Effect of substrate rotation speed on structure and properties of Al-doped ZnO thin films prepared by rf-sputtering
基底旋转速度对射频溅射法制备Al掺杂ZnO薄膜结构和性能的影响(英文)作者机构:Departamento de Física AplicadaCINVESTAV-IPNUnidad Mérida Institut Supérieur de l’Aéronautique et de l’Espace (ISAE) Instituto de Ciencia y Tecnología de Materiales (IMRE)Universidad de La Habana
出 版 物:《Transactions of Nonferrous Metals Society of China》 (中国有色金属学报(英文版))
年 卷 期:2017年第27卷第9期
页 面:2055-2062页
核心收录:
学科分类:081702[工学-化学工艺] 07[理学] 070205[理学-凝聚态物理] 08[工学] 0817[工学-化学工程与技术] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程(可授工学、理学学位)] 0702[理学-物理学]
主 题:AZO thin film rf-magnetron sputtering microstructure optoelectronic properties substrate rotation speed
摘 要:Al-doped ZnO(AZO)thin films were deposited on glass substrates by rf-sputtering at room *** effects of substrate rotation speed(ωS)on the morphological,structural,optical and electrical properties were *** transversal images show that the substrate rotation produces dense columnar structures which were found to be better defined under substrate *** images show that the surface particles of the samples formed under substrate rotation are smaller and denser than those of a stationary one,leading to smaller grain *** results show that all films have hexagonal wurtzite structure and preferred c-axis orientation with a tensile stress along the *** average optical transmittance was above90%in UV-Vis *** lowest resistivity value(8.5×10?3Ω·cm)was achieved atωS=0r/min,with a carrier concentration of1.8×1020cm?3,and a Hall mobility of4.19cm2/(V·s).For all other samples,the substrate rotation induced changes in the carrier concentration and Hall mobility which resulted in the increasing of electrical *** results indicate that the morphology,structure,optical and electrical properties of the AZO thin films are strongly affected by the substrate rotation speed.