Tuning the inhomogeneous charge transport in ZnO interfaces for ultrahigh on/off ratio top-gated field-effect-transistor arrays
作者机构：Department of Electrical and Computer EngineeringSungkyunkwan UniversitySuwon16419Republic of Korea Center for Integrated Nanostructure Physics(CINAP)Institute for Basic Science(IBS)Suwon16419Republic of Korea Department of Energy ScienceSungkyunkwan UniversitySuwon16419Republic of Korea Department of PhysicsSungkyunkwan UniversitySuwon16419Republic of Korea
出 版 物：《Nano Research》 (纳米研究（英文版）)
年 卷 期：2020年第13卷第11期
页 面：3033-3040页
核心收录：
学科分类：080903[工学-微电子学与固体电子学] 0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0702[理学-物理学]
基 金：supported by the National Research Foundation of Korea(NRF)grant funded by the Korea government(MSIT)(No.NRF-2018R1A2B2008069) Multi-Ministry Collaborative R&D Program through the National Research Foundation of Korea,funded by KNPA,MSIT,MOTIE,ME,and NFA(No.2017M3D9A1073539) supported by the Bio&Medical Technology Development Program of the National Research Foundation(NRF)funded by the Ministry of Science&ICT(No.NRF-2020M3A9E4039241) support from the Institute for Basic Science(No.IBS-R011-D1)
主 题：zinc oxides thin-film field-effect-transistor self-assembly molecule inhomogeneous charge transport interface engineering
摘 要：The interface between oxide/oxide layers shows an inhomogeneous charge transport behavior,which reveals a high conductivity owing to *** typical example is the hetero-interface between ZnO film and other wide band gap oxides(e.g.,Al_(2)O_(3),TiO_(2),and HfO_(2)).It is thus quite evident that the ZnO/other oxides hetero-interface contains high density electron carriers effectively screening the gate-induced electric ***,an extremely weak gate modulation in ZnO film was showed,resulting in very low on/off ratio of 1.69 in top-gate field-effect-transistor(TG-FET)***,to extend the usage of ZnO TG-FET is not quite possible toward further practical ***,we clarified the correlation of inhomogeneous region in oxide/oxide hetero-junction by systematically *** work suggests that a self-assembly of molecules(SAM)buffer layer is suitable for tuning the inhomogeneous charge transport in ZnO film,which not only reduces the interface trap density,but also effectively enhances the gate electric field modulation at the *** further report the robust fabrication of TG-FET arrays based on ZnO thin film,using an ultra-thin alkylphosphonic acid molecule monolayer as buffer *** device demonstrates a pronounced ultrahigh on/off ratio of≥10^(8),which is 8-order of magnitude higher than that of a device without buffer *** the highly reliable arrays,our device exhibits a high yield of over 93%with an average on/off ratio of^10^(7) across the entire wafer scale,mobility(18.5 cm^(2)/(V·s)),an extended bias-stressing(~2,000 s)and long-stability(~150 days)under ambient conditions.
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