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2D layered black arsenic-phosphorus materials:Synthesis,properties,and device applications

Nano Research 2022年第4期15卷 3737-3752页

作者： Junchuan Liang Yi Hu Kaiqiang Zhang Yaoda Wang Xinmei Song Anyang Tao Yuzhu Liu Zhong Jin MOE Key Laboratory of Mesoscopic Chemistry MOE Key Laboratory of High Performance Polymer Materials and TechnologyJiangsu Key Laboratory of Advanced Organic MaterialsSchool of Chemistry and Chemical EngineeringNanjing UniversityNanjing 210023China Shenzhen Research Institute of Nanjing University Shenzhen 518063China

Phosphorene,especially black phosphorus(BP),has attracted considerable attention due to the unique characteristics,such as tunable direct bandgap,high carrier mobility,and strong in-plane ***,a new modification strategy for black phosphorus has been developed by alloying black phosphorus with the congener element *** elemental composition tuning of black phosphorus with arsenic can not only maintain its special crystal structure and high anisotropy but also modify its electrical and optical properties for the further applications of multifunctional *** achieved two-dimensional(2D)black arsenic-phosphorus materials exhibit outstanding optical,electrical,and photoelectric properties,such as very narrow band gap,anisotropic infrared absorption,and bipolar transfer characteristics,presenting great potential in infrared photodetectors and highperformance field effect transistors(FETs).In this review,we introduce the recent progress made in the synthesis and applications of black arsenic-phosphorus,and provide an outlook and perspectives on the current challenges and future opportunities in this *** hope that this review can bring new insights and inspirations on the further development of 2D black arsenic-phosphorus based materials and devices.

关键词： black arsenic-phosphorus two-dimensional(2D)materials black phosphorus field effect transistors mid-infrared photodetectors

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Graphene plasmonic nanoresonators/graphene heterostructures for efficient room-temperature infrared photodetection

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Journal of Semiconductors 2020年第7期41卷 54-60页

作者： Tian Sun Weiliang Ma Donghua Liu Xiaozhi Bao Babar Shabbir Jian Yuan Shaojuan Li Dacheng Wei Qiaoliang Bao Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information Huazhong University of Science and TechnologyWuhan 430074China State Key Laboratory of Molecular Engineering of Polymers Department of Macromolecular ScienceFudan UniversityShanghai 200433China Joint Key Laboratory of the Ministry of Education Institute of Applied Physics and Materials Engineering(IAPME)University of MacaoMacaoChina School of Physics and Electronic Information Huaibei Normal UniversityHuaibei 235000China State Key Laboratory of Applied Optics Changchun Institute of Optics Fine Mechanics and PhysicsChinese Academy of SciencesChangchun 130033China Department of Materials Science and Engineering and ARC Centre of Excellence in Future Low-Energy Electronics Technologies(FLEET)Monash UniversityClaytonVictoria 3800Australia

High-performance infrared(IR)photodetectors made by low dimensional materials promise a wide range of applications in communication,security and ***,light-harvesting effects based on novel plasmonic materials and their combinations with two-dimensional(2 D)materials have raised tremendous interest in recent years,as they may potentially help the device complement or surpass currently commercialized IR *** is a particularly attractive plasmonic material because graphene plasmons are electrically tunable with a high degree of electromagnetic confinement in the mid-infrared(mid-IR)to terahertz regime and the field concentration can be further enhanced by forming ***,we report an efficient mid-IR room-temperature photodetector enhanced by plasmonic effect in graphene nanoresonators(GNRs)/graphene *** plasmon polaritons in GNRs are size-dependent with strong field *** that the size and density of GNRs are controllable by chemical vapor deposition method,our work opens a cost-effective and scalable pathway to fabricate efficient IR optoelectronic devices with wavelength tunability.

关键词： graphene plasmons nanoresonators s-SNOM mid-infrared photodetectors

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