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Tuning the inhomogeneous charge transport in ZnO interfaces for ultrahigh on/off ratio top-gated field-effect-transistor arrays

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Nano Research 2020年第11期13卷 3033-3040页

作者： Thanh Luan Phan Dinh Loc Duong Tuan Khanh Chau Sidi Fan Won Tae Kang Thi Suong Le Hyun Yong Song Linfeng Sun Van Tu Vu Min Ji Lee Quoc An Vu Young Hee Lee Woo Jong Yu Department of Electrical and Computer Engineering Sungkyunkwan UniversitySuwon16419Republic of Korea Center for Integrated Nanostructure Physics(CINAP) Institute for Basic Science(IBS)Suwon16419Republic of Korea Department of Energy Science Sungkyunkwan UniversitySuwon16419Republic of Korea Department of Physics Sungkyunkwan UniversitySuwon16419Republic of Korea

The interface between oxide/oxide layers shows an inhomogeneous charge transport behavior,which reveals a high conductivity owing to *** typical example is the hetero-interface between ZnO film and other wide band gap oxides(e.g.,Al_(2)O_(3),TiO_(2),and HfO_(2)).It is thus quite evident that the ZnO/other oxides hetero-interface contains high density electron carriers effectively screening the gate-induced electric ***,an extremely weak gate modulation in ZnO film was showed,resulting in very low on/off ratio of 1.69 in top-gate field-effect-transistor(TG-FET)***,to extend the usage of ZnO TG-FET is not quite possible toward further practical ***,we clarified the correlation of inhomogeneous region in oxide/oxide hetero-junction by systematically *** work suggests that a self-assembly of molecules(SAM)buffer layer is suitable for tuning the inhomogeneous charge transport in ZnO film,which not only reduces the interface trap density,but also effectively enhances the gate electric field modulation at the *** further report the robust fabrication of TG-FET arrays based on ZnO thin film,using an ultra-thin alkylphosphonic acid molecule monolayer as buffer *** device demonstrates a pronounced ultrahigh on/off ratio of≥10^(8),which is 8-order of magnitude higher than that of a device without buffer *** the highly reliable arrays,our device exhibits a high yield of over 93%with an average on/off ratio of^10^(7) across the entire wafer scale,mobility(18.5 cm^(2)/(V·s)),an extended bias-stressing(~2,000 s)and long-stability(~150 days)under ambient conditions.

关键词： zinc oxides thin-film field-effect-transistor self-assembly molecule inhomogeneous charge transport interface engineering

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