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Robust n-type doping of WSe2 enabled by controllable proton irradiation

nano Research 2023年第1期16卷 1220-1227页

作者： Haidong Liang Yue Zheng Leyi Loh Zehua Hu Qijie Liang Cheng Han Michel Bosman Wei Chen Andrew A.Bettiol Centre for Ion Beam Applications(CIBA) Department of PhysicsNational University of SingaporeSingapore 117542Singapore International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education Institute of Microscale OptoelectronicsShenzhen UniversityShenzhen 518060China Department of Physics National University of SingaporeSingapore 117551Singapore Department of Materials Science and Engineering National University of SingaporeSingapore 117575Singapore Department of Chemistry National University of SingaporeSingapore 117543Singapore Division of Physics and Applied Physics School of Physical and Mathematical ScienceNanyang Technological UniversitySingapore 637371Singapore Songshan Lake Materials Laboratory Songshan Lake Mat LabDongguan 523808China national University of Singapore(Suzhou)Research Institute 377 Lin Quan StreetSuzhou Industrial ParkSuzhou 215123China

Two-dimensional(2D)transition metal dichalcogenides(TMDs)are considered to be promising building blocks for the next generation electronic and optoelectronic devices.Various doping schemes and work function engineering techniques have been explored to overcome the intrinsic performance limits of 2D TMDs.However,a reliable and long-time air stable doping scheme is still lacking in this field.In this work,we utilize keV ion beams of H2+to irradiate layered WSe2 crystals and obtain efficient n-type doping effect for all irradiated crystals within a fluence of 1×1014 protons·cm−2(1e14).Moreover,the irradiated WSe2 remains an n-type semiconductor even after it is exposed to ambient conditions for a year.Localized ion irradiation with a focused beam can directly pattern on the sample to make high performance homogenous p-n junction diodes.Raman and photoluminescence(PL)spectra demonstrate that the WSe2 crystal lattice stays intact after irradiation within 1e14.We attribute the reliable electrondoping to the significant increase in Se vacancies after the proton irradiation,which is confirmed by our scanning transmission electron microscope(STEM)results.Our work demonstrates a reliable and long-term air stable n-type doping scheme to realize high-performance electronic TMD devices,which is also suitable for further integration with other 2D devices.

关键词： WSe2 proton beam irradiation n-type doping long-time air stable Se vacancies

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Abnormal n-type doping effect in nitrogen-doped tungsten diselenide prepared by moderate ammonia plasma treatment

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nano Research 2018年第9期11卷 4923-4930页

作者： Zhepeng Jin Zhi Cai Xiaosong Chen Dacheng Wei State Key Laboratory of Molecular Engineering of Polymers Department of Macromolecular Science Fudan University Shanghai200433 China

To facilitate potential applications of tungsten diselenide （WSe2） in electronics, controllable doping is of great importance. As an industrially compatible technology, plasma treatment has been used to dope two-dimensional （2D） materials. However, owing to the strong etching effect in transition metal dichalcogenides （TMDCs）, it is difficult to controllably dope 2D WSe2 crystals by plasma. Herein, we develop a moderate ammonia plasma treatment method to prepare nitrogen-doped WSe2 with controlled nitrogen content. Interestingly, Raman, photoluminescence, X-ray photoelectron spectroscopy, and electrical Lts reveal abnormal n-doping behavior of nitrogen-doped WSe2, which is attributed to selenium anion vacancy introduced by hydrogen species in ammonia plasma. nitrogen-doped WSe2 with abnormal n-doping behavior has potential applications in future TMDCs-based electronics.

关键词： nitrogen-doped tungsten diselenide n-type doping ammonia plasma anion vacancy

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A Widely Applicable n-type Molecular doping for Enhanced Photovoltaic Performance of All-Polymer Solar Cells

A Widely Applicable n-Type Molecular Doping for Enhanced Pho...

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第五届新型太阳能电池学术研讨会

作者： Yalong Xu Jianyu Yuan Jianxia Sun Yannan Zhang Xufeng Ling Haihua Wu Guobing Zhang Junmei Chen Yongjie Wang Wanli Ma Soochow University

A widely applicable doping design for emerging nonfullerene solar cells would be an efficient strategy in order to further improve device performance.Herein, a family of n-dopants: tetrabutylammonium fluoride(TBAF), tetrabutylammonium chloride(TBACl),tetrabutylammonium bromide(TBABr), tetrabutylammonium iodide(TBAI), containing Lewis base anions are considered as efficient n-dopants for improving polymer-polymer solar cells(all-PSCs) performance.In all cases, slightly increased short-circuit current density(J) and significantly increased fill factor(FF) are observed, leading to a best PCE of 7.0 % for all-PSCs compared to that of 5.8 % in undoped devices.The improvement may be attributed to interaction between different anions X-(X=F, Cl, Br, I) in TBAX with the polymer acceptor.We reveal that adding TBAX at relatively low content does not alter active layer morphology, while it can reduce the work function(WF) of the electron acceptor.We find this simple solution-processed n-type molecular doping can efficiently suppress charge recombination in the bulk film and at the interface, resulting in improved FF and J.More importantly, our results allow exciting new insights into the role of molecular dopants in affecting the operation of current nonfullerene organic solar cells.

