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Analysis and modeling of resistive switching mechanism oriented to fault tolerance of resistive memory based on memristor

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Chinese Physics B 2014年第3期23卷 602-607页

作者：黄达吴俊杰唐玉华 State Key Laboratory of High Performance Computing National University of Defense Technology School of Computer National University of Defense Technology

With the progress of the semiconductor industry, resistive memories, especially the memristor, have drawn increasing attention. The resistive memory based on memrsitor has not been commercialized mainly because of data error. Currently, there are more studies focused on fault tolerance of resistive memory. This paper studies the resistive switching mechanism which may have time-varying characteristics. resistive switching mechanism is analyzed and its respective circuit model is established based on the memristor Spice model.

关键词： resistive RAM fault tolerance resistive switching mechanism circuit model

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Flexible Memristive Devices Based on Graphene Quantum-Dot Nanocomposites

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Computers, Materials & Continua 2022年第8期72卷 3283-3297页

作者： Sung Won Hwang Dae-Ki Hong Department of System Semiconductor Engineering SangMyung UniversityCheonan-si31066Korea

Artificial neural networks(ANNs)are attracting attention for their high performance in various fields,because increasing the network size improves its functioning.Since large-scale neural networks are difficult to implement on custom hardware,a two-dimensional(2D)structure is applied to an ANN in the form of a crossbar.We demonstrate a synapse crossbar device from recent research by applying a memristive system to neuromorphic chips.The system is designed using two-dimensional structures,graphene quantum dots(GQDs)and graphene oxide(GO).raman spectrum analysis results indicate a D-band of 1421 cm^(−1) that occurs in the disorder;band is expressed as an atomic characteristic of carbon in the sp2 hybridized structure.There is also a G-band of 1518 cm^(−1) that corresponds to the graphite structure.The G bands measured for RGO-GQDs present significant GQD edge-dependent shifts with position.To avoid an abruptly-formed conduction path,effect of barrier layer on graphene/ITO interface was investigated.We confirmed the variation in the nanostructure in the RGO-GQD layers by analyzing them using HR-TEM.After applying a negative bias to the electrode,a crystalline RGO-GQD region formed,which a conductive path.Especially,a synaptic array for a neuromorphic chip with GQDs applied was demonstrated using a crossbar array.

关键词： Memristive devices neuromorphic chip resistive RAM quantum dot graphene

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