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Surface plasmon-enhanced amorphous-silicon-nitride light emission with single-layer gold waveguides

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Chinese Optics Letters 2013年第2期11卷 88-90页

作者：陈可勇冯雪黄栩东 State Key Laboratory of Integrated Optoelectronics Department of Electronic EngineeringTsinghua University

Surface-plasmon （SP） enhancement of amorphous-silicon-nitride （a-SiNx） light emission with single-layer gold （Au） waveguides is experimentally demonstrated through time-resolved photoluminescence measure- ment. The a-SiN~ active layer with strong steady-state photoluminescence at 560 nm is prepared by plasma-enhanced chemical vapor deposition, and ricated by magnetron sputtering. The maximum the Au waveguide on the top of the a-SiNx layer is lab- Purcell factor value of -3 is achieved with identified SP resonance of the Au waveguide at -530 nm.

关键词： Gold Light emission Photoluminescence plasma enhanced chemical vapor deposition Plasmons Silicon Silicon nitride Waveguides

Surface modification of 316L stainless steeldiamond-like carbon films

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Journal of Iron and Steel Research International 2020年第7期27卷 867-874页

作者： Rui-wu Li Zheng Zhang Jian-wei Li Ke-xin Ma Yuan-yuan Guo Yan-wen Zhou Fa-yu Wu School of Materials and Metallurgy University of Science and Technology LiaoningAnshan 114051LiaoningChina Liaoning Censcience Industrial Co. Ltd.Research and Design InstituteLiaoyang 111200LiaoningChina

The diamond-like carbon(DLC)film on 316L stainless steel substrate was preparedpulsed plasma-enhanced chemical vapor deposition,and the performance of the films was optimizedregulating the pulse *** and properties of DLC film on 316L stainless steel were characterizedatomic force microscopy,field-emission scanning electron microscopy,Raman spectra,nano-indenter and electrochemical *** results showed that DLC films with smooth and dense morphology have a low friction coefficient and high nano-indentation hardness,and the surface hardness of 316L stainless steel substrate was enhancedmore than 3 *** mechanical properties of DLC films and their bond with 316L stainless steel could be further optimizedincreasing pulse *** films on 316L stainless steel substrate increased the self-corrosion potential0.173 V and decreased self-corrosion current99%,which significantly improved the anti-corrosive properties of 316L substrate.

关键词： 316L stainless steel Diamond-like carbon film plasma enhanced chemical vapor deposition Frictional wear Nano-indentation Corrosion resistance

Design and fabrication of optical power splitters with large port count

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Chinese Optics Letters 2014年第9期12卷 70-74页

作者：王亮亮安俊明张家顺吴远大李建光王红杰王玥潘盼钟飞査强尹小杰胡雄伟赵德刚 State Key Laboratory on Integrated Optoelectronics Institute of SemiconductorsChinese Academy of Sciences Henan Shi Jia Photons Technology Co. Ltd

We design and fabricate compact, low loss, and high port-count optical power splitters of 1 × 128 and 2 × 128 using silica-based planar lightwave circuit （PLC） technology on 6 inch quartz substrate. PLC technology is mainly based on plasma enhanced chemical vapor deposition, photolithography, and etching. The measured results show that the insertion loss, uniformity, and wavelength-dependent loss of 1 ~ 128 and 2 x 128 optical power splitters are less than 23, 1.43, and 0.92 dB and 23.3, 1.8, and 1.3 dB, respectively, in the wavelength range from 1.26 to 1.65/ma. The polarization-dependent losses are less than 0.16 and 0.2 dB, respectively, in the wavelengths of 1.31, 1.49, and 1.55 l/in.

关键词： Photolithography plasma enhanced chemical vapor deposition Quartz

Dependence of wet etch rate on deposition,annealing conditions and etchants for PECVD silicon nitride film

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Journal of Semiconductors 2009年第9期30卷 151-154页

作者：唐龙娟朱银芳杨晋玲李艳周威解婧刘云飞杨富华 Institute of Semiconductors Chinese Academy of Sciences State Key Laboratory of Transducer Technology

The influence of deposition, annealing conditions, and etchants on the wet etch rate of plasma enhanced chemical vapor deposition （PECVD） silicon nitride thin film is studied. The deposition source gas flow rate and annealing temperature were varied to decrease the etch rate of SiNx：H by HF solution. A low etch rate was achieved by increasing the SiH4 gas flow rate or annealing temperature, or decreasing the NH3 and N2 gas flow rate. Concentrated, buffered, and dilute hydrofluoric acid were utilized as etchants for Sit2 and SiNx：H. A high etching selectivity of Sit2 over SiNx：H was obtained using highly concentrated buffered HE

关键词： plasma enhanced chemical vapor deposition silicon nitride HF solution etch rate

Low-loss amorphous Si waveguides with gradient refractive index cladding structure

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Chinese Optics Letters 2012年第4期10卷 44-45页

作者：邱伟彬王加贤 College of Information Science and Engineering Huaqiao University

Amorphous Si waveguides with gradient refractive index cladding structure are proposed and fabricated using plasma-enhanced chemical vapor deposition *** with 6 dB/cm for ridge waveguide without gradient cladding,the ... 详细信息

