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In Situ Controllable Growth of Cu_2SnS_3 Film as Low-Cost Counter Electrodes for Dye-Sensitized solar cells

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Acta Metallurgica Sinica(English Letters) 2015年第5期28卷 580-583页

作者： Wei Xu Xin Jiang Jian-Min Chen Rui-Qin Tan Wei-Jie Song Ningbo Institute of Material Technology and Engineering Chinese Academy of Sciences Ningbo Key Laboratory of Silicon and Organic Thin Film Optoelectronic Technologies State Key Laboratory of Solid Lubrication Lanzhou Institute of Chemical Physics Chinese Academy of Sciences Faculty of Information Science and Engineering Ningbo University

Morphology-controllable Cu2SnS3 thin films on solvothermal process and used in dye-sensitized solar cells as Mo-glass were prepared via a facile in situ one-step counter electrodes. The effects of different solvents on the morphology of films were investigated. DSC based on the porous net-like Cu2SnS3 thin film as counter electrodes showed a power conversion efficiency of 2.30%, which was improved to 3.35% after annealing.

关键词： Cu2SnS3 Thin films Counter electrodes solar cells Power conversion efficiency

A novel microwave absorption and dielectric spectrum detection technology in photoelectron dynamic study for solar cells

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Rare Metals 2006年第Z1期25卷 153-157页

作者： LI Xiaowei SUN Shuxu LAI Weidong ZHANG Rongxiang DAI Xiuhong JIANG Xiaoli College of Physics Science & Technology Hebei University Baoding 071002 China College of Physics Science & Technology Hebei University Baoding 071002 China College of Physics Science & Technology Hebei University Baoding 071002 China College of Physics Science & Technology Hebei University Baoding 071002 China College of Physics Science & Technology Hebei University Baoding 071002 China College of Physics Science & Technology Hebei University Baoding 071002 China

The photoelectron property is directly related to the light-energy conversion efficiency of solar cells. In this paper, the photoelectron dynamic of semiconductor was analyzed. The diffusion of electrons has influence on the dielectric function of the solar cell material. And the amplitude variance of the imaginary and real part of the dielectric function is in direct proportion to the dynamic process of free and shallow-trapped electrons. Based on the untouched detection technique, the method is present to detect the amplitude change of the microwave signal which is passing through the material whose dielectric function changes after exposure. A 35 GHz oscillator was used as a microwave source. The absorption and dispersion microwave signals, which contain the dynamic information of free and shallow-trapped electron signal, are split respectively with phase-sensitive instrument. The photoelectron character of n-type Si(100) thin film was investigated by the novel equipment, and the lifetime of different kinds of electrons with the resolution of 1 ns was obtained. The equipment can be directly used in the study of the optoelectronic conversion mechanism of solar cells.

关键词： dye sensitization solar cells microwave absorption dielectric spectrum

Realization of conformal doping on multicrystalline silicon solar cells and black silicon solar cells by plasma immersion ion implantation

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Chinese Physics B 2014年第11期23卷 661-665页

作者：沈泽南夏洋刘邦武刘金虎李超波李勇滔 Key Laboratory of Microelectronics Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences

Emitted multi-crystalline silicon and black silicon solar cells are conformal doped by ion implantation using the plasma immersion ion implantation （PⅢ） technique. The non-uniformity of emitter doping is lower than 5 %. The secondary ion mass spectrometer profile indicates that the PⅢ technique obtained 100-rim shallow emitter and the emitter depth could be impelled by furnace annealing to 220 nm and 330 nm at 850 ℃ with one and two hours, respectively. Furnace annealing at 850 ℃ could effectively electrically activate the dopants in the silicon. The efficiency of the black silicon solar cell is 14.84% higher than that of the mc-silicon solar cell due to more incident light being absorbed.

