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Highly efficient and selective CO2 electro-reduction with atomic Fe-C-N hybrid coordination on porous carbon nematosphere

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Nano Research 2019年第9期12卷 2318-2323页

作者： Haixia Zhong Fanlu Meng Qi Zhang Kaihua Liu Xinbo Zhang State Key Laboratory of Rare Earth Resource Utilization Changchun Institute cf Applied ChemistryChinese Academy of SciencesChangchun 130022China Key Laboratory of Automobile Materials Ministry of Education and College of Materials Science and EngineeringJilin UniversityChangchun 130012China

Carbon dioxide reduction(CO2RR)has become a promising way to address the energy and environmental crisis,of which the fundamental development of the optimal electrocatalysts is the crucial part.Herein,we develop Fe and N doping porous carb on n ematosphere(FeNPCN)as an excellent CO2RR electrocatalyst in aqueous electrolyte.Featuring with the high conductivity,pore structure and abundant Fe and N doping,FeNPCN exhibits high catalytic activity with a high faradaic selectivity of CO(94%)and long-term durability.Moreover,the ratio of CO and H2 can be changed by the applied potential for the different syngas related industry.Density functional theory(DFT)calculation results also reveal that the excellent catalytic activity is likely attributed to C and N hybrid coordination with atomic Fe.

关键词： carbon dioxide reducti on electrocatalysis porous carbon carb on mon oxide metal/nitrogen dopi ng

Clinical assessment and identification of immuno-oncology markers concerning the 19-gene based risk classifier in stage Ⅳ colorectal cancer

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World Journal of Gastroenterology 2019年第11期25卷 1341-1354页

作者： Jong Lyul Lee Seon Ae Roh Chan Wook Kim Yi Hong Kwon Ye Jin Ha Seon-Kyu Kim Seon-Young Kim Dong-Hyung Cho Yong Sung Kim Jin Cheon Kim Department of Surgery University of Ulsan College of Medicine Institute of Innovative Cancer Research Asan Medical Center Medical Genomics Research Center Korea Research Institute of Bioscience and Biotechnology School of Life Sciences Kyungpook National University

BACKGROUND Genomic profiling of tumors has contributed to the understanding of colorectal cancer(CRC), facilitating diagnosis, prognosis and selection of treatments,including targeted regimens. A report suggested that a 19-gene-based risk classifier(TCA19) was a prognostic tool for patients with stage III CRC. The survival outcomes in patients with stage IV CRC are still poor and appropriate selection of targeted therapies and immunotherapies is challenging.AIM To assess clinical implication of TCA19 in patients with stage IV CRC, and to identify TCA19 with involvement in immune-oncology.METHODS A retrospective review of the medical records of 60 patients with stage IV CRC was conducted, assessing clinicopathological variables and progression-free survival(PFS). TCA19 gene expression was determined by quantitative polymerase chain reaction(qPCR) in matched normal and tumor tissues taken from the study cohort. Expression of potential immune-oncology regulatory proteins and targets was examined by immunohistochemistry(IHC), western blot, immunofluorescence staining in tissues from a validation cohort of 10 patients, and in CRC cell lines co-cultured with monocyte in vitro.RESULTS In the patients with TCA19 score higher than the median, the PFS rates of eight patients who received the targeted regimens were significantly higher than the PFS rates of four patients who received 5-fluorouracil-based regimen(P = 0.041).In multivariate analysis, expression of signaling lymphocytic activation molecule family, member 7(SLAMF7) and triggering receptor expressed on myeloid cells 1(TREM1) was associated with PFS in the 60-patient cohort. After checking another 10 validate set, the expression of the IHC, the level of real-time qPCR,and the level of western blot were lower for SLAMF7 and higher for TREM7 in primary and metastatic tumors than in normal tissues. In CRC cells expressing SLAMF7 that were co-cultured with a monocytic cell line, levels of CD 68 and CD73 were significantly lower at day 5 of co-culture than at day 0.CO

关键词： Colorectal cancer Prognosis Immunotherapy Signaling lymphocytic activation molecule family,member 7 Triggering receptor expressed on myeloid cells 1

Encapsulating segment-like antimony nanorod in hollow carbon tube as long-lifespan,high-rate anodes for rechargeable K-ion batteries

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Nano Research 2019年第5期12卷 1025-1031页