关键词： Amorphous silicon chemical vapor deposition Cladding (coating) plasma enhanced chemical vapor deposition Ridge waveguides Silicon Waveguides

Synthesis of Anatase Titania Nanostructures at Room Temperature by PECVD Technique

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Journal of Materials Science & Technology 2011年第8期27卷 696-700页

作者： K.M.K. Srivatsa Deepak Chhikara M. Senthil Kumar Materials Physics and Engineering Division National Physical Laboratory Council of Scientific & Industrial Research (CSIR) Physics of Energy Harvesting Division National Physical Laboratory Council of Scientific & Industrial Research (CSIR)

titania nanostructures have been synthesized at room temperature by plasma enhanced chemical vapor deposition （PECVD） process on silicon （100） substrates using titanium tetraisopropoxide [Ti（OC3H7）4, TTIP] vapor, argon and oxygen mixtures under various deposition pressures. The deposited titania has been characterized for its structural, morphological and chemical composition by X-ray diffraction, scanning electron microscopy, energy dispersive X-ray （EDX） spectroscopy and Fourier transform infrared （FTIR） spectroscopy recordings. With the variation of deposition pressure, titania assumes various nanostructures viz. nanocrystals, nanoparticles, noanorods and comb-like structure. EDX and FTIR measurements show that the deposited titania is of high chemical purity. The possible growth mechanisms for the observed titania nanostructures have been discussed.

关键词： Nanostructures plasma enhanced chemical vapor deposition Anatase titania

Fabrication of silica-on-silicon planar lightwave circuits by PECVD and ECR

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Chinese Optics Letters 2005年第5期3卷 275-277页

作者：周立兵罗风光曹明翠 State Key Laboratory of Laser Technology Huazhong University of Science and Technology Wuhan 430074

plasma enhanced chemical vapor deposition (PECVD) and electron cyclotron resonance (ECR) etching were used in the development of silica layers for planar waveguide applications. The addition of GeH4 to silica was used to control the refractive index of core layers with core-to-clad index differences in the range of 0.2%-1.3%. Refractive index uniformity variance of ±0.0003 was achieved after annealing for 4-inch Si (100) wafers. The core layers with thickness up to 6 μm were etched by ECR with optimized recipe and mask material. Low-loss silica-on-silicon waveguides whose propagation loss is approximately 0.07 dB/cm at 1550 nm are fabricated.

关键词： Annealing Electron cyclotron resonance Etching plasma enhanced chemical vapor deposition Refractive index Silica Silicon

Investigation of high extraction efficiency flip-chip GaN-based light-emitting diodes

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Science in China(Series F) 2009年第8期52卷 1476-1482页

作者： DA XiaoLi SHEN GuangDi XU Chen ZOU DeShu ZHU YanXu ZHANG JianMing Institute of Electronic Information and Control Engineering Beijing Optoelectronic Technology Lab Beijing University of TechnologyBeijing 100124 China

In order to obtain higher light output power, the flip-chip structure is used. We studied the ratio of the light of GaN sides before and after fabricating metal reflector on p-GaN. The SiO2/SiNx dielectric film reflectors were deposited through plasma enhance chemical vapor deposition following the fabrication of metal reflector, and then the dielectric film reflectors on the electrodes were etched in order to expose the electrodes to the air. It is found that comparing with the flip-chip GaN-LED without dielectric film reflectors, light output power can be increased by as high as 10.2% after the deposition of 2 pairs of SiO2/SiNx dielectric film reflectors on GaN-LEDs, which cover the sidewalls and the areas without the metal reflector. This result indicates that the high reflector formed by multi-layer dielectric films is useful to enhance the light output power of GaN-based LED, which reflects light from step sidewalls and p-GaN without metal reflector to internal, and then light emits from the surface.

关键词： GaN light emitting diodes SiO2/SiN=dielectric film reflectors plasma enhanced chemical vapor deposition

Optical absorption enhancement of μc-SiGe:H films deposited via high pressure and high power

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Optoelectronics Letters 2014年第3期10卷 202-205页

作者：李天微张建军曹宇黄振华马俊倪牮赵颖 Key Laboratory of Photo-electronics Thin Film Devices and Technique of Tianjin Key Laboratory of Photo-electronicInformation Science and TechnologyMinistry of Education of ChinaInstitute of Photo-electronic Thin Film Devices and TechniqueNankai University

Hydrogenated microcrystalline silicon-germanium(μc-SiGe:H) films are fabricated by radio-frequency plasma-enhanced chemical vapor deposition(RF-PECVD).The optical absorption coefficient and the photosensitivity of the μc-SiGe:H films increase dramatically by increasing the plasma power and deposition pressure ***,the microstructural properties of the μc-SiGe:H films are also *** combining Raman,Fourier transform infrared(FTIR) and X-ray fluoroscopy(XRF) measurements,it is shown that the Ge-bonding configuration and compactability of the μc-SiGe:H thin films play a crucial role in enhancing the optical absorption and optimizing the quality of the films via a significant reduction in the defect density.

关键词： Germanium Light absorption plasma enhanced chemical vapor deposition