Enhancement of optical characteristic of InGaN/GaN multiple quantum-well structures by self-growing air voids

作     者：DU JinJuan XU ShengRui PENG RuoShi FAN XiaoMeng ZHAO Ying TAO HongChang SU HuaKe NIU MuTong ZHANG JinCheng HAO Yue DU JinJuan;XU ShengRui;PENG RuoShi;FAN XiaoMeng;ZHAO Ying;TAO HongChang;SU HuaKe;NIU MuTong;ZHANG JinCheng;HAO Yue

作者机构：The National Key Disciplines Laboratory of Wide Band-gap SemiconductorSchool of MicroelectronicsXidian UniversityXi’an710071China Suzhou Institute of Nano-tech and Nano-Bionics(SINANO)Chinese Academy of SciencesSuzhou215132China 

出 版 物：《Science China(Technological Sciences)》 (中国科学（技术科学英文版）)

年 卷 期：2021年第64卷第7期

页      面：1583-1588页

核心收录：

学科分类：0810[工学-信息与通信工程] 081702[工学-化学工艺] 08[工学] 0817[工学-化学工程与技术] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 0812[工学-计算机科学与技术（可授工学、理学学位）] 

基　　金：supported by the Key Research and Development Program in Shaanxi Province (Grant Nos. 2018ZDCXL-GY-01-02-02 and 2018ZDCXLGY-01-07) Wuhu and Xidian University Special Fund for Industry University Research Cooperation (Grant No. XWYCXY-012020007) the National Natural Science Foundation of China (Grant No. 62074120) the Fundamental Research Funds for the Central Universities the Innovation Fund of Xidian University。 

主　　题：InGaN/GaN MQWs SiO_2 mask stripes optical characteristic inclined quantum-well sidewall air voids 

摘      要：InGaN/GaN multiple quantum-well(MQW) structures with a wavelength range of green were successfully grown on a c-plane GaN template with SiO_2 stripe patterns along the [11-20] and [1-100] directions as a mask. The surface morphologies of both samples were investigated using scanning electron microscopy and demonstrated anisotropic growth characteristics of GaN. The optical characteristics were investigated using Raman spectra and photoluminescence(PL). The InGaN/GaN MQW structure grown on the GaN template with SiO_2 stripes along the [1-100] orientation exhibited less stress and higher PL intensity.Transmission electron microscopy results indicated that portions of MQWs were grown on an inclined semipolar plane, and air voids occurred only when the direction of the mask stripe was along the [1-100] orientation. The enhancement of the optical characteristic was due to the air-void structure and inclined semipolar quantum-well sidewalls.