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Linewidth of semiconductor-Optical Fiber Ring External Cavity laser with Tunable Optical Fiber F-P Cavity

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Chinese Journal of lasers 1998年第5期 7-11页

作者： YUAN Zongheng LIU Yongzhi (Department of Optoelectronic Tecnology, University of Electronic Science and Technology of China, Chengdu 610054, China) Received Aug. 7, 1997 Revised manuscript received Nov. 17, 1997

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关键词： semiconductor laser linewidth optical fiber F P cavity

Synchronization and bidirectional communication without delay line using strong mutually coupled semiconductor lasers

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Chinese Physics B 2010年第7期19卷 167-171页

作者：李光辉王安帮冯野汪洋 Physics Department College of ScienceTaiyuan University of Technology

This paper numerically demonstrates synchronization and bidirectional communication without delay line by using two semiconductor lasers with strong mutual injection in a face-to-face configuration. These results show that both of the two lasers＇ outputs synchronize with their input chaotic carriers. In addition, simulations demonstrate that this kind of synchronization can be used to realize bidirectional communications without delay line. Further studies indicate that within a small deviation in message amplitudes of two sides （±6%）, the message can be extracted with signal-noise-ratio more than 10 dB; and the signal-noise-ratio is extremely sensitive to the message rates mismatch of two sides, which may be used as a key of bidirectional communication.

关键词： synchronization bidirectional communication without delay line semiconductor laser

Graded doping low internal loss 1060-nm InGaAs/AlGaAs quantum well semiconductor lasers

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Chinese Physics B 2015年第6期24卷 374-377页

作者：谭少阳翟腾张瑞康陆丹王圩吉晨 Key Laboratory of semiconductors Materials Institute of SemiconductorsChinese Academy of Sciences

Internal loss is a key internal parameter for high power 1060-nm InGaAs/A1GaAs semiconductor laser. In this paper, we discuss the origin of internal loss of 1060-nm InGaAs/GaAs quantum welt （QW） AIGaAs separate confinement het- erostructure semiconductor laser, and the method to reduce internal loss. By light doping the n-cladding layer, and stepwise doping the p-cladding layer combined with the expanded waveguide layer, a broad area laser with internal loss of 1/cm is designed and fabricated. Ridge waveguide laser with an output power of 350 mW is obtained. The threshold current and slope efficiency near the threshold current are 20 mA and 0.8 W/A, respectively.

关键词： internal loss free carrier absorption semiconductor laser

Simultaneous unidirectional and bidirectional chaos-based optical communication using hybrid coupling semiconductor lasers

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Science China(Information Sciences) 2014年第1期57卷 280-290页

作者： JIANG Ning PAN Wei LUO Bin YAN LianShan XIANG ShuiYing Center for Information Photonics and Communications School of Information Science and TechnologySouthwest Jiaotong University

A simultaneous unidirectional and bidirectional chaos-based optical communication scheme based on a hybrid coupling semiconductor laser system that consists of one center semiconductor laser(CSL)and multiple side semiconductor lasers(SSLs)is proposed *** this scheme,the SSLs oriented in a linear chain mutually couple with the adjacent SSLs and they are subjected to identical unidirectional injections from the CSL which is a chaotic external cavity semiconductor *** theoretically analyze the conditions for diferent types of chaos synchronization based on the symmetry operation mechanism and injection-locking mechanism,and numerically investigate the influences of operation parameters,parameter mismatch robustness,chaos pass filtering efects and communication performance of the hybrid coupling semiconductor laser *** simulation results demonstrate that with proper selection of the unidirectional and mutual coupling conditions,the SSLs can synchronize with each other isochronally and simultaneously synchronize to the CSL completely or laggardly,which enables the proposed system to achieve a unidirectional broadcasting communication from the CSL to the SSLs and a bidirectional communication among the SSLs *** proposed scheme is beneficial to the implementation of optical chaos communication networks.

关键词： semiconductor laser optical communication chaos synchronization chaos communication net-works hybrid coupling

Waveguide external cavity narrow linewidth semiconductor lasers

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Journal of semiconductors 2021年第4期42卷 90-97页

作者： Chanchan Luo Ruiying Zhang Bocang Qiu Wei Wang School of Nano-Tech and Nano-Bionics University of Science and Technology of ChinaHefei 230026China Advanced Materials Division Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesSuzhou 215123China Institute of Atomic and Molecular Science Shaanxi University of Science and TechnologyXi’an 710021China The Key Laboratory of semiconductor Materials Science Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Division of Nanomaterials Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesNanchang 330200China

Narrow linewidth light source is a prerequisite for high-performance coherent optical communication and ***-based external cavity narrow linewidth semiconductor lasers(WEC-NLSLs)have become a competitive and attractive candidate for many coherent applications due to their small size,volume,low energy consumption,low cost and the ability to integrate with other optical *** this paper,we present an overview of WEC-NLSLs from their required technologies to the state-of-the-art ***,we highlight the common problems occurring to current WEC-NLSLs and show the possible approaches to resolving the ***,we present the possible development directions for the next phase and hope this review will be beneficial to the advancements of WEC-NLSLs.

