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silicon pin photodiode applied to acquire high-frequency sampling XAFS spectra

Nuclear Science and Techniques 2022年第7期33卷 15-24页

作者： Yun-Peng Liu Lei Yao Bing-Jie Wang Jia-Jun Zhong Hao Wang Li-Xiong Qian Zhong-Jun Chen Guang Mo Xue-Qing Xing Wei-Fan Sheng Zhong-Hua Wu Beijing Synchrotron Radiation Facility Institute of High Energy PhysicsChinese Academy of SciencesBeijing100049China University of Chinese Academy of Sciences Chinese Academy of SciencesBeijing100049China

Experimental techniques based on SR facilities have emerged with the development of synchrotron radiation(SR)***,detector miniaturization has become significant for the development of SR experimental *** this study,the miniaturization of a detector was achieved by coupling a commercial silicon pin photodiode(SPPD)into a beamstop,aiming for it not only to acquire X-ray absorption fine structure(XAFS)spectra,but also to protect the subsequent two-dimensional detector from high-brilliance X-ray radiation damage in certain combination *** mini SPPD detector coupled to a beamstop was used as the rear detector in both the conventional sampling scheme and novel high-frequency(HF)sampling scheme to collect the transmission XAFS *** ion chambers were also used to collect the transmission XAFS spectra,which were used as the *** XAFS spectra were quantitatively analyzed and compared;the results demonstrated that the XAFS spectra collected by this SPPD in both the conventional sampling scheme and HF sampling scheme are *** study provides a new detector-selection scheme for the acquisition of the quick-scanning XAFS(QXAFS)and HF sampling XAFS *** SPPD detector presented in this study can partially meet the requirements of detector miniaturization.

关键词： silicon pin photodiodes Beamstop XAFS High frequency sampling

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Scalability of dark current in silicon pin photodiode

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Chinese Physics B 2018年第4期27卷 526-528页

作者： Ya-Jie Feng Chong Li Qiao-Li Liu Hua-Qiang Wang An-Qi Hu Xiao-Ying He Xia Guo School of Electronic Engineering State Key Laboratory of Information Photonics and Optical Communications Beijing University of Posts and Telecommunications Beijing Key Laboratory of Work Safety Intelligent Monitoring Beijing 100876 China Department of Information Beijing University of Technology Beijing 100124 China

The mechanism for electrical conduction is investigated by the dark temperature-dependent current–voltage characteristics of Si pin photodiodes with different photosensitive *** characteristic tunneling energy E（00） can be obtained to be 1.40 me V,1.53 me V,1.74 me V,1.87 me V,and 2.01 me V,respectively,for the photodiodes with L = 0.25 mm,0.5 mm,1 mm,1.5 mm,and 2 mm by fitting the ideality factor n versus temperature curves according to the tunneling-enhanced recombination *** trap-assisted tunneling-enhanced recombination in the i-layer plays an important role in our device,which is consistent with the experimental result that area-dependent leakage current is dominant with the side length larger than 1 mm of the photosensitive *** results reveal that the quality of the bulk material plays an important role in the electrical conduction mechanism of the devices with the side length larger than 1 mm of the photosensitive area.

关键词： silicon pin photodiodes dark current tunneling enhanced

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