Abnormal n-type doping effect in nitrogen-doped tungsten diselenide prepared by moderate ammonia plasma treatment
Abnormal n-type doping effect in nitrogen-doped tungsten diselenide prepared by moderate ammonia plasma treatment作者机构：State Key Laboratory of Molecular Engineering of Polymers Department of Macromolecular Science Fudan University Shanghai200433 China
出 版 物：《Nano Research》 (纳米研究（英文版）)
年 卷 期：2018年第11卷第9期
页 面：4923-4930页
核心收录：
学科分类：07[理学] 0701[理学-数学] 070101[理学-基础数学]
基 金：supported by National Program for Thousand Young Talents of China 国家自然科学基金 Shanghai Committee of Science and Technology in China Fudan University
主 题：nitrogen-doped tungsten diselenide n-type doping ammonia plasma anion vacancy
摘 要：To facilitate potential applications of tungsten diselenide （WSe2） in electronics, controllable doping is of great importance. As an industrially compatible technology, plasma treatment has been used to dope two-dimensional （2D） materials. However, owing to the strong etching effect in transition metal dichalcogenides （TMDCs）, it is difficult to controllably dope 2D WSe2 crystals by plasma. Herein, we develop a moderate ammonia plasma treatment method to prepare nitrogen-doped WSe2 with controlled nitrogen content. Interestingly, Raman, photoluminescence, X-ray photoelectron spectroscopy, and electrical Lts reveal abnormal n-doping behavior of nitrogen-doped WSe2, which is attributed to selenium anion vacancy introduced by hydrogen species in ammonia plasma. Nitrogen-doped WSe2 with abnormal n-doping behavior has potential applications in future TMDCs-based electronics.
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