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Chinese Physics B 2016年第4期25卷 175-181页

作者：李莎石志国康哲余重秀王建萍 School of Computer and Communication Engineering University of Science and Technology Beijing (USTB ) Beijing 100083 China State Key Laboratory of Information Photonics and Optical Communications Beijing University of Posts and Telecommunications (BUPT) Beijing 100876 China

An all-optical analog-to-digital converter （ADC） based on the nonlinear effect in a silicon waveguide is a promising candidate for overcoming the limitation of electronic devices and is suitable for photonic integration. In this paper, a lumped time-delay compensation scheme with 2-bit quantization resolution is proposed. A strip silicon waveguide is designed and used to compensate for the entire time-delays of the optical pulses after a soliton self-frequency shift （SSFS） module within a wavelength range of 1550 nm-1580 nm. A dispersion coefficient as high as -19800 ps/（***） with ＋0.5 ps/（***） variation is predicted for the strip waveguide. The simulation results show that the maximum supportable sampling rate （MSSR） is 50.45 GSa/s with full width at half maximum （FWHM） variation less than 2.52 ps, along with the 2-bit effective- number-of-bit and Gray code output.

关键词： all-optical analog-to-digital conversion silicon waveguide soliton self-frequency shift time-delaycompensation

Simple technique to fabricate microscale and nanoscale silicon waveguide devices

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Frontiers of Optoelectronics 2009年第3期2卷 308-311页

作者： Yao CHEN Junbo FENG Zhiping ZHOU Christopher J.SUMMERS David S.CITRIN Jun YU Department of Electronic Science and Technology Huazhong University of Science and Technology Wuhan National Laboratory for Optoelectronics Huazhong University of Science and Technology State Key Laboratory on Advanced Optical Communication Systems and Networks Peking University School of Electrical and Computer Engineering Georgia Institute of Technology School of Materials Science and Engineering Georgia Institute of Technology Unité Mixte Internationale 2958 Georgia Tech-CNRS Georgia Tech Lorraine

Fabrication of microscale and nanoscale silicon waveguide devices requires patterning silicon, but until recently, exploitation of the technology has been restricted by the difficulty of forming ever-small features with minimum linewidth fluctuation. A technique was developed for fabricating such devices achieving vertical sidewall profile, smooth sidewall roughness of less than10 nm, and fine features of 40 nm. Subsequently, silicon microring resonator and silicon-grating coupler were realized using this technique.

关键词： nanofabrication silicon waveguide roughness microring resonator grating coupler

Nonlinear performances of dual-pump amplifiers in silicon waveguides

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Chinese Physics B 2012年第4期21卷 290-295页

作者：孟凡余重秀邓云逸苑金辉 State Key Laboratory of Information Photonics and Optical Communications(Beijing University of Post and Telecommunications) Beijing 100876China

The performances of a dual-pump parametric and Raman amplification process and the wavelength conversion in silicon waveguides are investigated. By setting the Raman contribution fraction f to be 0.043 in our analytical model, the amplification gain of the probe signal can be obtained to be over 10 dB. The pump transfer noise （PTN）, the quantum noise （QN）, and the total noise figure （TNF） are discussed, and the TNF has a constant value of about 4 dB in the gain bandwidth. An idler signal generated during the parametric amplification （PA） process can be used to realize the wavelength conversion in wavelength division multiplexing （WDM） systems. In addition, the pump signal parameters, the generated free carrier lifetime and effective mode area （EMA） of the waveguide are analysed for the optimization of signal gain and noise characteristics.

关键词： silicon waveguide parametric amplification stimulated Raman scattering noise figure wavelength conversion

Avalanche-enhanced photocurrents in pin silicon waveguides at 1550 nm wavelength

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Journal of Semiconductors 2013年第6期34卷 81-84页

作者：赵勇徐超江晓清葛辉良 Department of Information Science and Electronics Engineering Zhejiang University Hangzhou Applied Acoustics Research Institute

The photocurrent effect in pin silicon waveguides at 1550 nm wavelength is experimentally investigated. The photocurrent is mainly attributed to surface-state absorption,defect-state absorption and/or two-photon *** results show that the photocurrent is enhanced by the avalanche effect.A pin silicon waveguide with an intrinsic region width of 3.4μm and a length of 2000μm achieves a responsivity of 4.6 mA/W and an avalanche multiplication factor of about five.

