Discrimination of dislocations in 4H-SiC by inclination angles of molten-alkali etched pits

作     者：Guang Yang Hao Luo Jiajun Li Qinqin Shao Yazhe Wang Ruzhong Zhu Xi Zhang Lihui Song Yiqiang Zhang Lingbo Xu Can Cui Xiaodong Pi Deren Yang Rong Wang Guang Yang;Hao Luo;Jiajun Li;Qinqin Shao;Yazhe Wang;Ruzhong Zhu;Xi Zhang;Lihui Song;Yiqiang Zhang;Lingbo Xu;Can Cui;Xiaodong Pi;Deren Yang;Rong Wang

作者机构：Key Laboratory of Optical Field Manipulation of Zhejiang ProvinceDepartment of PhysicsZhejiang Sci-Tech UniversityHangzhou 310018China State Key Laboratory of Silicon Materials and School of Materials Science and EngineeringZhejiang UniversityHangzhou 310027China Hangzhou Innovation CenterZhejiang UniversityHangzhou 311200China School of Materials Science and Engineering&Henan Institute of Advanced TechnologyZhengzhou UniversityZhengzhou 450001China 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2022年第43卷第12期

页      面：72-78页

核心收录：

学科分类：081702[工学-化学工艺] 0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0817[工学-化学工程与技术] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0702[理学-物理学] 

基　　金：supported by“Pioneer”and“Leading Goose”R&D Program of Zhejiang(Grant No.2022C01021) National Key Research and Development Program of China(Grant Nos.2018YFB2200101) Natural Science Foundation of China(Grant Nos.61774133) Fundamental Research Funds for the Central Universities(Grant No.2018XZZX003-02) Natural Science Foundation of China for Innovative Research Groups(Grant No.61721005) Zhejiang University Education Foundation Global Partnership Fund 

主　　题：4H-SiC single crystals dislocations molten-alkali etching 

摘      要：Discrimination of dislocations is critical to the statistics of dislocation densities in 4H silicon carbide(4H-SiC),which are routinely used to evaluate the quality of 4H-SiC single crystals and homoepitaxial *** this work,we show that the inclination angles of the etch pits of molten-alkali etched 4H-SiC can be adopted to discriminate threading screw dislocations(TSDs),threading edge dislocations(TEDs)and basal plane dislocations(BPDs)in *** n-type 4H-SiC,the inclination angles of the etch pits of TSDs,TEDs and BPDs in molten-alkali etched 4H-SiC are in the ranges of 27°−35°,8°−15°and 2°−4°,*** semi-insulating 4H-SiC,the inclination angles of the etch pits of TSDs and TEDs are in the ranges of 31°−34°and 21°−24°,*** inclination angles of dislocation-related etch pits are independent of the etching duration,which facilitates the discrimination and statistic of dislocations in *** significantly,the inclination angle of a threading mixed dislocations(TMDs)is found to consist of characteristic angles of both TEDs and *** enables to distinguish TMDs from TSDs in 4H-SiC.