关键词： n-type doping all-polymer solar cells charge recombination tetrabutylammonium iodide（TBAI） morphology electron transfer

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A Cathodic Electrochromic Material Based on Thick Perylene Bisimide Film with High Optical Contrast and High Stability

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CCS Chemistry 2022年第4期4卷 1347-1356页

作者： Jianqiao Wang Weitao Ma Hailong Wang Zengqi Xie Huanhuan Zhang Yuguang Ma State Key Laboratory of Luminescent Materials and Devices Institute of Polymer Optoelectronic Materials and DevicesSouth China University of TechnologyTianhe DistrictGuangzhou 510640

Cathodic electrochromic materials realized by n-type doping of conducting polymers are scarce.Even with limited cases reported in the literature,long-term stability is an urgent problem to be solved.Herein,we report a high performance and stable cathodic electrochromic material,poly(Th-Cl-PBI),based on a perylene bisimide function core.Due to its high electropolymerization efficiency and low steric hindrance of thiophene groups,perylene bisimide,which generally does not dissolve and form film easily,can grow to the sufficient thickness of 350 nm for wide-range spectral modulation and large-capacity energy storage.The optical contrast of optimized film with a thickness of 240 nm reaches as high as 69.1% at 520 nm,94.1% at 760 nm,and 95.7% at 680 nm.Theoretical simulation based on the Lambert–Beer law also verifies this optical contrast dependent on film thickness.Besides,during the transition between the neutral state and radical anion state,it maintains 90.2% of the electrochemical activity after 4000 cycles,and the transmittance spectrum remains stable after 2000 cycles.The cation size effect on cathodic electrochromic process and cyclic stability has been investigated.

关键词： cathodic electrochromism perylene bisimide n-type doping film thickness optical contrast stability

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Structural and Electrical Properties of Sulfur-Doped Diamond Thin Films

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Plasma Science and Technology 2014年第3期16卷 255-259页

作者：王永杰尹增谦 College of Mathematics and Physics North China Electric Power University

We report our observations on the higher carrier mobility and higher conductivity of sulfur-doped n-type diamond thin films synthesized by the hot filament chemical vapor deposi- tion （HFCVD）. The structural and electrical characterizations of the films are measured by X-ray diffraction （XRD）, Raman spectroscopy, scanning electron microscope （SEM）, energy dispersion X-ray spectra （EDX）, and Hall effect measurements. It is found that the sulfur atoms are in- corporated into the polycrystalline diamond films. The n-type conductivity of the films increases with the H2S concentration, and a conductivity of the films as high as 1.82 ^-l.cm-1 is achieved. The results show that the sulfur atom plays an important role in the structural and electrical properties of sulfur-doped diamond thin films.

关键词： diamond film hot filament CVD n-type doping

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First-principles Study of Divalent ⅡA and Transition ⅡB Metals doping into Cu_2O

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Journal of Wuhan University of Technology(Materials Science) 2015年第3期30卷 458-462页

作者：朱家昆 LUO Minghai 黎明锴何云斌 Faculty of Materials Science & Engineering Hubei University Faculty of Physics and Electronic Technology Hubei University

Divalent IIA metals such as Be, Mg, Ca, Sr, Ba and transition IIB metals such as Zn, Cd were investigated as possible n-type dopants into the Cu2 O theoretically by using the first-principles calculations based on density functional theory. By systematical analyses of the lattice parameters, the bond length, the electronic structure, the local density of states and the defect formation energy for various doping systems, it is revealed that Ca, Sr, Ba and Be are more suited for n-type doping into Cu2O as shallow donors, compared to Mg which introduces a relatively deep donor level in Cu2O. Meanwhile, Zn and Cd can hardly be doped into Cu2O due to the positive formation energy of relevant defects.

关键词： Cu2O n-type doping divalent metals electronic structure defect formation

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Efficiency improvement of Sb2Se3 solar cells via grain boundary inversion

Efficiency improvement of Sb2Se3 solar cells via grain bound...

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第六届新型太阳能电池材料科学与技术学术研讨会

作者： Chao Chen Kanghua Li Jiang Tang Huazhong University of Science and Technology Wuhan National Laboratory for Optoelectronics

Exploring low-toxic and low-cost absorber materials for high-efficient solar cells has received wide attention in photovoltaic field. SbSe is a promising photovoltaic material with earth-abundant, low-toxic and low-cost constituents. Recent researches revealed that recombination losses in the absorber layer limited the efficiency of SbSe solar cells. In this abstract, we demonstrated a strategy of grain boundary(GB) inversion to alleviate such recombination loss. Owning to its 1D crystal structure, we successfully inverted the GBs of SbSe films by introducing n-type Cu interstitial doping at GBs via a low-temperature CuCl treatment. A built-in electric field is established between p-type grain interiors(GIs) and n-type GBs, which spatially separates photo-generated electrons and holes, suppresses recombination loss and enhances carrier collection efficiency. In the end, we obtained an efficiency of 7.04%, which is the highest efficiency of SbSe solar cells based on rapid thermal evaporation technology.

关键词： Sb2Se3 solar cell grain boundary inversion n-type doping

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