关键词： photodetector silicon waveguide photocurrent avalanche effect

silicon-based on-chip diplexing/triplexing technologies and devices

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Science China(Information Sciences) 2018年第8期61卷 18-32页

作者： Yaocheng SHI Jingye CHEN Hongnan XU Centre for Optical and Electromagnetic Research State Key Laboratory of Modern Optical InstrumentationZhejiang University

Wavelength-division-multiplexing(WDM) transceiver filters are one of the most essential components for realizing the fiber-to-the-home(FTTH) networks. In recent years, silicon photonics have provided a very attractive platform to build ultra-compact photonic integrated devices with CMOS-compatible processes. In this review, we focus on the recent progresses on diplexers/triplexers based on multimode interference couplers(MMI), and directional couplers(DC). The polarization-insensitive devices are also discussed.

关键词： wavelength division multiplexer multimode interference coupler directional coupler fiber-tothe-home silicon waveguide

Efficient silicon integrated four-mode edge coupler for few-mode fiber coupling

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Chinese Optics Letters 2022年第1期20卷 54-59页

作者： Junbo Zhu Haiyang Huang Yingxuan Zhao Yang Li Zhen Sheng Fuwan Gan State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China University of Chinese Academy of Sciences Beijing 100049China School of Future Technology University of Chinese Academy of SciencesBeijing 100049China

Here,we designed a broadband,low loss,compact,and fabrication-tolerant silicon-based four-mode edge coupler,composed of a 1×3 adiabatic mode-evolution counter-taper splitter and a triple-tip inverse *** on mode conversion and power splitting,the proposed structure can simultaneously realize efficient mode coupling from TE_(0),TM_(0),TE_(1),and TM_(1) modes of multimode silicon waveguides to linearly polarized(LP),LP^(01,x),LP_(01,y),LP_(11a,x),and LP_(11a,y),modes in the few-mode *** the best of our knowledge,we proposed the first scheme of four LP modes coupling,which is fully compatible with standard fabrication *** 3D finite-difference time-domain simulation results show that the on-chip conversion losses of the four modes remain lower than 0.62 dB over the 200 nm wavelength range,and total coupling losses are 4.1 dB,5.1 dB,2.1 dB,and 2.9 dB for TE_(0)-to-LP_(01,x),TM_(0)-to-LP_(01,y),TE_(1)-to-LP_(11a,x),and TM_(1)-to-LP_(11a,y),*** fabrication tolerance and relaxed critical dimensions make the four-mode edge coupler compatible with standard fabrication process of commercial silicon photonic foundries.

关键词： multimode coupling CMOS compatibility silicon waveguide few-mode fiber

Asymmetrical Fabry-Perot cavity slot micro-ring resonator and its sensing characteristics

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Journal of Measurement Science and Instrumentation 2024年第3期15卷 292-301页

作者： CAO Qianqian LIU Chunjuan WU Xiaosuo SUN Xiaoli School of Electronic and Information Engineering Lanzhou Jiaotong UniversityLanzhou 730070China

To achieve high quality factor and high-sensitivity refractive index sensor,a slot micro-ring resonator(MRR)based on asymmetric Fabry-Perot(FP)cavity was *** structure consisted of a pair of elliptical holes to form an FP cavity and a microring *** two different optical modes generated by the micro-ring resonator were destructively interfered to form a Fano line shape,which improved the system sensitivity while obtaining a higher quality factor and extinction *** transmission principle of the structure was analyzed by the transfer matrix *** transmission spectrum and mode field distribution of the proposed structure were simulated by the finite difference time domain(FDTD)method,and the key structural parameters affecting the Fano line shape in the device were *** simulation results show that the quality factor of the device reached 22037.1,and the extinction ratio was 23.9 *** analyzing the refractive index sensing characteristics,the sensitivity of the structure was 354 nm·RIU−1,and the detection limit of the sensitivity was 2×10−4 ***,the proposed compact asymmetric FP cavity slot micro-ring resonator has obvious advantages in sensing applications owing to its excellent performance.

关键词： micro-ring resonator(MRR) Fabry-Perot(FP)cavity Fano resonance refractive index sensing integrated optics silicon waveguide