Characteristics of Disorder and Defect in Hydrogenated Amorphous Silicon Nitride Thin Films Containing Silicon Nanograins

作     者：DING Wen-ge YU Wei ZHANG Jiang-yong HAN Li FU Guang-sheng 

作者机构：College of Physics Science and Technology Hebei University Baoding 071002 China 

出 版 物：《Chinese Journal of Aeronautics》 (中国航空学报（英文版）)

年 卷 期：2006年第19卷第B12期

页      面：173-178页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0702[理学-物理学] 

基　　金：Natural Foundation of Hebei province  China (GE2004000119) 

主　　题：silicon nanostructures disorder and defect role of hydrogen 

摘      要：The hydrogenated amorphous silicon nitride （SiNx） thin films embedded with nano-structural silicon were prepared and the micro- structures at the interface of silicon nano-grains/SiNx were identified by the optical absorption and Raman scattering measurements. Characterized by the exponential tail of optical absorption and the band-width of the Raman scattering TO mode, the disorder in the interface region increases with the gas flow ratio increasing. Besides, as reflected by the sub-gap absorption coefficients, the density of interface defect states decreases, which can be attributed to the structural mismatch in the interface region and also the changes of hydrogen content in the deposited films. Additional annealing treatment results in a significant increase of defects and degree of disorder, for which the hydrogen out-diffusion in the annealing process would be responsible.