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Atomic layer deposition for nanoscale oxide semiconductor thin film transistors:review and outlook

International Journal of Extreme Manufacturing 2023年第1期5卷 153-180页

作者： Hye-Mi Kim Dong-Gyu Kim Yoon-Seo Kim Minseok Kim Jin-Seong Park Division of Materials Science and Engineering Hanyang University222 Wangsimni-roSeongdong-guSeoul 04763Republic of Korea

Since the first report of amorphous In–Ga–Zn–O based thin film transistors,interest in oxide semiconductors has *** offer high mobility,low off-current,low process temperature,and wide flexibility for compositions and ***,depositing oxide semiconductors using conventional processes like physical vapor deposition leads to problematic issues,especially for high-resolution displays and highly integrated memory *** approaches have limited process flexibility and poor conformality on structured *** layer deposition(ALD)is an advanced technique which can provide conformal,thickness-controlled,and high-quality thin film ***,studies on ALD based oxide semiconductors have dramatically increased *** so,the relationships between the film properties of ALD-oxide semiconductors and the main variables associated with deposition are still poorly understood,as are many issues related to *** this review,to introduce ALD-oxide semiconductors,we provide:(a)a brief summary of the history and importance of ALD-based oxide semiconductors in industry,(b)a discussion of the benefits of ALD for oxide semiconductor deposition(in-situ composition control in vertical distribution/vertical structure engineering/chemical reaction and film properties/insulator and interface engineering),and(c)an explanation of the challenging issues of scaling oxide semiconductors and ALD for industrial *** review provides valuable perspectives for researchers who have interest in semiconductor materials and electronic device applications,and the reasons ALD is important to applications of oxide semiconductors.

关键词： atomic layer deposition(ALD) oxide semiconductor thin film transistor(TFT)

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Humidity-induced synaptic plasticity of ZnO artificial synapses using peptide insulator for neuromorphic computing

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Journal of Materials Science & Technology 2022年第24期119卷 150-155页

作者： Min-Kyu Song Hojung Lee Jeong Hyun Yoon Young-Woong Song Seok Daniel Namgung Taehoon Sung Yoon-Sik Lee Jong-Seok Lee Ki Tae Nam Jang-Yeon Kwon School of Integrated Technology Yonsei UniversityIncheon 21983South Korea Department of Materials Science and Engineering Seoul National UniversitySeoul 08826South Korea Soft Foundry Seoul National UniversitySeoul 08826South Korea School of Chemical and Biological Engineering Seoul National UniversitySeoul 08826South Korea

Neuromorphic devices inspired by the human brain have attracted significant attention because of their excellent ability for cognitive and parallel *** study presents ZnO-based artificial synapses with peptide insulators for the electrical emulation of biological *** demonstrated the dynamic responses of the device under various environmental *** proton-conducting property of the tyrosine-rich peptide enables time-dependent responses under ambient conditions such that various aspects of synaptic behaviors are emulated by the *** transition from short-term memory to longterm memory is achieved via electrochemical doping of ZnO by ***,we demonstrate an image classification simulation using a multi-layer perceptron model to evaluate the potential of the device for use in neuromorphic *** neural network based on our device achieved a recognition accuracy of 87.47% for the MNIST handwritten digit *** work proposes a novel device platform inspired by biosystems for brain-mimetic hardware systems.

关键词： Artificial synapse Neuromorphic computing oxide semiconductor Proton conductor Artificial neural network

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Heterojunction-engineered carrier transport in elevated-metal metal-oxide thin-film transistors

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Journal of semiconductors 2024年第10期45卷 54-59页

作者： Xiao Li Zhikang Ma Jinxiong Li Wengao Pan Congwei Liao Shengdong Zhang Zhuo Gao Dong Fu Lei Lu School of Electronic and Computer Engineering Peking UniversityShenzhen 518055China Guangdong Juhua Printed Display Technology Company Limited Guangzhou 510700China

This study investigates the carrier transport of heterojunction channel in oxide semiconductor thin-film transistor(TFT)using the elevated-metal metal-oxide(EMMO)architecture and indium−zinc oxide(InZnO).The heterojunction band diagram of InZnO bilayer was modified by the cation composition to form the two-dimensional electron gas(2DEG)at the interface quantum well,as verified using a metal−insulator−semiconductor(MIS)*** the 2DEG indeed contributes to a higher mobility than the monolayer channel,the competition and cooperation between the gate field and the built-in field strongly affect such mobility-boosting effect,originating from the carrier inelastic collision at the heterojunction interface and the gate field-induced suppression of quantum *** from the proper energy-band engineering,a high mobility of 84.3 cm2·V^(−1)·s^(−1),a decent threshold voltage(V_(th))of−6.5 V,and a steep subthreshold swing(SS)of 0.29 V/dec were obtained in InZnO-based heterojunction TFT.

关键词： oxide semiconductor thin-film transistors two-dimensional electron gas heterojunction high mobility

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Epitaxial growth ofβ-Ga_(2)O_(3)thin films on Ga_(2)O_(3)and Al_(2)O_(3)substrates by using pulsed laser deposition

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Journal of Advanced Dielectrics 2019年第4期9卷 47-53页

作者： Yuxin An Liyan Dai Ying Wu Biao Wu Yanfei Zhao Tong Liu Hui Hao Zhengcheng Li Gang Niu Jinping Zhang Zhiyong Quan Sunan Dingy Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education School of Chemistry and Materials Science Shanxi Normal University Linfen 041004P.R.China Vacuum Interconnected Nanotech Workstation(Nano-X)Suzhou Institute of Nano-Tech and Nano-Bionics(SINANO)Chinese Academy of Sciences(CAS) Suzhou 215123P.R.China Electronic Materials Research Laboratory Key Laboratory of the Ministry of Education&International Center for Dielectric Research School of Electronic and Information Xi’an Jiaotong UniversityXi’an 710049P.R.China

In this work,we have successfully grown high quality epitaxialβ-Ga_(2)O_(3)thin films onβ-Ga_(2)O_(3)(100)and Al_(2)O_(3)(0001)substrates using pulsed laser deposition(PLD).By optimizing temperature and oxygen pressure,the best conditions were found to be 650-700℃and 0.5 *** further improve the quality of hetero-epitaxialβ-Ga_(2)O_(3),the sapphire substrates were pretreated for atomic terraced surface by chemical cleaning and high temperature *** the optical transmittance measurements,the films grown at 600-750℃exhibit a clear absorption edge at deep ultraviolet region around 250-275 nm *** resolution transmission electron microscope(HRTEM)images and X-ray diffraction(XRD)patterns demonstrate thatβ-Ga_(2)O_(3)(-201)//Al_(2)O_(3)(0001)epitaxial texture dominated the epitaxial oxide films on sapphire substrate,which opens up the possibilities of high power electric devices.

关键词： oxide semiconductor β-Ga_(2)O_(3)epitaxy optical transmission spectrum pulsed laser deposition crystal growth

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