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Microstructure and properties of indium tin oxide thin films deposited by rf-magnetron sputtering

Rare Metals 2006年第4期25卷 359-364页

作者： LI Shitao QIAO Xueliang CHEN Jianguo JIA Fang WU Changle State Key Laboratory of Plastic Forming Simulation and Die ＆ Mould Technology Huazhong University of Science and Technology Wuhan 430074China

Tin-doped indium oxide （ITO） thin films were prepared using conventional radio frequency （rf） planar magnetron sputtering equipped with IR irradiation using a ceramic target of In2O3/SnO2 with a mass ratio of 1：1 at various IR irradiation temperatures T1 （from room temperature to 400℃）. The refractive index, deposited ratio, and resistivity are functions of the sputtering Ar gas pressure. The microstructure of ITO thin films is related to IR T1, the crystalline seeds appear at T1= 300℃, and the films are amorphous at the temperature ranging from 27℃ to 400℃. AFM investigation shows that the roughness value of peak-valley of ITO thin film （Rp-v） and the surface microstructure of rio thin films have a close relation with T1. The IR irradiation results in a widening value of band-gap energy due to Burstein-Moss effect and the maximum visible transmittance shifts toward a shorter wavelength along with a decrease in the film＇s refractive index. The plasma wavelength and the refractive index of ITO thin films are relative to the T1. XPS investigation shows that the photoelectrolytic properties can be deteriorated by the sub-oxides. The deterioration can be decreased by increasing the oxygen flow rote （fo2）, and the mole ratio of Sn/In in the samples reduces with an increase info2.

关键词： indium-tin oxide (ITO) photoelectrolytic properties rf-magnetron sputtering IR irradiation temperature microstructure refractive index

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Effect of grain size on ferroelectric and dielectric properties of Bi_(3.25)La_(0.75)Ti_(3)O_(12) thin films prepared by rf-magnetron sputtering

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Journal of Advanced Dielectrics 2023年第5期13卷 55-60页

作者： Shuai Ma Wei Li Jigong Hao Yuying Chen Zhijun Xu School of Medicine Liaocheng UniversityLiaocheng 252059P.R.China Beijing Key Laboratory of Digital Stomatology Beijing 100081P.R.China School of Materials Science and Engineering Liaocheng University Liaocheng 252059P.R.China School of Environment and Materials Engineering Yantai University Yantai 264005P.R.China

Bi_(3.25)La_(0.75)Ti_(3)O_(12)(BLT)thin films are promising materials used in non-volatile *** this work,BLT films were deposited on Pt(111)/Ti/SiO_(2)/Si substrates by rf-magnetron sputtering method followed by annealing *** microstructures of BLT thin films were investigated via X-ray diffraction(XRD),scanning electron microscopy(SEM)and atomic force microscopy(AFM).With the increase in annealing temperature,the grain size increased significantly and the preferred crystalline orientation changed.A well-saturated hysteresis loop with a superior remnant polarization of 15.4μC/cm^(2) was obtained for BLT thin films annealed at 700°*** results show that the dielectric constant decreased with the increase in grain sizes.

关键词： Thin films rf-magnetron sputtering ferroelectric properties dielectric properties

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Effect of substrate rotation speed on structure and properties of Al-doped ZnO thin films prepared by rf-sputtering

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Transactions of Nonferrous Metals Society of China 2017年第9期27卷 2055-2062页

作者： E.A.MARTíN-TOVAR L.G.DAZA A.J.R.LóPEZ-ARREGUíN A.IRIBARREN R.CASTRO-RODRIGUEZ Departamento de Física Aplicada CINVESTAV-IPNUnidad Mérida Institut Supérieur de l’Aéronautique et de l’Espace (ISAE) Instituto de Ciencia y Tecnología de Materiales (IMRE) Universidad de La Habana

Al-doped ZnO(AZO)thin films were deposited on glass substrates by rf-sputtering at room *** effects of substrate rotation speed(ωS)on the morphological,structural,optical and electrical properties were *** transversal images show that the substrate rotation produces dense columnar structures which were found to be better defined under substrate *** images show that the surface particles of the samples formed under substrate rotation are smaller and denser than those of a stationary one,leading to smaller grain *** results show that all films have hexagonal wurtzite structure and preferred c-axis orientation with a tensile stress along the *** average optical transmittance was above90%in UV-Vis *** lowest resistivity value(8.5×10?3Ω·cm)was achieved atωS=0r/min,with a carrier concentration of1.8×1020cm?3,and a Hall mobility of4.19cm2/(V·s).For all other samples,the substrate rotation induced changes in the carrier concentration and Hall mobility which resulted in the increasing of electrical *** results indicate that the morphology,structure,optical and electrical properties of the AZO thin films are strongly affected by the substrate rotation speed.

关键词： AZO thin film rf-magnetron sputtering microstructure optoelectronic properties substrate rotation speed

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rf magnetron-sputtered coatings deposited from biphasic calcium phosphate targets for biomedical implant applications

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Bioactive Materials 2017年第3期2卷 170-176页

作者： K.A.Prosolov K.S.Popova O.A.Belyavskaya J.V.Rau K.A.Gross A.Ubelis Yu.P.Sharkeev Institute of Strength Physics and Materials Science of SB RAS TomskAcademicheskii pr.2/4634055Russia National Research Tomsk Polytechnic University TomskLenina pr.30634050Russia Istituto di Struttura della Materia Consiglio Nazionale delle Ricerche(ISM-CNR)via del Fosso del Cavaliere 10000133RomaItaly Faculty of Materials Science and Applied Chemistry Riga Technical UniversityAzenes Str.14/24RigaLV-1048Latvia University of Latvia 19Raina blvd.RigaLV-1586Latvia

Bioactive calcium phosphate coatings were deposited by radio-frequency magnetron sputtering from biphasic targets of hydroxyapatite and tricalcium phosphate,sintered at different mass%*** to Raman scattering and X-ray diffraction data,the deposited hydroxyapatite coatings have a disordered ***-temperature treatment of the coatings in air leads to a transformation of the quasi-amorphous structure into a crystalline one.A correlation has been observed between the increase in the Ca content in the coatings and a subsequent decrease in Ca in the biphasic targets after a series of deposition *** was proposed that the addition of tricalcium phosphate to the targets would led to a finer coating's surface topography with the average size of 78 nm for the structural elements.

