1020cm?3,and a Hall mobility of4.19cm2/(V·s).For all other samples,the substrate rotation induced changes in the carrier concentration and Hall mobility which resulted in the increasing of electrical *** results indicate that the morphology,structure,optical and electrical properties of the AZO thin films are strongly affected by the substrate rotation speed.

关键词： AZO thin film rf-magnetron sputtering microstructure optoelectronic properties substrate rotation speed

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Effect of sputtering conditions on growth and properties of ZnO :Al films

引用

Transactions of Nonferrous Metals Society of China 2015年第5期25卷 1517-1524页

作者：石倩代明江林松盛侯惠君韦春贝胡芳广东省现代表面工程技术重点实验室广州510651 广州有色金属研究院新材料研究所广州510651

Al-doped zinc oxide（AZO） films were deposited on glass substrates by mid-frequency magnetron sputtering. The effects of substrate rotation speed and target-substrate distance on the electrical, optical properties and microstructure and crystal structures of the resulting films were investigated by scanning electron microscopy（SEM）, atomic force microscopy（AFM）, X-ray diffraction（XRD）, spectrophotometer and Hall-effect measurement system, respectively. XRD results show that all AZO films exhibit a strong preferred c-axis orientation. However, the crystallinity of films decreases with the increase of substrate rotation speed, accompanying with the unbalanced grains grows. For the films prepared at different target-substrate distances, the uniform microstructure and morphology are observed. The highest carrier concentration of 5.9×1020 cm-3 and Hall mobility of 13.1 cm^2/（V·s） are obtained at substrate rotation speed of 0 and target-substrate distance of 7 cm. The results indicate that the structure and performances of the AZO films are strongly affected by substrate rotation speed.

关键词： ZnO thin film mid-frequency magnetron sputtering substrate rotation speed target-substrate distance optoelectronic performance

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