关键词： solar cells plasma immersion ion implantation conformal doping black silicon

Reduction of the phosphorus contamination for plasma deposition of p-i-n microcrystalline silicon solar cells in a single chamber

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Chinese Physics B 2010年第9期19卷 638-642页

作者：王光红张晓丹许盛之郑新霞魏长春孙建熊绍珍耿新华赵颖 Institute of Photo-electronic Thin Film Devices and Technology of Nankai University Key Laboratory of Photo-electronic Thin Film Devices and Technology of TianjinKey Laboratory of Opto-electronic Information Science and TechnologyMinistry of Education

This paper investigates several pretreatment techniques used to reduce the phosphorus contamination between solar cells. They include hydrogen plasma pretreatment, deposition of a p-type doped layer, i-a-Si：H or μc-Si：H covering layer between solar cells. Their effectiveness for the pretreatment is evaluated by means of phosphorus concentration in films, the dark conductivity of p-layer properties and cell performance.

关键词： phosphorus contamination single chamber microcrystalline silicon solar cells

Influence of Different Surface Modifications on the Photovoltaic Performance and Dark Current of Dye-Sensitized solar cells

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Plasma Science and Technology 2007年第5期9卷 556-559页

作者：徐炜炜戴松元胡林华张昌能肖尚峰罗向东景为平王孔嘉 Division of solar Energy Materials and Engineering Institute of Plasma PhysicsChinese Academy of SciencesHefei 230031China Jiangsu Provincial Key Lab of ASIC DesignNantong UniversityNantong 226007China Division of solar Energy Materials and Engineering Institute of Plasma PhysicsChinese Academy of SciencesHefei 230031China Jiangsu Provincial Key Lab of ASIC Design Nantong UniversityNantong 226007China

The TiO2 nanoporous film photoelectrode, as a crucial component of dye-sensitized solar cells, has been investigated. The photovoltaic properties and the dark current were studied by two surface modification methods. One was to apply a compact layer between the conductive glass substrate and nanoporous TiO2 film. Another was to produce TiO2 nanoparticles among the microstructure by TICl4 treatment. A suitable concentration and number of times for TICl4 treatment were found in our experiment. The dark current is suppressed by surface modifications, leading to a significant improvement in the solar cells performance. An excessive concentration of TICl4 will produce more surface states and introduce a larger dark current reversely. The dye is also regarded as a source of charge recombination in dark to some extent, due to an amount of surface protonations introduced by the interracial link in the conductive glass substrate/dye interface and dye/TiO2 interface.

关键词： surface modification, dark current, dye-sensitized solar cells

Preparation and characterization of Cd_(1-x)Zn_xS buffer layers for thin film solar cells

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Rare Metals 2013年第1期32卷 47-51页

作者： Tian-Wei Zhang Cheng-Jun Zhu Chao-Zheng Wang Jian Li Key Laboratory of Semiconductor Photovoltaic Technology of Inner Mongolia Autonomous Region School of Physical Science and Technology Inner Mongolia University

Cd1_xZnxS （x = 0, 0.1, 0.2, 0.3, 1.0） thin films have been grown successfully on soda-lime glass substrates by chemical bath deposition technique as a very promising buffer layer material for optoelectronic device applications. The composition, structural properties, surface morphol- ogy, and optical properties of Cd~_xZnxS thin films were characterized by energy dispersive analysis of X-ray tech- nique （EDAX）, X-ray diffraction （XRD）, scanning electron microscopy （SEM）, and UV-Vis spectrophotometer tech- niques, respectively. The annealed films were observed to possess the deficient sulfur composition. The results of XRD show that the Cdl_xZnxS （x = 0. l） thin film annealed at 450 ~C forms hexagonal （wurtzite） structure with lattice parameters a = 0.408814 nm, c ： 0.666059 nm, and its average grain size is 24.9902 nm. The diffraction peaks become strong with the increasing annealing temperatures. The surface of Cdl_~ZnxS （x = 0.1） thin film annealed at 450 ~C is uninterrupted and homogenous as compared to other temperatures. From optical properties, it is observed that the presence of small amount of Zn results in marked changes in the optical band gap of CdS. The band gaps of the Cdl_xZnxS thin films vary from 2.42 to 3.51 eV as composition varies from x = 0.0 to 1.0.