关键词： rf-magnetron sputtering Biphasic hydroxyapatite-tricalcium phosphate targets Thin hydroxyapatite coatings Plasma coatings Biocompatibility

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Electrical and Structural Properties of Radio Frequency （rf） Sputtered ZnO Thin Film at Low Substrate Temperature

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Journal of Electrical Engineering 2014年第1期2卷 12-19页

作者： Sanusi Abdullahi Musa Momoh Kasim Uthman Isah Department of Physics Faculty of Science Usmanu Danfodiyo University Sokoto 840241 Nigeria Department of physics Faculty of Science Federal University of Technology Minna 920211 Nigeria

Transparent conducting ZnO （zinc oxide） thin films with an average thickness of 130 nm were deposited on glass substrates at substrate temperature of 373 K by rf （radio frequency） sputtering and annealed in nitrogen atmosphere （samples S1, S2 and S3） and in open air （samples S5, S6 and S7） at 423 K, 573 K and 723 K for 60 minutes. S4 is reserved as the reference or the as-deposited sample （sample that has not been annealed）. The electrical and structural properties of the films were investigated using four-point probe, XRD （X-ray diffraction） and SEM （scanning electron microscopy）. The as-deposited sample （S4 or sample that has not been annealed） was found to have a resistivity of 11.0 ×10^-4 Ω·cm, while that of the annealed samples lies between 6.0 × 10^-4 Ω·cm and 3.5 × 10^-4 Ω·cm. The XRD analysis of the annealed films shows that they are crystalline with preferential orientation of （002） plane. Other data analyzed from the samples includes the grain size （1.5059 -1.8898 μm）, strain （1.77%-0.11%）, residual stress （4.13-0.26 GPa） and the dislocation density （0.4409/m2-0.2800/m2）.

关键词： ZnO electrical resistance rf-magnetron sputtering XRD

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射频磁控溅射和电子束蒸发制备Al掺杂ZnO薄膜

射频磁控溅射和电子束蒸发制备Al掺杂ZnO薄膜

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2009年西部光子学学术会议

作者：高立张建民陕西师范大学物理学与信息技术学院

ZnO薄膜以它较宽的禁带宽度(3.3eV)和较高的激子束缚能(60meV)引起国内外广泛关注,它还具有经济、安全、无毒性和自然储量大的优势.ZnO薄膜的导电性是由它的本征缺陷氧空位和间隙锌原子控制的,实践中为了提高它的导电性,通常采用掺杂的... 详细信息

ZnO薄膜以它较宽的禁带宽度(3.3eV)和较高的激子束缚能(60meV)引起国内外广泛关注,它还具有经济、安全、无毒性和自然储量大的优势.ZnO薄膜的导电性是由它的本征缺陷氧空位和间隙锌原子控制的,实践中为了提高它的导电性,通常采用掺杂的方法.为了深入研究Al掺杂ZnO(AZO)薄膜在微观结构上和光学、电学性能,利用射频磁控溅射(rf-MS)和电子束蒸发沉积(E-BE)方法分别制备了2wt%Al掺杂AZO薄膜,500℃温度下退火2小时后,利用X射线衍射仪等仪器对它们的物理进行了比较.结果显示,采用两种方法制备的AZO薄膜经过退火以后,(002)峰值增强,rf-MS制备的AZO薄膜只有(002)这一个强度很大的峰,说明AZO薄膜沿c轴优先生长,结晶良好;而E-BE制备的AZO薄膜除了(002)峰以外,还有(100)、(101)两个属于六方纤锌矿的较弱的峰,表明这种AZO薄膜是多晶体,利用rf-MS比利用E-BE制备的ZnO薄膜的表面颗粒度小、晶粒的均匀性好,利用谢乐(Scherrer)公式计算出利用rf-MS制备的AZO薄膜经过500℃退火以后的晶粒尺寸为30nm,利用E-BE制备的晶粒尺寸明显大很多(约90nm),表面粗糙;在透光率、光致发光特性和禁带宽度上,平均透光率均大于85%,利用对α与光子能量hv作图,可得出rf-MS和E-BE制备的AZO薄膜在退火以后的禁带宽度分别为3.34eV、3.32eV,它们均大于未掺杂的ZnO薄膜的禁带宽度3.30eV;PL谱中在380nm左右均出现近带边发射而没有黄绿光发射带,利用四探针装置测量了两种方法制备的AZO薄膜的电学性能,其中利用rf-MS制备的电阻率为9.8×10Ωcm,E-BE制备的AZO薄膜电阻率为1.3×10Ωcm,均为n型半导体薄膜.Al掺杂≤2wt%的条件下,电阻率随着掺杂浓度的提高而下降,下降的原因一是由于Al离子以替位形式取代了Zn离子的位置以后,来源于Al掺杂的施主电子载流子密度不断增加;二是由于无法结合的Al离子成为间隙离子.有趣的是,Al掺杂超过了2wt%以后,电阻率随着掺杂浓度的提高反而增加.

关键词： ZnO thin film rf-magnetron sputtering E-beam evaporation XRD AFM

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