检索结果-南通市图书馆

A non-destructive channel stress characterization for gate-allaround nanosheet transistors by confocal Raman methodology

引用

National Science Open 2023年第2期2卷 37-45页

作者： Ziqiang Huang Tao Liu Jingwen Yang Xin Sun Kun Chen Dawei Wang Hailong Hu Min Xu Chen Wang Saisheng Xu David Wei Zhang School of Microelectronics Fudan UniversityShanghai 200433China Shanghai Integrated Circuit Manufacturing Innovation Center Company Ltd. Shanghai 200433China Zhangjiang Fudan International Innovation Center Shanghai 200433China WITec(Beijing)Scientific Technology Co. Ltd.Beijing 100027China

non-destructive stress characterization is essential for gate-all-around(GAA)nanosheet(NS)transistors technology,while it is a big challenge to be realized on nanometer-sized GAA devices by using traditional Micro-Raman spectroscopy due to its light spot far exceeding the *** this work,a non-destructive stress characterization methodology of confocal Raman spectroscopy was proposed and performed for GAANS device *** stress evolution along the fabrication process was successfully characterized by designing high-density NS array and analyzing the linear scanned spectra in different *** related mechanism of stress evolution was systematically studied by Sentaurus process ***,applying this methodology on detecting the bending of suspended NS after channel release process was ***,this work might provide a promising solution to realize in-line characterization of channel stress in GAA NS transistors and process monitor of NS channel integrity.

关键词： non-destructive characterization channel stress gate all around(GAA) confocal Raman

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

Raman spectroscopy characterization of two-dimensional materials

引用

Chinese Physics B 2018年第3期27卷 80-93页

作者： Fang Liang Hejun Xu Xing Wu Chaolun Wang Chen Luo Jian Zhang Shanghai Key Laboratory of Multidimensional Information Processing Department of Electronic Engineering East China Normal University Shanghai 200241 China

Two-dimensional （2D） materials have become a hot study topic in recent years due to their outstanding electronic, optical, and thermal properties. The unique band structures of strong in-plane chemical bonds and weak out-of-plane van der Waals （vdW） interactions make 2D materials promising for nanodevices and various other applications. Raman spectroscopy is a powerful and non-destructive characterization tool to study the properties of 2D materials. In this work, we review the research on the characterization of 2D materials with Raman spectroscopy. In addition, we discuss the application of the Raman spectroscopy technique to semiconductors, superconductivity, photoelectricity, and thermoelectricity.

关键词： Raman MoS2 graphene 2D materials non-destructive characterization

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

欢迎您,

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

在线全文

请选择保存的检索档案：

请选择收藏分类：

通借通还

欢迎您,

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

在线全文

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：