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Analysis and modeling of resistive switching mechanism oriented to fault tolerance of resistive memory based on memristor

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Chinese Physics B 2014年第3期23卷 602-607页

作者：黄达吴俊杰唐玉华 State Key Laboratory of High Performance Computing National University of Defense Technology School of Computer National University of Defense Technology

With the progress of the semiconductor industry, resistive memories, especially the memristor, have drawn increasing attention. The resistive memory based on memrsitor has not been commercialized mainly because of data error. Currently, there are more studies focused on fault tolerance of resistive memory. This paper studies the resistive switching mechanism which may have time-varying characteristics. resistive switching mechanism is analyzed and its respective circuit model is established based on the memristor Spice model.

关键词： resistive ram fault tolerance resistive switching mechanism circuit model

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Flexible Memristive Devices Based on Graphene Quantum-Dot Nanocomposites

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Computers, Materials & Continua 2022年第8期72卷 3283-3297页

作者： Sung Won Hwang Dae-Ki Hong Department of System Semiconductor Engineering SangMyung UniversityCheonan-si31066Korea

Artificial neural networks(ANNs)are attracting attention for their high performance in various fields,because increasing the network size improves its *** large-scale neural networks are difficult to implement on custom hardware,a two-dimensional(2D)structure is applied to an ANN in the form of a *** demonstrate a synapse crossbar device from recent research by applying a memristive system to neuromorphic *** system is designed using two-dimensional structures,graphene quantum dots(GQDs)and graphene oxide(GO).raman spectrum analysis results indicate a D-band of 1421 cm^(−1) that occurs in the disorder;band is expressed as an atomic characteristic of carbon in the sp2 hybridized *** is also a G-band of 1518 cm^(−1) that corresponds to the graphite *** G bands measured for RGO-GQDs present significant GQD edge-dependent shifts with *** avoid an abruptly-formed conduction path,effect of barrier layer on graphene/ITO interface was *** confirmed the variation in the nanostructure in the RGO-GQD layers by analyzing them using *** applying a negative bias to the electrode,a crystalline RGO-GQD region formed,which a conductive ***,a synaptic array for a neuromorphic chip with GQDs applied was demonstrated using a crossbar array.

关键词： Memristive devices neuromorphic chip resistive ram quantum dot graphene

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An Overview of Non-Volatile Flip-Flops Based on Emerging Memory Technologies(Invited paper)

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Journal of Electronic Science and Technology 2014年第2期12卷 173-181页

作者： J.M.Portal M.Bocquet M.Moreau H.Aziza D.Deleruyelle Y.Zhang W.Kang J.-O.Klein Y.-G.Zhang C.Chappert W.-S.Zhao Aix-Marseille University and Institut Matériaux Microélectronique Nanosciences de Provence CNRS UMR7334MarseilleFrance Institut d’Electronique Fondamentale University Paris-Sud 11 and CNRS UMR8622Orsay 91405France Electronics and Information Engineering School Beihang University

Low power consumption is a major issue in nowadays electronics systems. This trend is pushed by the development of data center related to cloud services and soon to the Internet of Things （IoT） deployment. Memories are one of the major contributors to power consumption. However, the development of emerging memory technologies paves the way to low-power design, through the partial replacement of the dynamic random access memory （Dram） with the non-volatile stand-alone memory in servers or with the embedded or distributed emerging non-volatile memory in IoT objects. In the latter case, non-volatile flip-flops （NVFFs） seem a promising candidate to replace the retention latch. Indeed, IoT objects present long sleep time and NVFFs offer to save data in registers with zero power when the application is idle. This paper gives an overview of NVFF architecture flavors for various emerging memory technologies.

关键词： Emerging memory technology ferroelectric ram low power magnetic ram non-volatile flip-flops phase change ram resistive ram

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