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A design and Comparative Investigation of Graded AlxGa1–xN EBL for W-B0.375Ga N/W-B0.45GaN Edge Emitting Laser Diode on AlN Substrate

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Chinese Journal of Electronics 2022年第4期31卷 683-689页

作者： NIASS Mussaab I. WANG Fang LIU Yuhuai National Center for International Joint Research of Electronic Materials and Systems International Joint-Laboratory of Electronic Materials and Systems of Henan Province School of Information EngineeringZhengzhou University Zhengzhou Way Do Electronics Co.Ltd. Research Institute of Industrial Technology Co.Ltd. Zhengzhou University Institute of Materials and Systems for Sustainability Nagoya University

In this paper, we numerically demonstrated the possibility of using wurtzite boron gallium nitride(W-BGa N) as active layers(quantum well and quantum barriers) along with aluminum gallium nitride(Al Ga N) to achieve lasing at a deep ultraviolet range at 263nm for edge emitting laser diode. The laser diode structure simulations were conducted by using the CrosslightLASTIP software with a self-consistency model for varies quantity calculations. Moreover, multiple designed structures such as full and half have been achieved as well as the study of the effect of grading engineering/techniques at the electron blocking layer for linearly-graded-down and linearly-graded-up grading techniques were also emphasized. As a result, a maximum emitted power of 26 W,a minimum threshold current of 308 m A, a slope efficiency of 2.82 W/A, and a minimum p-type resistivity of0.228 Ω·cm from the different doping concentrations and geometrical distances were thoroughly observed and jotted down.

关键词： electron blocking layer edge emitting laser diode linearly-graded-down grading techniques gallium compounds quantum well lasers Lasing action in semiconductors wide band gap semiconductors slope efficiency crosslight-LASTIP software deep ultraviolet range linearly-graded-up grading techniques III-V semiconductors Semiconductor lasers II-VI and III-V semiconductors boron compounds substrate aluminium compounds design of specific laser systems self-consistency model optical design techniques wurtzite boron gallium nitride quantum barriers aluminum gallium nitride

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Improvement of bandwidth in a 100 kHz swept laser source with phase controllable signal driving

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Chinese Optics Letters 2023年第1期21卷 110-114页

作者：杨志伟吴旭裴继红阮双琛 College of Electronic Information Engineering Shenzhen UniversityShenzhen 518060China Key Laboratory of Advanced optical Precision Manufacturing Technology of Guangdong Higher Education Institutes Shenzhen Technology UniversityShenzhen 518118China

Swept source optical coherence tomography(SS-OCT)is a new noninvasive technique for assessing tissue.Although it hasadvantages,such as being label-free,noninvasive,and with high resolution,it also has drawbacks:there has been no indepth research into identifying the driving of swept source.Based on preliminary research,we demonstrate a novel drivingmodulation method of a fiber Fabry–Perot tunable filter ranging phase adjustable as a tool for making bandwidth compensation of a swept laser source.This novel method is analyzed in detail;a swept laser source with a sweep rate of100.5 kHz over a range of 152.25 nm and at a center wavelength of 1335.45 nm is demonstrated.

关键词： swept laser source optical design techniques ring lasers laser applications

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