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检索条件"主题词=p-i-n photodiode"
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Simulation of Optical Models in Lightwave Links Using SpW
Simulation of Optical Models in Lightwave Links Using SPW
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1998 international Conference on Communication Technology
作者: Haocheng Zheng Shizhong Xie Zucheng Zhou Bingkun Zhou Dept.of Electronic Engineering Tsinghua University
<正>in this article optical models in lightwave links,which include a LD(laser diode) source, a single-mode fiber and a p-i-n photodiode receiver model,are simulated and investigated using SpW(signal processing w... 详细信息
来源: cnki会议 评论
Low-Leakage in0.53Ga0.47As p-i-n photodetector Fabricated on GaAs Substrate with Linearly Graded Metamorphic inxGa1-xp Buffer
Low-Leakage In0.53Ga0.47As p-i-n Photodetector Fabricated on...
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Asia-pacific Optical Communications 2004
作者: Chi-Kuan Lin Hao-Chung Kuo Yu-Sheng Liao and Gong-Ru Lin* Department of photonics & institute of Electro-Optical Engineering national Chiao Tung University no. 1001 Ta Hsueh Rd. Hsinchu Taiwan 30050 R. O. C.
A novel top-illuminated metamorphic in0.53Ga0.47As p-i-n photodiodes (MM-pinpD) grown on GaAs substrate by using a linearly graded inxGa1-xp (x graded from 0.51 to 1) buffer layer is reported. The dar
来源: cnki会议 评论