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Identification of subsurface damage of 4H-SiC wafers by combining photo-chemical etching and molten-alkali etching

Journal of Semiconductors 2022年第10期43卷 73-78页

作者： Wenhao Geng Guang Yang Xuqing Zhang Xi Zhang Yazhe Wang Lihui Song Penglei Chen Yiqiang Zhang Xiaodong Pi Deren Yang Rong Wang State Key Laboratory of Silicon Materials&School of Materials Science and Engineering Zhejiang UniversityHangzhou 310027China Institute of Advanced Semiconductors&Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices Hangzhou Innovation CenterZhejiang UniversityHangzhou 311200China Key Laboratory of Optical Field Manipulation of Zhejiang Province Department of PhysicsZhejiang Sci-Tech UniversityHangzhou 310018China School of Materials Science and Engineering&College of Chemistry Zhengzhou UniversityZhengzhou 450001China

In this work,we propose to reveal the subsurface damage(SSD)of 4H-SiC wafers by photo-chemical etching and identify the nature of SSD by molten-alkali *** UV illumination,SSD acts as a photoluminescence-black *** selective photo-chemical etching reveals SSD as the ridge-like *** is found that the ridge-like SSD is still crystalline 4H-SiC with lattice *** molten-KOH etching of the 4H-SiC wafer with ridge-like SSD transforms the ridge-like SSD into groove lines,which are typical features of *** means that the underlying scratches under mechanical stress give rise to the formation of SSD in 4H-SiC *** is incorporated into 4H-SiC wafers during the lapping,rather than the chemical mechanical polishing(CMP).

关键词： 4H-SiC subsurface damages photo-chemical etching molten-alkali etching

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Discrimination of dislocations in 4H-SiC by inclination angles of molten-alkali etched pits

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Journal of Semiconductors 2022年第12期43卷 72-78页

作者： Guang Yang Hao Luo Jiajun Li Qinqin Shao Yazhe Wang Ruzhong Zhu Xi Zhang Lihui Song Yiqiang Zhang Lingbo Xu Can Cui Xiaodong Pi Deren Yang Rong Wang Key Laboratory of Optical Field Manipulation of Zhejiang Province Department of PhysicsZhejiang Sci-Tech UniversityHangzhou 310018China State Key Laboratory of Silicon Materials and School of Materials Science and Engineering Zhejiang UniversityHangzhou 310027China Hangzhou Innovation Center Zhejiang UniversityHangzhou 311200China School of Materials Science and Engineering&Henan Institute of Advanced Technology Zhengzhou UniversityZhengzhou 450001China

Discrimination of dislocations is critical to the statistics of dislocation densities in 4H silicon carbide(4H-SiC),which are routinely used to evaluate the quality of 4H-SiC single crystals and homoepitaxial *** this work,we show that the inclination angles of the etch pits of molten-alkali etched 4H-SiC can be adopted to discriminate threading screw dislocations(TSDs),threading edge dislocations(TEDs)and basal plane dislocations(BPDs)in *** n-type 4H-SiC,the inclination angles of the etch pits of TSDs,TEDs and BPDs in molten-alkali etched 4H-SiC are in the ranges of 27°−35°,8°−15°and 2°−4°,*** semi-insulating 4H-SiC,the inclination angles of the etch pits of TSDs and TEDs are in the ranges of 31°−34°and 21°−24°,*** inclination angles of dislocation-related etch pits are independent of the etching duration,which facilitates the discrimination and statistic of dislocations in *** significantly,the inclination angle of a threading mixed dislocations(TMDs)is found to consist of characteristic angles of both TEDs and *** enables to distinguish TMDs from TSDs in 4H-SiC.

关键词： 4H-SiC single crystals dislocations molten-alkali etching

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