关键词： semiconductor laser narrow linewidth waveguide external cavity

Lateral characteristics improvements of DBR laser diode with tapered Bragg grating

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Chinese Physics B 2022年第9期31卷 307-312页

作者：王琦琦徐莉范杰王海珠马晓辉 State Key Laboratory of High-Power laser Diodes Changchun University of Science and TechnologyChangchun 130022China

Broad area semiconductor laser(BAL)has poor lateral beam quality due to lateral mode competition,which limits its application as a high-power optical *** this work,the distributed Bragg reflector laser diode with tapered grating(TDBR-LD)is *** changing the lateral width,the tapered grating increases the loss of high-order lateral modes,thus improving the lateral characteristics of the laser *** measuring results show that the TDBR-LD can achieve a single-lobe output under 0.9 *** contrast to the straight distributed Bragg reflector laser diode(SDBR-LD),the lateral far field divergence of TDBR-LD is measured to be 5.23°at 1 A,representing a 17%*** linewidth of TDBR-LD is 0.4 nm at 0.2 A,which is reduced by nearly 43%in comparison with that of ***,both of the devices have a maximum output power value of approximate 470 mW.

关键词： tapered Bragg grating ateral beam semiconductor laser

Advances in wide-tuning and narrow-linewidth external-cavity diode lasers

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Science China(Information Sciences) 2022年第8期65卷 5-22页

作者： Qiang CUI Yuxin LEI Yongyi CHEN Cheng QIU Ye WANG Dexiao ZHANG Lutai FAN Yue SONG Peng JIA Lei LIANG Yubing WANG Li QIN Yongqiang NING Lijun WANG State Key Laboratory of Luminescence and Applications Changchun Institute of OpticsFine Mechanics and PhysicsChinese Academy of Sciences Daheng College University of Chinese Academy of Sciences School of Opto-Electronic Engineering Changchun University of Science and Technology Jiguang semiconductor Technology Co. Ltd.

The external-cavity diode laser is advantageous in terms of low noise, high side-mode suppression ratio, high temperature stability, simple structure, and low cost, which has been the preferred scheme to realize wide-tuning and narrow-linewidth characteristics. Thus, it has been widely used in optical communication, lidar, environmental monitoring, spectral analysis, optical coherence tomography, and other frontier fields. Herein, we introduce the technical scheme and review the development status of wide-tuning and narrow-linewidth external-cavity diode lasers in detail. Primarily, the structure, working principles, and performance characteristics of external-cavity diode lasers are deeply analyzed according to different *** structural characteristics, key technologies, optical performance and application fields of state-of-theart studies in recent years are discussed. Finally, the challenges and potential development prospects of wide-tuning and narrow-linewidth external-cavity diode lasers are analyzed and discussed.

关键词： wide tuning narrow linewidth external-cavity diode laser semiconductor laser Littrow Littman

Experimental　Study　on　Single　Frequency　semiconductor　lasers　with　Fiber　Bragg　Reflector　External　Cavity

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Chinese Journal of lasers 1996年第6期B5卷 501-505页

作者： AN Honglin LIN Xiangzhi YAN Hong CUI Xiaoming LIU Hongdu (Physics Department and National Key Lab. of Mesoscopic Physics,Beijing University, Beijing 100871, China) Beijing Univ Beijing China

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关键词： fiber Bragg reflector semiconductor laser external cavity

Parallel generation of low-correlation wideband complex chaotic signals using CW laser and external-cavity laser with self-phase-modulated injection

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Opto-Electronic Advances 2022年第5期5卷 49-56页

作者： Anke Zhao Ning Jiang Jiafa Peng Shiqin Liu Yiqun Zhang Kun Qiu School of Information and Communication Engineering University of Electronic Science and Technology of ChinaChengdu 611731China.

A novel scheme for generating optical chaos is proposed and experimentally demonstrated,which supports to simultaneously produce two low-correlation chaotic signals with wideband spectrum and suppressed time-delay-signature(TDS).In the proposed scheme,we use the output of an external-cavity semiconductor laser(ECSL)as the driving signal of a phase modulator to modulate the output of a CW *** the phase-modulated continuous-wave(CW)light is split into two parts,one is injected back into the ECSL that outputs one chaotic signal,while the other part is passed through a dispersion module for generating another chaotic signal *** experimental results prove that the proposed scheme has three ***,it can improve the bandwidth of ECSL-based chaos by several times,and simultaneously generate another wideband flat-spectrum chaotic ***,the undesired TDS characteristics of the simultaneously-generated chaotic signals can be efficiently suppressed to an indistinguishable level within a wide parameter range,as such the complexities of the chaotic signals are considerably ***,the correlation coefficient between these two simultaneously-generated chaotic signals is smaller than *** proposed scheme provides an attractive solution for parallel multiple chaos generation,and shows great potential for multiple channel chaos communications and multiple random bit generations.

关键词： optical chaos optical feedback semiconductor laser electro-optic phase modulation