Lateral characteristics improvements of DBR laser diode with tapered Bragg grating

作     者：Qi-Qi Wang Li Xu Jie Fan Hai-Zhu Wang Xiao-Hui Ma 王琦琦;徐莉;范杰;王海珠;马晓辉

作者机构：State Key Laboratory of High-Power Laser DiodesChangchun University of Science and TechnologyChangchun 130022China 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2022年第31卷第9期

页      面：307-312页

核心收录：

学科分类：080901[工学-物理电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080401[工学-精密仪器及机械] 0804[工学-仪器科学与技术] 0803[工学-光学工程] 

基　　金：Project supported by theScienceand Technology Development Plan of Jilin Province China(Grant Nos.20210201030GX and 20210201089GX) 

主　　题：tapered Bragg grating ateral beam semiconductor laser 

摘      要：Broad area semiconductor laser(BAL)has poor lateral beam quality due to lateral mode competition,which limits its application as a high-power optical *** this work,the distributed Bragg reflector laser diode with tapered grating(TDBR-LD)is *** changing the lateral width,the tapered grating increases the loss of high-order lateral modes,thus improving the lateral characteristics of the laser *** measuring results show that the TDBR-LD can achieve a single-lobe output under 0.9 *** contrast to the straight distributed Bragg reflector laser diode(SDBR-LD),the lateral far field divergence of TDBR-LD is measured to be 5.23°at 1 A,representing a 17%*** linewidth of TDBR-LD is 0.4 nm at 0.2 A,which is reduced by nearly 43%in comparison with that of ***,both of the devices have a maximum output power value of approximate 470 mW.