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Curved surface effect and emission on silicon nanostructures

Chinese Physics B 2013年第10期22卷 292-298页

作者：黄伟其尹君周年杰黄忠梅苗信建陈汉琼苏琴刘世荣秦朝建 Institute of Nanophotonic Physics Key Laboratory of Photoelectron Technology and ApplicationGuizhou University

The curved surface （CS） effect on nanosilicon plays a main role in the activation for emission and photonic manipulation. The CS effect breaks the symmetrical shape of nanosilicon on which some bonds can produce localized electron states in the band gap. The investigation in calculation and experiment demonstrates that the different curvatures can form the characteristic electron states for some special bonding on the nanosilicon surface, which are related to a series of peaks in photoluminecience （PL）, such as LN, LNO, Lo1, and Lo2 lines in PL spectra due to Si-N, Si-NO, Si=O, and Si-O-Si bonds on curved surface, respectively. Si-Yb bond on curved surface of Si nanostructures can provide the localized states in the band gap deeply and manipulate the emission wavelength into the window of optical communication by the CS effect, which is marked as the Lyb line of electroluminescence （EL） emission.

关键词： silicon nanostructures curved surface effect characteristic line localized states

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Characteristics of Disorder and Defect in Hydrogenated Amorphous silicon Nitride Thin Films Containing silicon Nanograins

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Chinese Journal of Aeronautics 2006年第B12期19卷 173-178页

作者： DING Wen-ge YU Wei ZHANG Jiang-yong HAN Li FU Guang-sheng College of Physics Science and Technology Hebei University Baoding 071002 China

The hydrogenated amorphous silicon nitride （SiNx） thin films embedded with nano-structural silicon were prepared and the micro- structures at the interface of silicon nano-grains/SiNx were identified by the optical absorption and Raman scattering measurements. Characterized by the exponential tail of optical absorption and the band-width of the Raman scattering TO mode, the disorder in the interface region increases with the gas flow ratio increasing. Besides, as reflected by the sub-gap absorption coefficients, the density of interface defect states decreases, which can be attributed to the structural mismatch in the interface region and also the changes of hydrogen content in the deposited films. Additional annealing treatment results in a significant increase of defects and degree of disorder, for which the hydrogen out-diffusion in the annealing process would be responsible.

关键词： silicon nanostructures disorder and defect role of hydrogen

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