Raman spectroscopy characterization of two-dimensional materials
Raman spectroscopy characterization of two-dimensional materials作者机构:Shanghai Key Laboratory of Multidimensional Information Processing Department of Electronic Engineering East China Normal University Shanghai 200241 China
出 版 物:《Chinese Physics B》 (中国物理B(英文版))
年 卷 期:2018年第27卷第3期
页 面:80-93页
核心收录:
学科分类:07[理学] 08[工学] 080104[工学-工程力学] 070302[理学-分析化学] 0805[工学-材料科学与工程(可授工学、理学学位)] 0703[理学-化学] 0704[理学-天文学] 0801[工学-力学(可授工学、理学学位)]
基 金:Project supported by the National Natural Science Foundation of China(Grant Nos.11504111,61574060,and 61574056) the Projects of Science and Technology Commission of Shanghai Municipality of China(Grant Nos.15JC1401800 and 14DZ2260800) the Program for Professor of Special Appointment(Eastern Scholar) Shanghai Rising-Star Program,China(Grant No.17QA1401400) the Fundamental Research Funds for the Central Universities of China
主 题:Raman MoS2 graphene 2D materials non-destructive characterization
摘 要:Two-dimensional (2D) materials have become a hot study topic in recent years due to their outstanding electronic, optical, and thermal properties. The unique band structures of strong in-plane chemical bonds and weak out-of-plane van der Waals (vdW) interactions make 2D materials promising for nanodevices and various other applications. Raman spectroscopy is a powerful and non-destructive characterization tool to study the properties of 2D materials. In this work, we review the research on the characterization of 2D materials with Raman spectroscopy. In addition, we discuss the application of the Raman spectroscopy technique to semiconductors, superconductivity, photoelectricity, and thermoelectricity.