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Enhancement of optical characteristic of InGaN/GaN multiple quantum-well structures by self-growing air voids

Science China(Technological Sciences) 2021年第7期64卷 1583-1588页

作者： DU JinJuan XU ShengRui PENG RuoShi FAN XiaoMeng ZHAO Ying TAO HongChang SU HuaKe NIU MuTong ZHANG JinCheng HAO Yue The National Key Disciplines Laboratory of Wide Band-gap Semiconductor School of MicroelectronicsXidian UniversityXi’an710071China Suzhou Institute of Nano-tech and Nano-Bionics(SINANO) Chinese Academy of SciencesSuzhou215132China

InGaN/GaN multiple quantum-well(MQW) structures with a wavelength range of green were successfully grown on a c-plane GaN template with SiO_2 stripe patterns along the [11-20] and [1-100] directions as a mask. The surface morphologies of both samples were investigated using scanning electron microscopy and demonstrated anisotropic growth characteristics of GaN. The optical characteristics were investigated using Raman spectra and photoluminescence(PL). The InGaN/GaN MQW structure grown on the GaN template with SiO_2 stripes along the [1-100] orientation exhibited less stress and higher PL intensity.Transmission electron microscopy results indicated that portions of MQWs were grown on an inclined semipolar plane, and air voids occurred only when the direction of the mask stripe was along the [1-100] orientation. The enhancement of the optical characteristic was due to the air-void structure and inclined semipolar quantum-well sidewalls.

关键词： InGaN/GaN MQWs SiO_2 mask stripes optical characteristic inclined quantum-well sidewall air voids

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Wavelength-selectivity polarization dependence of optical absorption and photoresponse in SnS nanosheets

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Nano Research 2021年第7期14卷 2224-2230页

作者： Yu Cui Ziqi Zhou Xinghua Wang Xiaoting Wang Zhihui Ren Longfei Pan Juehan Yang State Key Laboratory of Superlattices and Microstructures Institute of SemiconductorsChinese Academy of Sciences&Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing 100083China Department of Ophthalmology Union HospitalTongji Medical CollegeHuazhong University of Science and TechnologyWuhan 430022China

The optical and optoelectronic characteristics of SnS nanosheets with strong anisotropic crystal structure are researched.Transmission electron microscopy and polarized Raman spectra are used to determine the crystal orientation of SnS nanosheets.The photodetector based on SnS nanosheets exhibits the carrier mobility of 37.75 cm^(2)/V·s,photoresponsivity of 310.5 A/W and external quantum efficiency of 8.56×10^(4)%at 450 nm.optical absorption around the absorption edge presents obvious polarization sensitivity with the highest optical absorption dichroic ratio of 3.06 at 862 nm.Due to anisotropic optical absorption,the polarized photocurrent appears as the periodic change affected by the polarized direction of the incident light at 808 nm.Overall,SnS nanosheets show good potential in the future application of the polarized photodetectors for specific wavelength.

关键词： SnS anisotropy optical characteristic polarized photoresponse

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