作者： Wen Luo Feng Li Weiran Zhang Kang Han Jean-Jacques Gaumet Hans-Eckhardt Schaefer Liqiang Mai Department of Physics School of ScienceWuhan University of TechnologyWuhan 430070China Hefei National Laboratory for Physical Sciences at the Microscale University of Science and Technology of ChinaHefei 230000China Division of Materials Science and Engineering Boston UniversityMA 02215USA State Key Laboratory of Advanced Technology for Materials Synthesis and Processing International School of Materials Science and Technology Wuhan University of TechnologyWuhan 430070China Laboratoire de Chimie et Physique: Approche Multi-echelles des Milieux Complexes Institut Jean BarriolUniversite de LorraineMetz 57070France Institute for Functional Matter and Quantum Technologies Stuttgart UniversityPfaffenwaldring 57Stuttgart 70569Germany

K-ion battery (KIB) is a new-type energy storage device that possesses potential advantages of low-cost and abundant resource of potassium.To develop advanced electrode materials for accommodating the large size and high activity of potassium ion is of great interests.Herein,a segment-like antimony (Sb) nanorod encapsulated in hollow carbon tube electrode material (Sb@HCT) was prepared.Beneficial from the virtue of abundant nitrogen doping in carbon tube,one-dimensional and hollow structure advantages,Sb@HCT exhibits excellent potassium storage properties:in the case of potassium bis(fluorosulfonyl)imide (KFSI) electrolyte,Sb@HCT displays a reversible capacity of up to 453.4 mAh·g^-1 at a current density of 0.5 A·g^-1 and good rate performance (a capacity of 211.5 mAh·g^-1 could be achieved at an ultrahigh rate of 5 A·g^-1).Additionally,Sb@HCT demonstrates excellent long-cycle stability at a current density of 2 A·g^-1 over 120 cycles.Meanwhile,electrolyte optimization is an effective strategy for greatly improving electrochemical performance.Through ex-situ characterizations,we disclosed the potassiation of Sb anode is quite reversible and undergoes multistep processes,combining solid solution reaction and two-phase reaction.

关键词： K-ion battery antimony anode hollow carbon tube encapsulation electrolyte optimizati on potassium storage mechanism

The 2 ℃ Global Temperature Target and the Evolution of the Long-TermGoal of Addressing Climate Change-From the United Nations FrameworkConvention on Climate Change to the Paris Agreement

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Engineering 2017年第2期3卷 272-278页

作者： Yun Gao Xiang Gao Xiaohua Zhang Department of Sdence & Technology and Climate Change China Meteorological Administration Beijing 100081 China Energy Research Institute National Development and Reform Commission Beijing 100038 China National Center for Climate Change Strategy and International Cooperation (NCSC) Beijing 100038 China

The Paris Agreement proposed to keep the increase in global average temperature to well below 2 ℃ abovepre-industrial levels and to pursue efforts to limit the temperature increase to 1.5 ℃ above pre-industriallevels. It was thus the first international treaty to endow the 2 ℃ global temperature target with legal effect.The qualitative expression of the ultimate objective in Article 2 of the United Nations Framework Conventionon Climate Change （UNFCCC） has now evolved into the numerical temperature rise target in Article 2 of theParis Agreement. Starting with the Second Assessment Report （SAR） of the Intergovernmental Panel on Cli-mate Change （IPCC）, an important task for subsequent assessments has been to provide scientific informa-tion to help determine the quantified long-term goal for UNFCCC negotiation. However, due to involvementin the value judgment within the scope of non-scientific assessment, the IPCC has never scientifically af-firmed the unacceptable extent of global temperature rise. The setting of the long-term goal for addressingclimate change has been a long process, and the 2 ℃ global temperature target is the political consensuson the basis of scientific assessment. This article analyzes the evolution of the long-term global goal foraddressing climate change and its impact on scientific assessment, negotiation processes, and global low-carbon development, from aspects of the origin of the target, the series of assessments carried out by the 1PCCfocusing on Article 2 of the UNFCCC, and the promotion of the global temperature goal at the political level.