关键词： solar cells Buffer layers ChemicalCdl_xZnxS thin films bath deposition

Organic tandem solar cells with PCE over 12%

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Science China Chemistry 2017年第4期60卷 433-434页

作者： Fei Huang Institute of Polymer Optoelectronic Materials and Devices South China University of Technology Guangzhou 510641 China

In contrast to inorganic solar cells, organic solar cells （OSCs） show advantages such as low cost, light weight, and flexi- bility. In fact, the most attractive feature of OSCs is that they could be produced in large scale and at low cost by roll-to-roll printing, just like printing newspapers, which does not in- volve complicated and high-cost procedures that are required in the production of inorganic solar cells. It is this fascinat- ing feature that has drawn great attention on the OSC study during the past two decades.

关键词： solar cells

Precisely tuning Ge substitution for efficient solution-processed Cu_2ZnSn(S,Se)_4 solar cells

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Chinese Physics B 2018年第1期27卷 116-120页

作者：王新收寇东星周文辉周正基田庆文孟月娜武四新 The Key Laboratory for Special Functional Materials of MOE Collaborative Innovation Center of Nano Functional Materials and ApplicationsHenan University

The kesterite Cu2ZnSn（S,Se）4 （CZTSSe） solar cells have yielded a prospective conversion efficiency among all thin- film photovoltaic technology. However, its further development is still hindered by the lower open-circuit voltage （Voc）, and the non-ideal bandgap of the absorber is an important factor affecting this issue. The substitution of Sn with Ge provides a unique ability to engineer the bandgap of the absorber film. Herein, a simple precursor solution approach was successfully developed to fabricate Cu2Zn（SnyGel_y）（SxSe~ x）4 （CZTGSSe） solar cells. By precisely adjusting the Ge content in a small range, the Voc and Jsc are enhanced simultaneously. Benefitting from the optimized bandgap and the maintained spike structure and light absorption, the 10% Ge/（Ge＋Sn） content device with a bandgap of approximately 1.1 eV yields the highest efficiency of 9.36%. This further indicates that a precisely controlled Ge content could further improve the cell performance for efficient CZTGSSe solar cells.

关键词： Cu2ZnSn(S,Se)4 solar cells Ge substitution bandgap

Review of roll-to-roll fabrication techniques for colloidal quantum dot solar cells

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Journal of Electronic Science and Technology 2023年第1期21卷 1-25页

作者： Yin-Fen Ma You-Mei Wang Jia Wen Ao Li Xiao-Liang Li Mei Leng Yong-Biao Zhao Zheng-Hong Lu Key Laboratory of Yunnan Provincial Higher Education Institutions for Optoelectronics Device Engineering Department of PhysicsSchool of Physics and AstronomyYunnan UniversityKunming650091China International Joint Research Center for Optoelectronic and Engineering Research Yunnan UniversityKunming650091China Department of Materials Science and Engineering University of TorontoTorontoM5S 3E4Canada

Colloidal quantum dots(CQDs)are of great interest to photovoltaic(PV)technologies as they possess the benefits of solution-processability,size-tunability,and roll-to-roll manufacturability,as well as unique capabilities to harvest near-infrared(NIR)*** the last decade,lab-scale CQD solar cells have achieved rapid improvement in the power conversion efficiency(PCE)from~1%to 18%,which will potentially exceed 20%in the next few years and approach the performance of other PV technologies,such as perovskite solar cells and organic solar *** the meanwhile,CQD solar cells exhibit long lifetimes either under shelf storage or continuous operation,making them highly attractive to ***,in order to meet the industrial requirements,mass production techniques are necessary to scale up the fabrication of those lab devices into large-area PV modules,such as roll-to-toll *** paper reviews the recent developments of large-area CQD solar cells with a focus on various fabrication methods and their *** covers the progress of typical large-area coating techniques,including spray coating,blade coating,dip coating,and slot-die *** also discusses next steps and new strategies to accomplish the ultimate goal of the low-cost large-area fabrication of CQD solar cells and emphasizes how artificial intelligence or machine learning could facilitate the developments of CQD solar cell research.

关键词： Colloidal quantum dots(CQDs) Large-area fabrication Roll-to-roll solar cells