A Design and Comparative Investigation of Graded AlxGa1–xN EBL for W-B0.375Ga N/W-B0.45GaN Edge Emitting Laser Diode on AlN Substrate

作     者：NIASS Mussaab I. WANG Fang LIU Yuhuai 

作者机构：National Center for International Joint Research of Electronic Materials and Systems International Joint-Laboratory of Electronic Materials and Systems of Henan Province School of Information EngineeringZhengzhou University Zhengzhou Way Do Electronics Co.Ltd. Research Institute of Industrial Technology Co.Ltd. Zhengzhou University Institute of Materials and Systems for Sustainability Nagoya University 

出 版 物：《Chinese Journal of Electronics》 (电子学报(英文))

年 卷 期：2022年第31卷第4期

页      面：683-689页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 080901[工学-物理电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080401[工学-精密仪器及机械] 0804[工学-仪器科学与技术] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0803[工学-光学工程] 

基　　金：supported by National Key Research and Development Program (NKRDP 2016YFE0118400) the Key project of science and technology of Henan Province (172102410062) National Natural Science Foundation of China (61176008) the National Natural Science Foundation of China Henan Provincial Joint Fund Key Project (U1604263) 

主　　题：Edge emitting laser diodes (EELD) Semiconducting aluminum compounds Heterojunction semiconductor devices Quantum wells 

摘      要：In this paper, we numerically demonstrated the possibility of using wurtzite boron gallium nitride(W-BGa N) as active layers(quantum well and quantum barriers) along with aluminum gallium nitride(Al Ga N) to achieve lasing at a deep ultraviolet range at 263nm for edge emitting laser diode. The laser diode structure simulations were conducted by using the CrosslightLASTIP software with a self-consistency model for varies quantity calculations. Moreover, multiple designed structures such as full and half have been achieved as well as the study of the effect of grading engineering/techniques at the electron blocking layer for linearly-graded-down and linearly-graded-up grading techniques were also emphasized. As a result, a maximum emitted power of 26 W,a minimum threshold current of 308 m A, a slope efficiency of 2.82 W/A, and a minimum p-type resistivity of0.228 Ω·cm from the different doping concentrations and geometrical distances were thoroughly observed and jotted down.