关键词： Climate change International negotiationln tergovernmental Panel on Climate Change United Nations Framework Convention on Climate ChangeLong-term goal Critical vulnerability Intuitive building

Cubosome nanoparticles for enhanced delivery of mitochondria anticancer drug elesclomol and therapeutic monitoring via sub-cellular NAD(P) H multi-photon fluorescence lifetime imaging

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Nano Research 2019年第5期12卷 991-998页

作者： Ana R.Faria Oscar F.Silvestre Christian Maibohm Ricardo M.R.Adao Bruno F.B.Silva Jana B.Nieder Department of Nanophotonics Ultrafast Bio- and Nanophotonics GroupINL - International Iberian Nanotechnology LaboratoryAv.Mestre Jose Veiga s/n4715-330 BragaPortugal Department of Life Sciences INL-International Iberian Nanotechnology LaboratoryAv.Mestre Jose Veiga s/n4715-330 BragaPortugal

Elesclomol (ELC) is an anticancer drug inducing mitochondria cytotoxicity through reactive oxygen species.Here,for the first time,we encapsulate the poorly water soluble ELC in monoolein-based cubosomes stabilized with Pluronic F127.Cellular uptake and nanocarrier accumulation close to the mitochondria with sub-micrometer distance is identified via three-dimensional (3D) confocal microscopy and edge-to-edge compartment analysis.To monitor the therapeutic effect of the ELC nanocarrier,we apply for the first time,label-free time-lapse multi-photon fluorescence lifetime imaging microscopy (MP-FLIM) to track NAD(P)H cofactors with sub-cellular resolution on live cells exposed to an anticancer nanocarrier.Improved in vitro cytotoxicity is verified when loading the pre-complexed ELC with copper (ELC-Cu).Importantly,for equivalent copper concentration,cubosomes loaded with ELC-Cu show higher cytotoxicity compared to the free drug.The novel nanocarrier shows promising features for systemic ELC-Cu administration,and furthermore we establish the MP-FLIM technique for the assessment of anticancer drug delivery systems.

关键词： cubosomes mitoch on dria reactive oxyge n species elesclomol NAD(P)H fluoresce nee lifetime anticancer therapy

Fabrication of InAlGaN/GaN High Electron Mobility Transistors on Sapphire Substrates by Pulsed Metal Organic Chemical Vapor Deposition

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Chinese Physics Letters 2016年第10期33卷 145-148页

作者：全汝岱张进成张雅超张苇航任泽阳郝跃 Key Laboratory of Wide Band-Gap Semiconductor Technology School of MicroelectronicsXidian University

Nearly lattice-matched InAIGaN/GaN heterostructure is grown on sapphire substrates by pulsed metal organic chemical vapor deposition and excellent high electron mobility transistors are fabricated on this heterostructure. The electron mobility is 1668.08cm2/V.s together with a high two-dimensional-electron-gas density of 1.43 × 10^13 cm-2 for the InAlCaN/CaN heterostructure of 2onto InAlCaN quaternary barrier. High electron mobility transistors with gate dimensions of 1 × 50 μm2 and 4μm source-drain distance exhibit the maximum drain current of 763.91 mA/mm, the maximum extrinsic transconductance of 163.13 mS/mm, and current gain and maximum oscillation cutoff frequencies of 11 GHz and 21 GHz, respectively.

关键词： GaN is in of Fabrication of InAlGaN/GaN High Electron Mobility Transistors on Sapphire Substrates by Pulsed Metal Organic Chemical Vapor Deposition by on

The Stability of Some Viable Stars and Electromagnetic Field

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Chinese Physics Letters 2016年第7期33卷 25-27页

作者： M.Azam S.A.Mardan M.A.Rehman Division of Science and Technology University of EducationTownship Campus Department of Mathematics University of the Management and Technology

We examine the impact of electromagnetic field on the stability of compact stars corresponding to embedded class one metric using the concept of cracking. For this purpose, we develop the generalized hydrostatic equi- librium equation for charged perfect fluid distribution of compact stars and perturb it by means of local density perturbation scheme to check the stability of inner matter configuration. We investigate the cracking of Her X-I, PSR 1937＋21, PSR J 1614-2230, PSR J 0348＋0432 and B.X J 1856-37. We conclude that PSR J 0348＋0432 and RX J 1856-37 exhibit cracking when charge is introduced on these astrophysical objects.

