Scalability of dark current in silicon PIN photodiode

作     者：Ya-Jie Feng Chong Li Qiao-Li Liu Hua-Qiang Wang An-Qi Hu Xiao-Ying He Xia Guo 丰亚洁;李冲;刘巧莉;王华强;胡安琪;何晓颖;郭霞

作者机构：School of Electronic Engineering State Key Laboratory of Information Photonics and Optical Communications Beijing University of Posts and Telecommunications Beijing Key Laboratory of Work Safety Intelligent Monitoring Beijing 100876 China Department of Information Beijing University of Technology Beijing 100124 China 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2018年第27卷第4期

页      面：526-528页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：Project supported by the National Key Research and Development Program of China(Grant No.2017YFF0104801) the National Natural Science Foundation of China(Grant Nos.61335004,61675046,and 61505003) 

主　　题：silicon PIN photodiodes dark current tunneling enhanced 

摘      要：The mechanism for electrical conduction is investigated by the dark temperature-dependent current–voltage characteristics of Si PIN photodiodes with different photosensitive *** characteristic tunneling energy E（00） can be obtained to be 1.40 me V,1.53 me V,1.74 me V,1.87 me V,and 2.01 me V,respectively,for the photodiodes with L = 0.25 mm,0.5 mm,1 mm,1.5 mm,and 2 mm by fitting the ideality factor n versus temperature curves according to the tunneling-enhanced recombination *** trap-assisted tunneling-enhanced recombination in the i-layer plays an important role in our device,which is consistent with the experimental result that area-dependent leakage current is dominant with the side length larger than 1 mm of the photosensitive *** results reveal that the quality of the bulk material plays an important role in the electrical conduction mechanism of the devices with the side length larger than 1 mm of the photosensitive area.