关键词： of in et it on PSR The Stability of Some Viable Stars and Electromagnetic Field for

Comparison of GaN/AlGaN/AlN/GaN HEMTs Grown on Sapphire with Fe-Modulation-Doped and Unintentionally Doped GaN Buffer:Material Growth and Device Fabrication

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Chinese Physics Letters 2016年第11期33卷 99-103页

作者：巩稼民王权闫俊达刘峰奇冯春王晓亮王占国 School of Electronic Engineering Xi'an University of Posts and Telecommunications Key Laboratory of Semiconductor Materials Science Beijing Key Laboratory of Low Dimensional Semiconductor Materials and DevicesInstitute of SemiconductorsChinese Academy of Sciences

AlGaN/GaN high electron mobility transistors （HEMTs） grown on Fe-modulation-doped （MD） and unintentionally doped （UID） GaN buffer layers are investigated and compared. Highly resistive GaN buffers （10^9Ω·cm） are induced by individual mechanisms for the electron traps＇ formation： the Fe MD buffer （sample A） and the UID buffer with high density of edge-type dislocations （7.24×10^9cm^-2, sample B）. The 300K Hall test indicates that the mobility of sample A with Fe doping （2503cm^2V^-1s^-1） is much higher than sample B （1926cm^2V^-1s^-1） due to the decreased scattering effect on the two-dimensional electron gas. HEMT devices are fabricated on the two samples and pulsed I–V measurements are conducted. Device A shows better gate pinch-off characteristics and a higher threshold voltage （-2.63V） compared with device B （-3.71V）. Lower gate leakage current ｜IGS｜ of device A （3.32×10^-7A） is present compared with that of device B （8.29×10^-7A）. When the off-state quiescent points Q_2 （V GQ2=-8V, V DQ2=0V） are on, V th hardly shifts for device A while device B shows ＋0.21V positive threshold voltage shift, resulting from the existence of electron traps associated with the dislocations in the UID-GaN buffer layer under the gate. Under pulsed I–V and transconductance G m–V GS measurement, the device with the Fe MD-doped buffer shows more potential in improving reliability upon off-state stress.

关键词： GaN in HEMT is Comparison of GaN/AlGaN/AlN/GaN HEMTs Grown on Sapphire with Fe-Modulation-Doped and Unintentionally Doped GaN Buffer:Material Growth and Device Fabrication of Fe with on

High Lattice Match Growth of InAsSb Based Materials by Molecular Beam Epitaxy

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Chinese Physics Letters 2016年第12期33卷 133-137页

作者：任洋郝瑞亭刘思佳郭杰王国伟徐应强牛智川 Key Laboratory of Renewable Energy Advanced Materials and Manufacturing Technology(Ministry of Education) Provincial Key Laboratory of Rural Energy EngineeringInstitute of Solar EnergyYunnan Normal University State Key Laboratory for Superlattices and Microstructures Institute of SemiconductorsChinese Academy of Sciences Synergetic Innovation Center of Quantum Information and Quantum Physics University of Science and Technology of China

High lattice match growth of InAsSb based materials on GaSb substrates is demonstrated. The present results indicate that a stable substrate temperature and the optimal flux ratios are of critical importance in achieving a homogeneous InAsSb based material composition throughout the growth period. The quality of these epilayers is assessed using a high-resolution x-ray diffraction and atomic force microscope. The mismatch between the GaSb substrate and InAsSb alloy achieves almost zero, and the rms surface roughness of InAsSb alloy achieves around 1.7A over an area of 28μm × 28μm. At the same time, the mismatches between GaSb and InAs/InAs0.73Sb0.27 superlattices （SLs） achieve approximately 100 arcsec （75 periods） and zero （300 periods）, with the surface rms roughnesses of InAs/InAs0.73Sb0.27 SLs around 1.8 A （75 periods） and 2.1A （300 periods） over an area of 20 μm×20 μm, respectively. After fabrication and characterization of the devices, the dynamic resistance of the n-barrier-n InAsSb photodetector near zero bias is of the order of 10^6Ω·cm^2. At 77K, the positive-intrinsic-negative photodetectors are demonstrated in InAsSb and InAs/InAsSb SL （75 periods） materials, exhibiting fifty-percent cutoff wavelengths of 3.8μm and 5.1μm, respectively.

关键词： InAsSb as is GaSb on in High Lattice Match Growth of InAsSb Based Materials by Molecular Beam Epitaxy of by